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    PHP18NQ10T

    Abstract: PHB27NQ10T BYC05B-600 PHB23NQ10T pbyr1045 BYV72EW200 Msd119 BYC08B-600 byv26 equivalent bridge rectifier 8341
    Text: Philips Semiconductors Power in Switched Mode Power Supplies SOT 428 DPAK SOT 404 SOT 223 SOT 429 D 2-PAK 1999 TO247 M3D306 TO220AB SOD 59 TO220AC SOT 186A SOD 113 ISOLATED TO22OAB 2-PIN SOT 186A Philips Semiconductors Ð a worldwide company Argentina: see South America


    Original     		PDF M3D306 O220AB O220AC O22OAB 30EX-150 BYQ30EX-200 BYV32EX-150 BYV42EX-150 BYV32EX-200 BYV42EX-200 PHP18NQ10T PHB27NQ10T BYC05B-600 PHB23NQ10T pbyr1045 BYV72EW200 Msd119 BYC08B-600 byv26 equivalent bridge rectifier 8341

    diode cross reference

    Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
    Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: [email protected] DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS


    Original     		PDF

    SK12100C

    Abstract: SK1240C 1270C
    Text: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-1200-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-22OAB PACKAGE Low switching noise FULLY INSULATED PACKAGE A


    Original     		PDF SBDT-1200-1B O-22OAB SK1240C O-220 SK1240C-1250C SK1260C-1270C SK12100C 97bsbdt12 SK12100C SK1240C 1270C

    Q400414

    Abstract: 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M
    Text: LORAS INDUSTRIES ITrms Amps PART No. INC 42E VDRM IDRM Volts mAmps PACKAGE Q1 D 5500440 TRIAC IGT Q2 Q3 mAmps DOOOODt. T IL O R A “T - 2 5 ' O Î VGT Volts Q4 Ih mAmps ITM Amps VTM Volts 0.6 Amps ITrms TO-92 Package MAC974 MAC976 0.6 0.6 MA0&7fr " : MAC97A3 "•


    OCR Scan     		PDF -T-25-0Ã MAC974 MAC976 MAC97AÂ MAC97A6 MAC97A8 SC92B T0218AC BTB41200B Q400414 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M

    bd639

    Abstract: bd640 BF467 B0239C B0544 bd639 npn B0250C BD546D BD243 b0546
    Text: Plastic Power Transistors 1? 2-6A Up to 65W oc Device Type B0239 BD239A B D 239B B D 239C BD240 BD240A BD240B BD240C BD241 BD241A B 0241 B BD241C BD242 BD242A BD242B BD242C BD243 BD243A BD243B BD243C BD244 BD244A BD244B B D 244C > o Ul o > > 'c u V V V A Ul


    OCR Scan     		PDF O-22OAB 0-25A B0239 BD239A BD239B B0239C BD240 BD240A BD240B BD240C bd639 bd640 BF467 B0544 bd639 npn B0250C BD546D BD243 b0546

    TO-22OAB

    Abstract: SD57a irf520n to22oab
    Text: PD-91339A International l ö R Rectifier IRF520N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100 V R D S o n = 0 . 2 0 Î 2 lD = 9.7A


    OCR Scan     		PDF

    10N120BN

    Abstract: No abstract text available
    Text: HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Semiconductor Data Sheet January 1999 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high


    OCR Scan     		PDF HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS O-263AB 10N120BN, 10N120BN

    2SD1087

    Abstract: 2SD1094 2SD1067 2SD1066 2SD1071 "SCA 62" 2SD1063 2SD1064 2SD1065 2SD1069
    Text: - 234 - æXËtë M S ŒJ f± U=2bX¡, *W(ilc=2bV '4v n n # m tt (Ta=25‘ C) [*EPtttyp0] Pe* (max) (V) (A) (V) <W) (ÏÏ) VcB (V) (/¿A) (min) (max) VCE (V) (max) (V) Ic / I e (A) Ic (A) (V) Ib (A) 2SD1063 PSW 60 50 7 60 100 40 70 280 2 1 0.4 4 2SD1064 PSI


