sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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amplifier strain gage discrete transistor
Abstract: loadcell amplifier AMP04 AMP04E AMP04EP AMP04ES 2N3904 12v rtd temperature instrumentation amplifier circuit transistor 100-1a 0-5 v to 4-20 ma converter
Text: a FEATURES Single Supply Operation Low Supply Current: 700 A Max Wide Gain Range: 1 to 1000 Low Offset Voltage: 150 V Max Zero-In/Zero-Out Single-Resistor Gain Set 8-Lead Mini-DIP and SO Packages Precision Single Supply Instrumentation Amplifier AMP04*
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AMP04*
AMP04
amplifier strain gage discrete transistor
loadcell amplifier
AMP04E
AMP04EP
AMP04ES
2N3904 12v
rtd temperature instrumentation amplifier circuit
transistor 100-1a
0-5 v to 4-20 ma converter
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LM1011N
Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
Text: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44
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ECG10
ECG11
ECG12
ECG13
ECG14
ECG15
ECG16
ECG17
ECG18
ECG19
LM1011N
JRC386D
X0238CE
UA78GKC
M51725L
MJ13005
AN6677
HA11749
MN8303
sn76131n
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jrc386d
Abstract: SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303
Text: ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44 ECG45 ECG46 ECG47 ECG48 ECG49 ECG50
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ECG10
ECG11
ECG12
ECG13
ECG14
ECG15
ECG16
ECG17
ECG18
ECG19
jrc386d
SN76131N
LM1011N
ne545b
HA1457W
X0238CE
upc1018c
UA78GKC
MJ13005
MN8303
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Untitled
Abstract: No abstract text available
Text: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages, general purpose amplifier and high-speed switching applications.
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T1P29F
TIP29AF;
TIP29BF
TIP29CF;
TIP29DF
OT186
TIP30F,
TIP30AF,
TIP30BF,
TIP30CF
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TIP290
Abstract: TIP29CF TIP30CF TIP29AF TIP29BF TIP29DF TIP29F TIP30AF TIP30BF TIP30DF
Text: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o u tp u t stages, general purpose am plifier and high-speed switching applications.
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T1P29F
TIP29AF;
TIP29BF
TIP29CF;
TIP29DF
OT186
TIP30F,
TIP30AF,
TIP30BF,
TIP30CF
TIP290
TIP29CF
TIP29AF
TIP29BF
TIP29DF
TIP29F
TIP30AF
TIP30BF
TIP30DF
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Untitled
Abstract: No abstract text available
Text: PANASONIC INDL/ELEK -CIO 1SE D • 1,132055 QG1D4E1 0 ■ Silicon NPN Power Transistors TO-220 Package Absolute Maximum Ratings Ta=25°C Rem TIP29A T1P29B TIP29C Unit 80 100 V 80 100 V Symbol TIP29 VcBO 40 60 Collector-Emitter Voltage VCEO 40 60 Emitter-Base Voltage
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O-220
TIP29
TIP29A
T1P29B
TIP29C
TIP30,
TIP30A,
TIP30B,
TIP30C
200mA
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TIP2955T
Abstract: TIP3055T
Text: DEVELOPMENT DATA T1P2955T This data sheet contains advance information and specifications are subject to change w ithout notice. _ SILICON EPITAXIAL-BASE POWER TRANSISTOR P-N-P transistor in a plastic envelope. W ith its n-p-n complement TIP3055T they are prim arily intended
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TIP2955T
TIP3055T
O-220.
