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    Toshiba America Electronic Components TPCA8102(TE12L,Q,M

    MOSFET P-CH 30V 40A 8SOP
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    Toshiba America Electronic Components TPCA8102(TE12.Q)

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    Quest Components TPCA8102(TE12.Q) 4,720
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    TPCA8102 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TPCA8102 Toshiba Silicon N Channel MOS Type (Ultra High speed U-MOSIII) Original PDF
    TPCA8102 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPCA8102 Toshiba Pch Power MOSFET; Surface Mount Type: Y; Package: SOP Advance; Application Scope: mobile; R DS On (max 0.014) (max 0.006); I_S (A): (max -40) Original PDF
    TPCA8102(TE12L,Q,M Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 40A SOP-8 ADV Original PDF

    TPCA8102 Datasheets Context Search

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    tpca8102

    Abstract: No abstract text available
    Text: TPCA8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅢ TPCA8102 Lithium Ion Battery Applications Notebook PC Applications 0.5±0.1 Unit: mm Low drain-source ON resistance: RDS (ON) = 4.5mΩ (typ.) High forward transfer admittance: |Yfs| = 60S (typ.)


    Original     		PDF TPCA8102 tpca8102

    TPCA8102

    Abstract: No abstract text available
    Text: TPCA8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅢ TPCA8102 Lithium Ion Battery Applications Notebook PC Applications 0.5±0.1 Unit: mm Low drain-source ON resistance: RDS (ON) = 4.5mΩ (typ.) High forward transfer admittance: |Yfs| = 60S (typ.)


    Original     		PDF TPCA8102 TPCA8102

    TPCA8102

    Abstract: No abstract text available
    Text: TPCA8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅢ TPCA8102 Lithium Ion Battery Applications Notebook PC Applications 0.5±0.1 Unit: mm 0.4±0.1 0.05 M A 5 Low drain-source ON resistance: RDS (ON) = 4.5mΩ (typ.) High forward transfer admittance: |Yfs| = 60S (typ.)


    Original     		PDF TPCA8102 TPCA8102

    TPCA8102

    Abstract: No abstract text available
    Text: TPCA8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅢ TPCA8102 Lithium Ion Battery Applications Notebook PC Applications 0.5±0.1 Unit: mm Low drain-source ON resistance: RDS (ON) = 4.5mΩ (typ.) • High forward transfer admittance: |Yfs| = 60S (typ.)


    Original     		PDF TPCA8102 TPCA8102

    Untitled

    Abstract: No abstract text available
    Text: TPCA8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅢ TPCA8102 Lithium Ion Battery Applications Notebook PC Applications 0.5±0.1 Unit: mm Low drain-source ON resistance: RDS (ON) = 4.5mΩ (typ.) High forward transfer admittance: |Yfs| = 60S (typ.)


    Original     		PDF TPCA8102

    TPCA8102

    Abstract: No abstract text available
    Text: TPCA8102 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII TPCA8102 ○ リチウムイオン 2 次電池用 ○ ノートブック PC 用 ○ 携帯電子機器用 小型薄型で実装面積が小さい。 • スイッチングスピードが速い。


    Original     		PDF TPCA8102 TPCA8102

    TPCA8102

    Abstract: No abstract text available
    Text: TPCA8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅢ TPCA8102 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 4.5mΩ (typ.) • High forward transfer admittance: |Yfs| = 60S (typ.)


    Original     		PDF TPCA8102 TPCA8102

    TPCA8102

    Abstract: No abstract text available
    Text: TPCA8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅢ TPCA8102 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 4.5mΩ (typ.) • High forward transfer admittance: |Yfs| = 60S (typ.)


    Original     		PDF TPCA8102 TPCA8102

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    b 1237

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04–27279–2E ASSP For Power Management Applications Rechargeable Battery Synchronous Rectification DC/DC Converter IC for Charging Li-ion Battery MB39A132A • DESCRIPTION MB39A132A, which is used for charging Li-ion battery, is a synchronous rectification DC/DC converter IC


    Original     		PDF MB39A132A MB39A132A, MB39A132A b 1237

    IC TSSOP-24 ASSP for Power Management Applications

    Abstract: MARKING SMD transistor R44
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27264-4E ASSP for Power Management Applications Rechargeable Battery DC/DC converter IC for Charging Li-ion battery MB39A134 • DESCRIPTION The MB39A134 is a DC/DC converter IC for charging Li-ion battery, which is suitable for down conversion,


    Original     		PDF DS04-27264-4E MB39A134 MB39A134 IC TSSOP-24 ASSP for Power Management Applications MARKING SMD transistor R44

    MB39A134

    Abstract: NEC 65010 RR0816P103D MB39A134PFT MB39A134EVB-01 DTC144EET1G IL028 RR0816P103-D UPA2714GR TPCA8102
    Text: FUJITSU MICROELECTRONICS 数据手册 DS04–27264–2Z ASSP 电源用 充电电池用 锂离子电池充电用 DC/DC 转换器 IC MB39A134 • 概要 MB39A134 是一款用于锂离子电池充电的脉宽调制方式 (PWM) DC/DC 转换器 IC。该芯片可分别控制充电电压和充电电