    OCR Scan     		PDF 2SD1063 2SD1064 2SD1065 2SD1066 2SD1067 2SD1069 2SD1070 2SD1071 2SD1094 2SB831 2SD1087 2SD1094 2SD1066 "SCA 62" 2SD1063 2SD1064 2SD1069

    2SB737

    Abstract: 2SD786 EL 14v 4c 2SD758B 2SB733 2SD756 2SD758 2SD772 2SD786S 2sd797
    Text: - 224 - Ta=25'C, *EP(iTc=25‘ C m £ tt & m ä VCBO Vc e o (V) (V) n lc(DC) Pc Pc* Ic b o (A) <W) (W) (Uh) Vro (V) n & 14 hF E (min) (roax) (Ta=25‘ C) Ir/Ir (Aj“ Vp f (V) [*E P (ity p fif] (max) '(V )' Ic CA) Ib (A) 2SD743 H i LF PA/LS PSW 100 80 4


    OCR Scan     		PDF 2SD743 2SD743A 2SD755 2SD756 2SD756A 2SD757 150mV 2SB737 2SD786S 2SB738 2SB737 2SD786 EL 14v 4c 2SD758B 2SB733 2SD758 2SD772 2SD786S 2sd797

    PA8080

    Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
    Text: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)


    OCR Scan     		PDF 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1259A 2SB937 2SD1260 PA8080 2SD1246 2SD1247 2SD1250A 2SD1251

    2SC3213

    Abstract: 2SC3170 2SC3159 MP40 2sc3153 2sc3180n 2sc3211 2SC3157 2SA1263N 2SC3175
    Text: - 148 - Ält iàü Jfcfcæfë Ta=25‘ C,*EDtàTc=25,C -6 •V-L /V rrj /ü ; Vc e o (V) 2SC3143 2SC3144 HV SW/LF A =i* 2SC3145 (V) . Pc Pc* (A) (W) (W) 0. 08 n m •C(DC) ICBO (max) ink) VcB (V) 0. 1 0.2 120 (min) hF E 60 180 160 HS Stf/D 70 60 3 1.75


    OCR Scan     		PDF 2SC3143 2SC3144 2SC3145 2SC3147 175MHz 2SC3148 2SC3149 2SC3150 2SA1262 2SC3179 2SC3213 2SC3170 2SC3159 MP40 2sc3153 2sc3180n 2sc3211 2SC3157 2SA1263N 2SC3175

    2SB897

    Abstract: 2SD115 2SB863 2SB889 2sb891 2sd1148 2SD1207 2SB855 2SB859 2SB860
    Text: - 64 - m % Ta=25cC . * E P ( ä T c = 2 5 eC m & 2SB859 2SB860 2SB861 ÍL BÍL BÍL H & VcBO Vc e o ICCDC) Pc Pc* (V) (V) (A) (W) (W) LF PA -100 -80 -A LF PA/TV Vont -100 -100 -4 1.8 1.8 Ic b o (max) ink) 40 -100 V’ CB (V) -80 40 , hp (min) (max) te te


    OCR Scan     		PDF 2SB859 2SB860 2SB861 2SB862 2SB863 2SB855 2SB867 -1320ABJÃ 2SB886 2SB887 2SB897 2SD115 2SB863 2SB889 2sb891 2sd1148 2SD1207 2SB855

    2SA798

    Abstract: 2SA733 2SA785 2SA778AK 2sc1567 2SA800 2SC1398 2SA720A 2SA798 g 2SA743
    Text: 14 - m % T a = 2 5 cC , * E P Í Í T c = 2 5 ‘ ü m 2SA719 & tt fóT 2SA720 2SA720A fâT 2SA732 m M £ & VcBO VcEO (V) (V) Ici D C) Pc Pc* (W) (W) \M ld A / (A) 340 -10 -0.15 -0.6 -1. 5 -0.3 -0.03 85 340 -10 -0.15 -0.6 -1. 5 -0.3 -0.03 -10 40 200 -10