bbS3T31
TIP2955T
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TIP308
Abstract: woy transistor transistor tip 30c tip 30 tip 30c tip 147 TRANSISTOR motorola tip29 LSE 0405
Text: MOT OR OL A SC 12E D 1 b3b7254 o a a s s i b s I XSTR S/ R F • 3 3 - Ö ? PNP ' NPN TIP29 T1P29A TIP29B TIP29C MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP30 TIP30A TIP30B TIP30C 1 A M PERE POWER TRANSISTORS COMPLEMENTARY SILICON COMPLEMENTARY SILICON PLASTIC
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b3b7254
TIP29
T1P29A
TIP29B
TIP29C
TIP30
TIP30A
TIP30B
TIP30C
TIP308
woy transistor
transistor tip 30c
tip 30
tip 30c
tip 147 TRANSISTOR
motorola tip29
LSE 0405
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l1s3
Abstract: T1P29C tip29a es
Text: IA a T T p o i 7 mb a m T s c s-THonsoN 0 7 e d I ? ^ -— r — • •j f t W ! \N k V {X tS v TIP29 TIP30 TIP29A TtP3°A TIP29B TIP30B fQ J lJ - T1P29C T1P3QC i 67 C 1538 4 ' 1 Ì • D ' ~T~ 3 3 " 0 e! ' - r - 3 3 '" M T ° ° 1 1 ~ E P IT A X IA L - B A S E N P N / P N P
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TIP29
TIP30
TIP29A
TIP29B
TIP30B
T1P29C
TIP29,
TIP29A,
TIP29C
l1s3
tip29a es
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TIP29
Abstract: IEC134 TIP29B TIP30 TIP50
Text: TIP29; 29A T1P29B; 29C J PHILIPS INTERNATIONAL SbE D I 713iDfl2fci □ □ 434HE= TIE WM PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS T-33-o*{ NPN silicon transistors in a plastic envelope intended fo r use in ou tput stages o f audio and television am plifier circuits where high peak powers can occur. PNP complements are TIP30 series.
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TIP29;
TIP29B;
0D4344t>
TIP30
TIP29
200Copyrighted
T-33-09
711Dfl2L
IEC134
TIP29B
TIP50
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Untitled
Abstract: No abstract text available
Text: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF PHILIPS INTERNATIONAL SbE D • 711002b 0043452 lib ■ P H I N ' SILICO N EPITAXIAL POW ER TR A NSISTO R S T-33-07 NPN silicon power transistors in a S O T 186 envelope w ith an electrically insulated mounting base,
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T1P29F
TIP29AF;
TIP29BF
TIP29CF;
TIP29DF
711002b
T-33-07
TIP29F
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Untitled
Abstract: No abstract text available
Text: TIP29D, TIP29E, T1P29F NPN SIUCON POWER TRANSISTORS Copyrtghl €> 1997, Pow er Innovations Limited, U K _ • 30 W at 25°C Case Temperature • 1 A Continuous Collector Current • 3 A Peak Collector Current • Customer-Specified Selections Available
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TIP29D,
TIP29E,
T1P29F
O-220
TJP29D
TIP29D
TIP29F
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TP30C
Abstract: A 652 tip30c TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B
Text: ÆÂMOS PEC COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS NPN TIP29 TIP29A TIP29B TÍP29C . designed for use in genera! purpose power amplifier and switching applications. FEATURES: * Coilector-Emitter Sustaining Voltage V~,v._r 40V Min - TIP29.TIP30
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TIP29
TIP30
TIP29A
TIP30A
TIP29B
TIP30B
-TiP29C
TIP30C
TP30C
A 652
tip30c
TIP29C
TIP30
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TIP3I
Abstract: No abstract text available
Text: INTEX/ SEMITRONICS CORP 57E I> • Mflti24b 0GD0324 ? discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 General Purpose Amplifier and Switching Applications IC VC B O VCEO A M IV ) PD |W ) Package IMPN 1 40 40 30 TO-220 TIP29 1 60 60 30 TO-220
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Mflti24b
