Untitled
Abstract: No abstract text available
Text: SB30-100MSMD SB30-100ASMD SB30-100RSMD MECHANICAL DATA Dimensions in mm 4 .1 4 0 .1 6 3 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M a x . DUAL SCHOTTKY BARRIER DIODE IN FOR HI–REL APPLICATIONS 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 )
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SB30-100MSMD
SB30-100ASMD
SB30-100RSMD
O-276AB)
SB30-100M
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XTR2N0800
Abstract: No abstract text available
Text: XTRM Series XTR2N0800 IE W HIGH-TEMPERATURE, 80V N-CHANNEL POWER MOSFET FAMILY DESCRIPTION ▲ Minimum BVDSS = 100V. ▲ Allowed VGS range –5.5V to +5.5V. ▲ Operational beyond the -60°C to +230°C temperature range. ▲ Low RDS on o XTR2N0825: 1.8 Ω @ 230°C
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XTR2N0800
XTR2N0825:
XTR2N0850:
80nsec
95nsec
XTR2N0800
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SB30-45SSMD
Abstract: SB3045S
Text: SB30-45SSMD MECHANICAL DATA Dimensions in mm 4 .1 4 0 .1 6 3 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 )
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SB30-45SSMD
O-276AB)
SB30-45SSMD
SB3045S
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lm1083
Abstract: 5962-8777601XX 7703407XA IP137MAHVSMD05 5962-8767502UA 5962-8855301ux 7703401ua IP140ME-15 FM362 IP7905AG
Text: Hi Rel Linear Guide Linear voltage regulators for high reliability applications Linear Regulator Contents Positive Fixed Voltage 2-4 Negative Fixed Voltage 5-7 Positive Adjustable Voltage Linear Regulator 8-9 Negative Adjustable Voltage Linear Regulator 9
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IP117
FM36235
M/0103/CECC/UK
1360/M
VQC-03-003050
VQC-03-003049
U3158
2M8S02
B2009
lm1083
5962-8777601XX
7703407XA
IP137MAHVSMD05
5962-8767502UA
5962-8855301ux
7703401ua
IP140ME-15
FM362
IP7905AG
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SB30-45ASMD
Abstract: SB30-45M SB30-45MSMD SB30-45RSMD
Text: SB30-45MSMD SB30-45ASMD SB30-45RSMD MECHANICAL DATA Dimensions in mm 4 .1 4 0 .1 6 3 3 .8 4 (0 .1 5 1 ) DUAL SCHOTTKY BARRIER DIODE IN CERAMIC SURFACE MOUNT PACKAGE FOR HI–REL APPLICATIONS 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 )
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SB30-45MSMD
SB30-45ASMD
SB30-45RSMD
SB30-45ASMD
SB30-45M
SB30-45MSMD
SB30-45RSMD
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BUL52BSMD
Abstract: No abstract text available
Text: BUL52BSMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed
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BUL52BSMD
O276AB)
15-Aug-02
BUL52BSMD
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BDS28BSMD
Abstract: No abstract text available
Text: BDS28BSMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar PNP Device in a Hermetically sealed
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BDS28BSMD
O276AB)
15-Aug-02
BDS28BSMD
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BUL54BSMD
Abstract: No abstract text available
Text: BUL54BSMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed
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BUL54BSMD
O276AB)
15-Aug-02
BUL54BSMD
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BUL56ASMD
Abstract: No abstract text available
Text: BUL56ASMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed
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BUL56ASMD
O276AB)
15-Aug-02
BUL56ASMD
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2N4911XSMD
Abstract: No abstract text available
Text: 2N4911XSMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed
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2N4911XSMD
O276AB)
15-Aug-02
2N4911XSMD
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2N4912XSMD
Abstract: No abstract text available
Text: 2N4912XSMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed
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2N4912XSMD
O276AB)
15-Aug-02
2N4912XSMD
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BSV64SMD
Abstract: No abstract text available
Text: BSV64SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed
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BSV64SMD
O276AB)
15-Aug-02
BSV64SMD
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BUX78SMD
Abstract: No abstract text available
Text: BUX78SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar PNP Device in a Hermetically sealed
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BUX78SMD
O276AB)
15-Aug-02
BUX78SMD
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2N5154SMD
Abstract: No abstract text available
Text: 2N5154SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed
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2N5154SMD
O276AB)
15-Aug-02
2N5154SMD
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TO-276
Abstract: IRF250SMD IRFN250 TO276AB
Text: IRFN250 2N7225U1 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
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IRFN250
2N7225U1
300ms,
TO-276
IRF250SMD
IRFN250
TO276AB
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100V 20A Schottky Common Anode Diode
Abstract: No abstract text available
Text: SML11GB15U2C MECHANICAL DATA Dimensions in mm inches 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9 (0 .0 3 5 ) m in .
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SML11GB15U2C
O-276AB)
100V 20A Schottky Common Anode Diode
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BDS29BSMD
Abstract: No abstract text available
Text: BDS29BSMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed
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BDS29BSMD
O276AB)
15-Aug-02
BDS29BSMD
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2N3421SMD
Abstract: No abstract text available
Text: 2N3421SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed
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2N3421SMD
O276AB)
15-Aug-02
2N3421SMD
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BUX47SMD
Abstract: No abstract text available
Text: BUX47SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed
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BUX47SMD
O276AB)
15-Aug-02
BUX47SMD
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BDS28CSMD
Abstract: No abstract text available
Text: BDS28CSMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar PNP Device in a Hermetically sealed
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BDS28CSMD
O276AB)
15-Aug-02
BDS28CSMD
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2N3792SMD
Abstract: No abstract text available
Text: 2N3792SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar PNP Device in a Hermetically sealed
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2N3792SMD
O276AB)
15-Aug-02
2N3792SMD
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SML10SIC06SMD
Abstract: LE17 silicon carbide SML10SIC06SM
Text: SILICON CARBIDE SiC SCHOTTKY DIODE SML10SIC06SMD • Hermetic Ceramic Surface Mount Package. • Semelab’s Silicon Carbide (SiC) Schottky diodes exhibit low forward voltage and superb high temperature performance. • Suitable for high-frequency hard switching applications,
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SML10SIC06SMD
25MHz
O-276AB)
SML10SIC06SMD
LE17
silicon carbide
SML10SIC06SM
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BDS19SMD
Abstract: LE17 TO-276AB
Text: SILICON PLANAR EPITAXIAL PNP TRANSISTOR BDS19SMD • High Voltage • Hermetic Ceramic Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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BDS19SMD
-150V
O-276AB)
BDS19SMD
LE17
TO-276AB
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Untitled
Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL PNP TRANSISTOR BDS18SMD • High Voltage • Hermetic Ceramic Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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BDS18SMD
-120V
O-276AB)
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