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    Untitled

    Abstract: No abstract text available
    Text: D E V E L O P M E N T DATA TIP3055T This data sheet contains advance information and specifications are subject to change without notice. SILICON EPITAXIAL-BASE POWER TRANSISTOR N-P-N transistor in a plastic envelope. With its p-n-p complement TIP295ST they are primarily intended


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    PDF TIP3055T TIP295ST O-220 bbS3R31 0D3SQ31 003S032

    TR TIP2955

    Abstract: 1N914 TIP2955 TIP3055 transistor sr 61 TEXAS INSTRUMENTS in914 N6128 TEXAS TIP2955
    Text: TYPE TIP295S P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR FOR POWER AM PLIFIER AND HIGH-SPEED SWITCHING APPLICATIONS RECOMMENDED FOR COMPLEMENTARY USE WITH TIP3055 mechanical data • 90 Watts at 25° C Case Temperature • 15 A Rated Collector Current


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    PDF TIP295S TIP3055 TR TIP2955 1N914 TIP2955 TIP3055 transistor sr 61 TEXAS INSTRUMENTS in914 N6128 TEXAS TIP2955

    tip 420 transistor

    Abstract: transistor tip 182 TIP30S5 TIP295S TIP2955 NPN power transistor transistor tip 420 TIP2955 TIP3055 sit transistor
    Text: Æ & m o s p e c COMPLEMENTARY SILICON POWER TRANSISTORS PNP TIP2955 NPN TIP3055 .designed for use in general-purpose amplifier and switching applications FEATURES: * Power Dissipation - PD = 90W @ Tc = 25°C * DC Current Gain hFE = 20 - 100 @ lc = 4.0 A


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    PDF TIP3055 TIP2955 \300us tip 420 transistor transistor tip 182 TIP30S5 TIP295S TIP2955 NPN power transistor transistor tip 420 TIP2955 sit transistor

    T1P3055

    Abstract: t1p29 CSD1047 TIP295 CSD1047Y
    Text: r-B OIM A C £ F G H K L M N P C- MIN. 17.75 5.2 3.8 0 1.9 14,50 33.25 20.75 11.50 1.0 18.75 0 .4 0 3.15 5.21 MAX. 18*25 5.7 4.2 0 2.1 15.10 36.75 21.25 12.25 1.30 21.65 0.60 3.45 5.72 1. 2. 3. B A SE CO LLECTO R EM ITTER A LL DIM ENSIO NS A R E IN M.M. TO BE MOUNTED WITH SIUCONE GREASE ON THE BACK SIDE.


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    PDF TIP145F TIP146F TIP147F TIP295SF T1P29SSHVF TIP305SF T1P3055HVF T1P3055 t1p29 CSD1047 TIP295 CSD1047Y

    TIP 2n3055

    Abstract: TIP 3055 transistor Amp 3055 of 2n3055 tip 2955 transistor TIP 3055 motorola power transistor 2N3055 M 3055 power transistor 2955 transistor transistor 3055
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA u d ii TIP 3055 Com plem entary Silicon Power Transistors PNP TIP 2955 . . . designed for general-purpose switching and amplifier applications. • • • DC Current Gain — hpg - 2 0 -7 0 @ Iq - 4.0 Adc Collector-Emitter Saturation Voltage — VcE sat " 1 -1 Vc|c (Max) @ Ic = 4.0 Adc


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