0GD0324
O-220
TIP29B
TIP30A
T1P29A
TIP30
TIP29
TIP3I
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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transistor 13003 AD
Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)
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OT-23
KST06
KST05
KSC1623
BCW71
BCX70G
BCX70H
BCX70J
BCX70K
BCX71G
transistor 13003 AD
ksd-180
HF 13003
KSD180
13003 HF
KSD168
KSD966
ksd-168
PNP NPN Transistor VCEO 120V 100V Ic 7A
KSC 1.5k 250v
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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Trans-611
DT1521
2N2270
BC107-182KS
ESC182KAS
ESC182KBS
ESC1Q8-183KS
EiC183KBS
8C183KCS
BC109-184KS
AL102 ATES
2N2222A mps
KR206
AD149
TIS58
TIS88
SFT353
2N2431
2N4265
BFY29
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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BS9000,
D3007
HE4000B
80RIBUTION
BS9000
BPW22A
cm .02m z5u 1kv
pin configuration of BFW10
la4347
B2X84
TDA3653 equivalent
TRIAC TAG 9322
HEF40106BP equivalent
fx4054 core
dsq8
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T1P3055
Abstract: t1p29 CSD1047 TIP295 CSD1047Y
Text: r-B OIM A C £ F G H K L M N P C- MIN. 17.75 5.2 3.8 0 1.9 14,50 33.25 20.75 11.50 1.0 18.75 0 .4 0 3.15 5.21 MAX. 18*25 5.7 4.2 0 2.1 15.10 36.75 21.25 12.25 1.30 21.65 0.60 3.45 5.72 1. 2. 3. B A SE CO LLECTO R EM ITTER A LL DIM ENSIO NS A R E IN M.M. TO BE MOUNTED WITH SIUCONE GREASE ON THE BACK SIDE.
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TIP145F
TIP146F
TIP147F
TIP295SF
T1P29SSHVF
TIP305SF
T1P3055HVF
T1P3055
t1p29
CSD1047
TIP295
CSD1047Y
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Untitled
Abstract: No abstract text available
Text: INTRODUCTION PLASTIC ENCAPSULATED TRAN SISTO RS TRI ACS AND THYRISTO RS This catalogue provides technical descriptions and specifications on Plastic Power Semiconductors manufactured by Texas Instruments. From the earliest days o f transistors Sem iconductor C ircuit Designers have
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saa 1094
Abstract: LG tv remote control schematic ir ic transistor BU 109 T1P29B thermo couple t
Text: fu ¡in fitti lattàia, Cutot lu i h a i bltqm u F lG l'R E 18. 4-20mA Current Loop Receiver with Input Overload Protection. PO L RE 19. 0-20mA/3-5V Receiver l/sing RCV420. 4 .: s Burr-Brown IC Data Book—Linear Products I Or, btt Culutr Sirria 2/ MM-Wfftt Utt Otifl
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4-20mA
0-20mA/3-5V
RCV420.
75tiV/
47000HV)
92\lA
saa 1094
LG tv remote control schematic ir ic
transistor BU 109
T1P29B
thermo couple t
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TIP121
Abstract: TIP122 TIP29A TIP29B TIP29C TIP31 TIP31A TIP31B TIP31C TIP41
Text: TO-220 Power Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) h FE Mn Max 'c80 (MA) Max ^C8 « (V) 5 200 60 1000 1000 0.5 3 3 3 2 4 3 5 200 65 5 200 80 1000 1000 3 0.5 3 3 2 4 3 5 200 5 65
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T0220
TIP121
TIP122
TIP29A
TIP29B
TIP31A
TIP31B
TIP31C
TIP41
TIP41A
TIP29C
TIP31
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Untitled
Abstract: No abstract text available
Text: TEXA S IN ST R -COPTOÏ bS D E ^ j f l T t . l 7 S L 0□ 3 b 744 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C r 36744 - j j - o ? TIP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F N-P-N SILICON POWER TRANSISTORS J U LY 1 9 68 - RE V ISE D OCTO BER 1 9 84 •
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TIP29,
TIP29A,
TIP29B,
TIP29C,
TIP29D,
TIP29E,
TIP29F
TIP30
T0-220AB
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