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    onsemi NTK3134NT1G

    MOSFET N-CH 20V 750MA SOT723
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    DigiKey NTK3134NT1G Reel 36,000 4,000
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    NTK3134NT1G Ammo Pack 29 Weeks, 1 Days 1
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    NTK3134NT1G Reel 16 Weeks 12,000
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    Newark NTK3134NT1G Cut Tape 1,424 1
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    RS NTK3134NT1G Bulk 50
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    Bristol Electronics NTK3134NT1G 4,399
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    TME NTK3134NT1G 559 1
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    New Advantage Corporation NTK3134NT1G 68,000 1
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    Win Source Electronics NTK3134NT1G 337,000
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    onsemi NTK3139PT5G

    MOSFET P-CH 20V 660MA SOT723
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    DigiKey NTK3139PT5G Cut Tape 17,862 1
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    NTK3139PT5G Digi-Reel 17,862 1
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    NTK3139PT5G Reel 16,000 8,000
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    Avnet Americas NTK3139PT5G Reel 16 Weeks 16,000
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    Newark NTK3139PT5G Cut Tape 5,327 5
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    Rochester Electronics NTK3139PT5G 8,900 1
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    Richardson RFPD NTK3139PT5G 16,000
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    Chip 1 Exchange NTK3139PT5G 104,000
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    Avnet Asia NTK3139PT5G 16 Weeks 16,000
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    Avnet Silica NTK3139PT5G 17 Weeks 8,000
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    EBV Elektronik NTK3139PT5G 18 Weeks 8,000
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    Flip Electronics NTK3139PT5G 568,000
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    Master Electronics NTK3139PT5G
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    Win Source Electronics NTK3139PT5G 5,752
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    C&K PTS641TK31SMTR2LFS

    SWITCH TACTILE SPST-NO 0.05A 12V
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    DigiKey PTS641TK31SMTR2LFS Cut Tape 10,895 1
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    Newark PTS641TK31SMTR2LFS Bulk 9,000 1,500
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    onsemi NTK3134NT5G

    MOSFET N-CH 20V 750MA SOT723
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NTK3134NT5G Reel 8,000 8,000
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    Avnet Americas NTK3134NT5G Reel 16 Weeks 24,000
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    Newark NTK3134NT5G Cut Tape 6,275 5
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    Rochester Electronics NTK3134NT5G 17,987 1
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    Richardson RFPD NTK3134NT5G 24,000
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    Avnet Asia NTK3134NT5G 16 Weeks 24,000
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    Avnet Silica NTK3134NT5G 17 Weeks 8,000
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    EBV Elektronik NTK3134NT5G 18 Weeks 8,000
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    Flip Electronics NTK3134NT5G 8,000
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    Master Electronics NTK3134NT5G
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    New Advantage Corporation NTK3134NT5G 16,000 1
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    Win Source Electronics NTK3134NT5G 753,000
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    Toshiba America Electronic Components TK31V60W,LVQ

    MOSFET N-CH 600V 30.8A 4DFN
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    DigiKey TK31V60W,LVQ Digi-Reel 2,455 1
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    TK31V60W,LVQ Cut Tape 2,455 1
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    Mouser Electronics TK31V60W,LVQ
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    Verical TK31V60W,LVQ 1,033 2
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    Arrow Electronics TK31V60W,LVQ 1,033 1
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    TK31 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK31 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    TK31 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    TK310 Silec Semiconductors Shortform Data Book 1976 Short Form PDF
    TK3100 Silec Semiconductors Shortform Data Book 1976 Short Form PDF
    TK3120 Silec Semiconductors Shortform Data Book 1976 Short Form PDF
    TK3140 Silec Semiconductors Shortform Data Book 1976 Short Form PDF
    TK3160 Silec Semiconductors Shortform Data Book 1976 Short Form PDF
    TK31A60W Toshiba TK31A60 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF
    TK31A60W Toshiba Transistors - Mosfets Original PDF
    TK31A60W Toshiba Japanese - Transistors - Mosfets Original PDF
    TK31A60W,S4VX Toshiba TK31A60 - Power MOSFET - Nch 500V VDSS 700V Original PDF
    TK31C Unknown Discontinued Transistor Data Book 1975 Scan PDF
    TK31D Unknown Shortform Transistor Datasheet Guide Short Form PDF
    TK31E60W Toshiba TK31E60W - Nch 500V Original PDF
    TK31E60W Toshiba Japanese - Transistors - Mosfets Original PDF
    TK31E60W Toshiba Transistors - Mosfets Original PDF
    TK31E60W,S1VX Toshiba TK31E60 - Power MOSFET - Nch 500V VDSS 700V Original PDF
    TK31E60X,S1X Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N CH 600V TO-220 Original PDF
    TK31J60W Toshiba TK31J60W - Nch 500V Original PDF
    TK31J60W Toshiba Japanese - Transistors - Mosfets Original PDF