    Original     		PDF MB39A134 TSSOP-24 MB39A134 NEC 65010 RR0816P103D MB39A134PFT MB39A134EVB-01 DTC144EET1G IL028 RR0816P103-D UPA2714GR TPCA8102

    toshiba notebook schematic diagram free

    Abstract: smd code marking fujitsu capacitor MB39A134 DS04-27264-2E marking code smd fujitsu MB39A134PFT MB39A134EVB-01 smd code marking NEC tantalum capacitor C1608JB1H224K marking code smd semiconductor fujitsu
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-27264-2E ASSP for Power Management Applications Rechargeable Battery DC/DC converter IC for Charging Li-ion battery MB39A134 • DESCRIPTION The MB39A134 is a DC/DC converter IC for charging Li-ion battery, which is suitable for down conversion, and


    Original     		PDF DS04-27264-2E MB39A134 MB39A134 toshiba notebook schematic diagram free smd code marking fujitsu capacitor DS04-27264-2E marking code smd fujitsu MB39A134PFT MB39A134EVB-01 smd code marking NEC tantalum capacitor C1608JB1H224K marking code smd semiconductor fujitsu

    tpc8118

    Abstract: SVI 2004 A toshiba f5d tpc8026 tpc8109 oks2c toshiba f5b TPC8028 MARKING TPC8107 SOP8 MOSFET MARKING STP
    Text: Power MOSFETs 低耐圧低Ronシリーズ 2007年 2月 Copyright 2007, Toshiba Corporation. 低Ron 低耐圧U-MOSの技術トレンド 30 2 Ron*A (mOhm*mm ) 25 20 15 10 Pch Nch 5 Pch IV Nch III Pch V Nch IV Pch VI Nch V or VI 2007年 2月 2 リチウムイオン電池保護回路用MOSFETトレンドマップ


    Original     		PDF TPCM8001-H TPCM8003-H TPCM8002-H 2Q/2007 TPCM8102 1Q/2007 tpc8118 SVI 2004 A toshiba f5d tpc8026 tpc8109 oks2c toshiba f5b TPC8028 MARKING TPC8107 SOP8 MOSFET MARKING STP

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    MB39A132

    Abstract: mb39a132 equivalent
    Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


    Original     		PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04–27265–6E ASSP For Power Management Applications Rechargeable Battery Synchronous Rectification DC/DC Converter IC for Charging Li-ion Battery MB39A132 • DESCRIPTION MB39A132, which is used for charging Li-ion battery, is a synchronous rectification DC/DC converter IC


    Original     		PDF MB39A132 MB39A132, MB39A132

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    2 input nand gate 24v

    Abstract: TPCA8103 ARM10 ARM1026EJ TPCA8101 TPCA8102 2 input nor gate 24v
    Text: VOLUME 135 東芝半導体情報誌アイ 2003年10月号 CONTENTS 10 INFORMATION •エム・システムズ社と データストレージ製品で包括提携 .P2 ■高性能マイクロプロセッサ・コア 「ARM1026EJ-S」のライセンスを取得 .P2


    Original     		PDF ARM1026EJ-S 03-3457-3405FAX. ARM1026EJ-S ARM10 2 input nand gate 24v TPCA8103 ARM10 ARM1026EJ TPCA8101 TPCA8102 2 input nor gate 24v

    MB39A132

    Abstract: b 1237 mb39a132 equivalent
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS04–27265–2E ASSP For Power Management Applications Rechargeable Battery Synchronous Rectification DC/DC Converter IC for Charging Li-ion Battery MB39A132 • DESCRIPTION MB39A132, which is used for charging Li-ion battery, is a synchronous rectification DC/DC converter IC


    Original     		PDF MB39A132 MB39A132, MB39A132 b 1237 mb39a132 equivalent

    MB39A132

    Abstract: ic MB39A132 C3216JB1E106K MB39A132 QFN 32 DTC144EET1G C3206 mb39a132evb UPA2755 BAT54HT1 CDRH104RNP-100NC
    Text: FUJITSU MICROELECTRONICS 数据手册 ASSP DS04–27265–2Z 电源用 充电电池用 锂离子电池充电用同步整流 DC/DC 转换器 IC MB39A132 • 概要 是一款用于锂离子电池充电的脉宽调制方式 (PWM) 同步整流 DC/DC 转换器 IC。该芯片可分别控制充电电压


    Original     		PDF QFN-32 MB39A132 MB39A132 ic MB39A132 C3216JB1E106K MB39A132 QFN 32 DTC144EET1G C3206 mb39a132evb UPA2755 BAT54HT1 CDRH104RNP-100NC