76121d
Abstract: TA76121 transistor 76121D AN7254 AN9321 AN9322 HUF76121D3 HUF76121D3S HUF76121D3ST TB334
Text: HUF76121D3, HUF76121D3S Data Sheet 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76121D3,
HUF76121D3S
76121d
TA76121
transistor 76121D
AN7254
AN9321
AN9322
HUF76121D3
HUF76121D3S
HUF76121D3ST
TB334
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76121P
Abstract: 76121S HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334
Text: HUF76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76121P3,
HUF76121S3S
1999ucts
76121P
76121S
HUF76121P3
AN9321
AN9322
HUF76121S3S
HUF76121S3ST
TB334
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76121D
Abstract: No abstract text available
Text: HUF76121D3, HUF76121D3S Data Sheet 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76121D3,
HUF76121D3S
76121D
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76121D
Abstract: AN9321 AN9322 HUF76121D3 HUF76121D3S HUF76121D3ST TB334
Text: HUF76121D3, HUF76121D3S Semiconductor Data Sheet 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76121D3,
HUF76121D3S
O-252AA
330mm
EIA-481
76121D
AN9321
AN9322
HUF76121D3
HUF76121D3S
HUF76121D3ST
TB334
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76121P
Abstract: 133E-9
Text: HUF76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76121P3,
HUF76121S3S
76121P
133E-9
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TB370
Abstract: AN7254 AN9321 AN9322 HUF76121SK8 HUF76121SK8T MS-012AA
Text: HUF76121SK8 Data Sheet December 2001 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76121SK8
TB370
AN7254
AN9321
AN9322
HUF76121SK8
HUF76121SK8T
MS-012AA
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76121D
Abstract: HUF76121D3 power Diode 20A/30v transistor 76121D AN7254 AN9321 AN9322 HUF76121D3S HUF76121D3ST TB334
Text: HUF76121D3, HUF76121D3S Data Sheet 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76121D3,
HUF76121D3S
76121D
HUF76121D3
power Diode 20A/30v
transistor 76121D
AN7254
AN9321
AN9322
HUF76121D3S
HUF76121D3ST
TB334
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76121P
Abstract: 121P3 HUF76121P3 HUF76121S3S HUF76121S3ST TB334 76121S 25E5
Text: HUF76121P3, HUF76121S3S Semiconductor Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs [ /Title are manufactured using the HUF76 innovative UltraFET process. 121P3, This advanced process technology
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HUF76121P3,
HUF76121S3S
HUF76
121P3,
HUF76
121S3S
low30V,
HUF76121
76121P
121P3
HUF76121P3
HUF76121S3S
HUF76121S3ST
TB334
76121S
25E5
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76121p
Abstract: No abstract text available
Text: HUF76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76121P3,
HUF76121S3S
2002lopment.
76121p
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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76121P
Abstract: 76121 76121S HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334
Text: HUF76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76121P3,
HUF76121S3S
76121P
76121
76121S
HUF76121P3
AN9321
AN9322
HUF76121S3S
HUF76121S3ST
TB334
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Untitled
Abstract: No abstract text available
Text: HUF76121SK8 Data Sheet January 2003 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76121SK8
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76121P
Abstract: 76121S 76121 HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334 97E4
Text: HUF76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76121P3,
HUF76121S3S
76121P
76121S
76121
HUF76121P3
AN9321
AN9322
HUF76121S3S
HUF76121S3ST
TB334
97E4
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76121D
Abstract: AN9321 AN9322 HUF76121D3 HUF76121D3S HUF76121D3ST TB334
Text: HUF76121D3, HUF76121D3S Data Sheet 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76121D3,
HUF76121D3S
76121D
AN9321
AN9322
HUF76121D3
HUF76121D3S
HUF76121D3ST
TB334
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AN7254
Abstract: AN9321 AN9322 HUF76121SK8 HUF76121SK8T MS-012AA TB370
Text: HUF76121SK8 Data Sheet April 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76121SK8
AN7254
AN9321
AN9322
HUF76121SK8
HUF76121SK8T
MS-012AA
TB370
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Untitled
Abstract: No abstract text available
Text: intervil HUF76121SK8 Data S h e e t A p r il 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive Formerly developmental type TA76121. PACKAGE MS-012AA • 8A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER
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HUF76121SK8
100ms.
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76121S
Abstract: 76121P TA761
Text: HUF76121P3, HUF76121S3, HUF76121S3S Semiconductor Data Sheet 49A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76121P3,
HUF76121S3,
HUF76121S3S
O-263AB
HUF76121S3S
O-263AB
76121S
76121P
TA761
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Untitled
Abstract: No abstract text available
Text: HUF76121D3, HUF76121D3S Semiconductor Data Sheet 20A, 30 V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76121D3,
HUF76121D3S
O-252AA
T0-252AA
330mm
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76121P
Abstract: 76121S
Text: in t e la i I HUF76121P3, HUF76121S3S D a ta S h e e t 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channei power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76121P3,
HUF76121S3S
HUF76121S3S
AN7254
AN7260.
76121P
76121S
|
76121D
Abstract: F76121D3S
Text: interrii HUF76121D3, HUF76121D3S D a ta S h e e t 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76121D3,
HUF76121D3S
HUF76121D3S
AN7260.
76121D
F76121D3S
|
Untitled
Abstract: No abstract text available
Text: HUF76121SK8 S em iconductor Data Sheet April 1999 • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HUF76121SK8
TA76121
MS-012AA
|
76121P
Abstract: No abstract text available
Text: HUF76121P3, HUF76121S3S S em iconductor Data Sheet 47A, 30 V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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PDF
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HUF76121P3,
HUF76121S3S
HUF76121
76121P
|
Untitled
Abstract: No abstract text available
Text: HUF76121D3, HUF76121D3S Semiconductor Data Sheet 20A, 30 V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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PDF
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HUF76121D3,
HUF76121D3S
HUF76121D3S
T0-252AA
EIA-481
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