Untitled
Abstract: No abstract text available
Text: TIP31BF Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)3.0
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TIP31BF
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T1P31DF
Abstract: No abstract text available
Text: TIP31F; 31AF TIP31BF; 31CF T1P31DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT 186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio amplifier output stages, general purpose amplifiers, and high-speed
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TIP31F;
TIP31BF;
T1P31DF
TIP32F,
TIP32AF,
TIP32BF,
TIP32CF
TIP32DF.
TIP31F
bb53331
T1P31DF
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31AF
Abstract: 31df TIP32AF T1P31 31DF 4 2B T1P31C TIP31 PNP Transistor TIP31BF TIP31F TIP32BF
Text: TIP31F; 31AF TIP31BF; 31 CF T1P31DF SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a S O T 186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio am plifier output stages, general purpose amplifiers, and high-speed
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TIP31F;
TIP31BF;
T1P31DF
TIP32F,
TIP32AF,
TIP32BF,
TIP32CF
TIP32DF.
TIP31F
bS3T31
31AF
31df
TIP32AF
T1P31
31DF 4 2B
T1P31C
TIP31 PNP Transistor
TIP31BF
TIP32BF
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TIP32AF
Abstract: 31af 31df transistor tip31 TIP31BF TIP31DF TIP31F TIP32BF TIP32CF TIP32DF
Text: TIP31F; 31AF TIP31BF; 31CF TIP31DF PHILIPS INTERNATIONAL SfciE D • V 7110Ô5L 00M34Ô2 =}S3 * P H I N T- 3 3 -0 7 S IL IC O N EPITA XIA L PO W E R T R A N S IS T O R S N PN silicon power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base.
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TIP31F;
TIP31BF;
TIP31DF
00M34Ã
OT186
TIP32F,
TIP32AF,
TIP32BF,
TIP32CF
TIP32DF.
TIP32AF
31af
31df
transistor tip31
TIP31BF
TIP31DF
TIP31F
TIP32BF
TIP32DF
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TIP31AF
Abstract: TIP31BF TIP31CF TIP31DF TIP31F TIP32BF TIP32DF TIP32F
Text: TIP32F; 32AF TIP32BF; 32CF TIP32DF SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors, each in a SOT186 envelope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed
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TIP32F;
TIP32BF;
TIP32DF
OT186
TIP31F,
TIP31AF,
TIP31BF,
TIP31CF
TIP31DF.
TIP32F
TIP31AF
TIP31BF
TIP31DF
TIP31F
TIP32BF
TIP32DF
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Untitled
Abstract: No abstract text available
Text: TIP32F; 32AF TIP32BF; 32CF TIP32DF y v SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors, each in a SO T186 envelope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed
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TIP32F;
TIP32BF;
TIP32DF
TIP31F,
TIP31AF,
TIP31BF,
TIP31CF
TIP31DF.
TIP32F
LL53I
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