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    fast recovery diode 600v 5A

    Abstract: TFF5N60 DB-198 0421L
    Text: TAK CHEONG N-Channel Power MOSFET 4.5A, 600V, 2.4Ω 1 = Gate 2 = Drain 3 = Source 1 General Description 2 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced


    Original     		PDF O-220FP DB-100 fast recovery diode 600v 5A TFF5N60 DB-198 0421L

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    Abstract: No abstract text available
    Text: TAK CHEONG N-Channel Power MOSFET 4.5A, 600V, 2.4Ω General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state


    Original     		PDF O-220FP DB-100