    OCR Scan     		PDF 2sa719 2SA720A 2SA732 2SA733 2SA733 2SA806 2SC1622A 2SA811A 2SC1623 SC-59) 2SA798 2SA785 2SA778AK 2sc1567 2SA800 2SC1398 2SA798 g 2SA743

    2SC2291

    Abstract: 2SC2320 2SC2338 2SC2285A-MA 2SA1010 2SC2289 2SC2318 2SC2329 2SC2286-KA 2SC2287-KA
    Text: - 120 - m % Ta=25'C, *EP(iTc=25<C m % f t & m & VcBO Vc e o (V) (V) 1c ( d c ) (A) Pc Pc* (W) m i CBC\ vm 3x j? VcB (V) (Uk) , hF E (min) ft fê (max) tt (Ta=25‘ 1C) Ic / I e (A) Vc e (V) 2SC2287-KA Bn an Bn Bn 2SC2287-MA bm VHF PA 38 18 1.5 17 500 30


    OCR Scan     		PDF 2SC2285A-MA 2SC2286-KA 2SC2286-MA 2SC2287-KA 2SC2287-MA 2SC2288-KÃ 2SC2288-MA 2SC2289-KA 33dBm 175MHz 2SC2291 2SC2320 2SC2338 2SA1010 2SC2289 2SC2318 2SC2329

    IRF744

    Abstract: application irf744 100-C IRF1010 Q-36
    Text: PD-9.1000 International S Rectifier IRF744 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 450V ^DS on = 0 . 6 3 0 lD = 8.8A Description Third Generation HEXFETs from International Rectifier provide the designer


    OCR Scan     		PDF IRF744 O-220 T0-220 O-220AB D-6380 IRF744 application irf744 100-C IRF1010 Q-36

    12n60c3d

    Abstract: IGBT 12n60c3D
    Text: u A Q Q ie HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Description • 24A, 600V at T c = 25°C This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transis­


    OCR Scan     		PDF HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS TA49123. TA49188. O-263AB 12n60c3d IGBT 12n60c3D

    10N120BN

    Abstract: G10N120BN ta49290 T0263AB
    Text: HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS S em iconductor January 1999 Data Sheet 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high


    OCR Scan     		PDF HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS O-263AB 10N120BN, 10N120BN G10N120BN ta49290 T0263AB

    Untitled

    Abstract: No abstract text available
    Text: HGTP2N120CND, HGT1S2N120CNDS Semiconductor D ata S h eet M arch 1999 13A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT


    OCR Scan     		PDF HGTP2N120CND, HGT1S2N120CNDS HGTP2N120CND HGT1S2N120CNDS TA49313. TA49056 RHRD4120) O-263AB

    Untitled

    Abstract: No abstract text available
    Text: HGTP5N120BN, HGT1S5N120BNS D ata S h eet Jan u ary 1999 21 A, 1200V, NPT Series N-Channel IGBT Features The HGTP5N120BN and the HGT1S5N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and


    OCR Scan     		PDF HGTP5N120BN, HGT1S5N120BNS HGTP5N120BN HGT1S5N120BNS O-263AB O-263AB

    2SB504

    Abstract: 2SB507 2SB506A 2SB508 2SB511 2SD325 2sb560 2SB506 2SB536 2SD331
    Text: - 54 - Ta=25cC, *EP(äTc=25‘ C m % f fl £ & m VcBO VcEO lc ( D O Pc Pc* (V) (V) (A) (W) (W) ICBO (max) ( j ü A) % tä 4# te 0 ^ 2 5 *0 ) [*E P (ä typ 3 hF E VcB (V) (min) (max) Vc e (V) ¡ c/ I e (A) (max) (V) (V) Ic (A) Ib (A) 2SB434G LF PA/SW -60


    OCR Scan     		PDF Ta-25-C) 2SB434G 2SB435G 2SB502A 2SB503A 2SB504 2SB504A -60SD552 2SB552 2SD553 2SB507 2SB506A 2SB508 2SB511 2SD325 2sb560 2SB506 2SB536 2SD331

