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    THERMAL RESISTANCE VS. MOUNTING PAD AREA Search Results

    THERMAL RESISTANCE VS. MOUNTING PAD AREA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation

    THERMAL RESISTANCE VS. MOUNTING PAD AREA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Thermal Resistance vs. Mounting Pad Area

    Abstract: TB377
    Text: Thermal Resistance vs. Mounting Pad Area Technical Brief October 1999 TB377 Author: J. Wojslawowicz T JM – T A P DM = -Z θJA 300 RθJA = 103.2 - 24.3 250 Rθβ, RθJA (oC/W) The maximum rated junction temperature, TJM, and the


    Original     		PDF TB377 006in2 027in2 Thermal Resistance vs. Mounting Pad Area TB377

    Untitled

    Abstract: No abstract text available
    Text: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUF76105DK8 HUF76105DK8 HUF76105DK8T136 HUF76105DK8T

    76105dk8

    Abstract: AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334
    Text: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUF76105DK8 76105dk8 AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334

    76105DK8

    Abstract: AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334
    Text: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUF76105DK8 76105DK8 AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334

    76105DK8

    Abstract: AN9321 HUF76105DK8 HUF76105DK8T MS-012AA TB334
    Text: HUF76105DK8 TM Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUF76105DK8 Fil15mm) MS-012AA 330mm EIA-481 76105DK8 AN9321 HUF76105DK8 HUF76105DK8T MS-012AA TB334

    76105DK8

    Abstract: Dual N-Channel MOSFET SOP8 AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334
    Text: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUF76105DK8 76105DK8 Dual N-Channel MOSFET SOP8 AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334

    n13 sot 23

    Abstract: No abstract text available
    Text: HUF76113T3ST Data Sheet June 1999 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUF76113T3ST n13 sot 23

    AN9321

    Abstract: AN9322 HUFA75309T3ST TB334
    Text: HUFA75309T3ST Data Sheet 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUFA75309T3ST HUFA75309T3ST AN9321 AN9322 TB334

    Untitled

    Abstract: No abstract text available
    Text: HUFA75309T3ST TM Data Sheet 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUFA75309T3ST

    Untitled

    Abstract: No abstract text available
    Text: HUF76131SK8 S E M I C O N D U C T O R 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET April 1998 Features Description • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUF76131SK8 1-800-4-HARRIS

    HUFA76413DK8T

    Abstract: No abstract text available
    Text: HUFA76413DK8T N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy


    Original     		PDF HUFA76413DK8T HUFA76413DK8T

    AN7254

    Abstract: AN9321 AN9322 HUFA75307T3ST TA75307 TB334
    Text: HUFA75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET Features • 2.6A, 55V This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUFA75307T3ST AN7254 AN9321 AN9322 HUFA75307T3ST TA75307 TB334

    AN7254

    Abstract: AN7260 AN9321 AN9322 HUF75307T3ST TA75307 TB334 3TC2 5307 FAIRCHILD
    Text: HUF75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET Features • 2.6A, 55V This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUF75307T3ST AN7254 AN7260 AN9321 AN9322 HUF75307T3ST TA75307 TB334 3TC2 5307 FAIRCHILD

    3-Terminal Positive Voltage Regulators

    Abstract: lm341 lm78m12ct H03A LM78M05CH LM78M12CH LM78M15CH LM78MXX
    Text: LM341/LM78MXX Series 3-Terminal Positive Voltage Regulators General Description Features The LM341 and LM78MXX series of three-terminal positive voltage regulators employ built-in current limiting, thermal shutdown, and safe-operating area protection which makes


    Original     		PDF LM341/LM78MXX LM341 LM78MXX 3-Terminal Positive Voltage Regulators lm78m12ct H03A LM78M05CH LM78M12CH LM78M15CH

    3-Terminal Positive Voltage Regulators

    Abstract: LM341 H03A LM341T-12 LM341T-15 LM78M05CH LM78M12CH LM78M15CH LM78MXX
    Text: LM341/LM78MXX Series 3-Terminal Positive Voltage Regulators General Description Features The LM341 and LM78MXX series of three-terminal positive voltage regulators employ built-in current limiting, thermal shutdown, and safe-operating area protection which makes


    Original     		PDF LM341/LM78MXX LM341 LM78MXX CSP-9-111S2. 3-Terminal Positive Voltage Regulators H03A LM341T-12 LM341T-15 LM78M05CH LM78M12CH LM78M15CH

    AN7254

    Abstract: AN9321 AN9322 HUF75309T3ST TB334
    Text: HUF75309T3ST Data Sheet 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUF75309T3ST AN7254 AN9321 AN9322 HUF75309T3ST TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF75309T3ST Data Sheet June 1999 File Number 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET Features This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUF75309T3ST

    AN9322

    Abstract: HUF75309T3ST TB334 AN7254 AN9321 75309
    Text: HUF75309T3ST Data Sheet 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUF75309T3ST AN9322 HUF75309T3ST TB334 AN7254 AN9321 75309

    Untitled

    Abstract: No abstract text available
    Text: HUFA76413DK8T N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy


    Original     		PDF HUFA76413DK8T

    Untitled

    Abstract: No abstract text available
    Text: interrii HUF76105SK8 D ata S h e e t M ay 1999 5.54, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    OCR Scan     		PDF HUF76105SK8 100ms

    Untitled

    Abstract: No abstract text available
    Text: HUF76113SK8 interrii Data Sheet O ctober 1999 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    OCR Scan     		PDF HUF76113SK8

    76105DK8

    Abstract: No abstract text available
    Text: HUF76105DK8 S e m ic o n d u c to r October 1998 Data Sheet • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    OCR Scan     		PDF HUF76105DK8 1-800-4-HARRIS 76105DK8

    Untitled

    Abstract: No abstract text available
    Text: HUF76132SK8 Semiconductor Data Sheet June 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    OCR Scan     		PDF HUF76132SK8

    Untitled

    Abstract: No abstract text available
    Text: HUF76121SK8 S em iconductor Data Sheet April 1999 • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    OCR Scan     		PDF HUF76121SK8 TA76121 MS-012AA