    TK31 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by using Super Junction Structure : DTMOS


    Original
    PDF TK31J60W5

    Untitled

    Abstract: No abstract text available
    Text: TK31A60W MOSFET シリコンNチャネルMOS形 DTMOS TK31A60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.073 Ω (標準) (2)


    Original
    PDF TK31A60W O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W5 MOSFET シリコンNチャネルMOS形 DTMOS TK31J60W5 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) 逆回復時間が早い。 : trr = 135 ns (typ.) (2) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.082 Ω (標準)


    Original
    PDF TK31J60W5

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by using Super Junction Structure : DTMOS


    Original
    PDF TK31J60W5

    Untitled

    Abstract: No abstract text available
    Text: TK31A60W MOSFETs Silicon N-Channel MOS DTMOS TK31A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA)


    Original
    PDF TK31A60W O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by using Super Junction Structure : DTMOS


    Original
    PDF TK31J60W5

    Untitled

    Abstract: No abstract text available
    Text: TK31N60X MOSFETs Silicon N-Channel MOS DTMOS TK31N60X 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance.


    Original
    PDF TK31N60X O-247

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W MOSFET シリコンNチャネルMOS形 DTMOS TK31J60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.073 Ω (標準) (2)


    Original
    PDF TK31J60W

    Untitled

    Abstract: No abstract text available
    Text: TK31N60W MOSFETs Silicon N-Channel MOS DTMOS TK31N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA)


    Original
    PDF TK31N60W O-247

    Untitled

    Abstract: No abstract text available
    Text: TK31E60X MOSFETs Silicon N-Channel MOS DTMOS-H TK31E60X 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance.


    Original
    PDF TK31E60X O-220

    Untitled

    Abstract: No abstract text available
    Text: TK31N60W MOSFETs Silicon N-Channel MOS DTMOS TK31N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    PDF TK31N60W O-247

    Untitled

    Abstract: No abstract text available
    Text: TK31N60W MOSFET シリコンNチャネルMOS形 DTMOS TK31N60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.073 Ω (標準) (2)


    Original
    PDF TK31N60W O-247

    Untitled

    Abstract: No abstract text available
    Text: TK31E60W MOSFETs Silicon N-Channel MOS DTMOS TK31E60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    PDF TK31E60W O-220

    Untitled

    Abstract: No abstract text available
    Text: TK31E60W MOSFETs Silicon N-Channel MOS DTMOS TK31E60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    PDF TK31E60W O-220

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W MOSFETs Silicon N-Channel MOS DTMOS TK31J60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA)


    Original
    PDF TK31J60W

    Untitled

    Abstract: No abstract text available
    Text: TK31A60W MOSFETs Silicon N-Channel MOS DTMOS TK31A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    PDF TK31A60W O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by using Super Junction Structure : DTMOS


    Original
    PDF TK31J60W5

    Untitled

    Abstract: No abstract text available
    Text: TK31E60W MOSFET シリコンNチャネルMOS形 DTMOS TK31E60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.073 Ω (標準) (2)


    Original
    PDF TK31E60W O-220

    TK31

    Abstract: Toggle Switches 3A120VAC T6N 600
    Text: Toggle Switches Sub-Miniature SPDT Toggle Switches TK31 Series Toggle Switches EPOXY SEAL 5.59 0.51 4.06 Ø2.54 EPOXY SEAL 4.93 2.54 0.51 1.52 4.01 8.64 9.40 5.08 0.76 3.30 0.76 0.41 2.80 5.59 8.13 5.08 Ø6.00 FLAT 2.54 4.39 8.13 5.08 TK31S6 Omit second terminal


    Original
    PDF TK31S6 TK31S1A1B1T1_ TK31S1A2B2T6_ TK31S1A2B2T7_ TK31 Toggle Switches 3A120VAC T6N 600

    Untitled

    Abstract: No abstract text available
    Text: TK31V60W MOSFETs Silicon N-Channel MOS DTMOS TK31V60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.078 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    PDF TK31V60W

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W MOSFETs Silicon N-Channel MOS DTMOS TK31J60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    PDF TK31J60W

    Untitled

    Abstract: No abstract text available
    Text: TK31V60W MOSFETs Silicon N-Channel MOS DTMOS TK31V60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.078 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    PDF TK31V60W

    Untitled

    Abstract: No abstract text available
    Text: TK31E60W MOSFETs Silicon N-Channel MOS DTMOS TK31E60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA)


    Original
    PDF TK31E60W O-220

    Untitled

    Abstract: No abstract text available
    Text: TK31N60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31N60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by used to Super Junction Structure : DTMOS


    Original
    PDF TK31N60W5 O-247