    2sa10

    Abstract: 2SA1015L 2SC1815L 2sc2562 SA1011 2SA1012 2SA1013 2SA1015 2SA1035 2SA1016K
    Text: - 20 - m n Ta=25t , *En(àTc=25t;) m 2SA1011 2SA1012 2SA1013 2SA1015 2SA1015L 2SA1016 2SA1016K 2SA1018 2SA1020 2SA1022 2SA1025 2SA1029 2SA1030 2SA1031 2SA1032 2SA1034 2SA1035 2SA1036K 2SA1037K 2SA1037KLN 2SA1038 2SA1039 2SA1040 2SA1041 2SA1042 2SA1043 2SA1044


    OCR Scan     		PDF Ta-25iC) SA1011 2SA1012 2SA1013 2SA1015 2SA1015L 2SA1016 2SA1041 2SA1042 2SA1043 2sa10 2SA1015L 2SC1815L 2sc2562 SA1011 2SA1013 2SA1015 2SA1035 2SA1016K

    2SD889

    Abstract: 2SB772 KT 185 2SB754 2SB793 2SB751A 2sb764 2sb774 2SB753 2SB757
    Text: - 60 - m n. Ta=25íC, *EP(3Tc=25‘ C SS £ m S ii V’ CBO V’ ceo (V) (V) Ici DC) (A) 2SB751A PA/SW -80 -80 -4 2SB753 PSW/PA -100 -80 -7 2SB754 PSW/PA -50 -50 -7 2SB757 HS PSW/PA/Audio/Reg -40 -40 LF PA -60 LF PA LF PA LF PA 2SB761 2SB76ÎA 2SB762 2SB762A


    OCR Scan     		PDF 2SB751A 2SB753 2SB754 2SB757 2SB761 2SB761A 2SB762 2SD968 SC-62 2SB789 2SD889 2SB772 KT 185 2SB754 2SB793 2sb764 2sb774 2SB753 2SB757

    2SA1152

    Abstract: 2SC2719 2SC2770 2SC2724 2SA1154 2SC2110 2SC2132 2SC2727 2SC2159 2SC2718
    Text: - 132 - M X Ë f à Ta=25‘C, *£P(ÍTc=25‘C } m % & 2SC2712 2SC2713 2SC2714 2SC2715 2SC2716 2SC2717 2SC2718 2SC2719 2SC2720 2SC2721 2SC2724 2SC2727 2SC2731 2SC2732 2SC2733 2SC2734 2SC2735 2SC2736 2SC2738 2SC2739 2SC2740 2SC2749 2SC2750 2SC2751 2SC2752


    OCR Scan     		PDF 2SC2712 2SC2713 2SC2714 2SC2715 2SC2716 2SC2717 MP-80) 2SC2751 2SA1156 O-126) 2SA1152 2SC2719 2SC2770 2SC2724 2SA1154 2SC2110 2SC2132 2SC2727 2SC2159 2SC2718

    2SC4607

    Abstract: 2SC4614 2SC4596 2sc4622 2SC4621 2SC4570 2SC4571 2SC4572 2SC4573 2SC4574
    Text: - 208 - Ta=25‘C. *EpfáTc=25cC 2SC4570 2SC4571 2SC4572 2SC4573 2SC4574 2SC4575 2SC4576 2SC4578 2SC4579 2SC4580 2SC4581 2SC4582 2SC4589 2SC4591 2SC4592 2SC4593 2SC4594 2SC4595 2SC4596 2SC4597 2SC4598 2SC4599 2SC4600 2SC460Î 2SC4602 2SC4603 2SC4606 2SC4607


    OCR Scan     		PDF 2SC4570 2SC4571 2SC4572 2SC4573 2SC4574 2SC4575 2SC4576 2SC4600 2SC4601 2SC4602 2SC4607 2SC4614 2SC4596 2sc4622 2SC4621 2SC4572