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KIOXIA TC58NYG1S3HBAI6 IC FLASH 2GBIT PARALLEL 67VFBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TC58NYG1S3HBAI6	Tray	143		1	1 $3.83 10 $3.406 100 $3.059 1000 $2.73851 10000 $2.68135	Buy Now
Mouser Electronics	TC58NYG1S3HBAI6		142			1 $3.78 10 $3.36 100 $3.36 1000 $3.36 10000 $3.36	Buy Now
KIOXIA TC58NYG1S3HBAI4 IC FLASH 2GBIT PARALLEL 63TFBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TC58NYG1S3HBAI4	Tray			210	1 - 10 - 100 - 1000 $3.58448 10000 $3.58448	Buy Now
Mouser Electronics	TC58NYG1S3HBAI4					1 $3.83 10 $3.48 100 $3.48 1000 $3.48 10000 $3.48	Get Quote
Toshiba Electronic Devices & Storage Corporation TC58NYG1S3EBAI4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	TC58NYG1S3EBAI4		16			1 $12 10 $8 100 $8 1000 $8 10000 $8	Buy Now
Others TC58NYG1S3HBAI6 INSTOCK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip 1 Exchange	TC58NYG1S3HBAI6		116,246			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TC58NYG1S8HBAI6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	TC58NYG1S8HBAI6		20,778			1 - 10 - 100 $3.153 1000 $2.827 10000 $2.827	Buy Now

TC58NYG1 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TC58NYG1S3EBAI4		Toshiba	TC58NYG1S3 - IC FLASH 1.8V PROM, Programmable ROM		Original	PDF
TC58NYG1S3HBAI4		Toshiba Memory America	Integrated Circuits (ICs) - Memory - 2G NAND SLC 24NM BGA		Original	PDF
TC58NYG1S3HBAI6		Toshiba Memory America	Integrated Circuits (ICs) - Memory - IC FLASH 2G PARALLEL 67VFBGA		Original	PDF

TC58NYG1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TC58NYG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3HBAI6 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.	Original	PDF	TC58NYG1S3HBAI6 TC58NYG1S3HBAI6 2048blocks. 2176-byte 2013-01-18C
TC58NYG1S3EBAI4 Abstract: P-TFBGA63-0911-0 Text: TC58NYG1S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.	Original	PDF	TC58NYG1S3EBAI4 TC58NYG1S3E 2048blocks. 2112-byte 2012-09-01C TC58NYG1S3EBAI4 P-TFBGA63-0911-0
tc58nyg1s3ebai5 Abstract: TC58NYG1 Text: TC58NYG1S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.	Original	PDF	TC58NYG1S3EBAI5 TC58NYG1S3E 2048blocks. 2112-byte 2011-03-01C tc58nyg1s3ebai5 TC58NYG1
TC58NYG1S3ETA00 Abstract: TC58NYG1 TC58NYG1S3 Text: TC58NYG1S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.	Original	PDF	TC58NYG1S3ETA00 TC58NYG1S3E 2048blocks. 2112-byte 2011-03-01C TC58NYG1S3ETA00 TC58NYG1 TC58NYG1S3
TC58NYG1S3ETAI0 Abstract: 103A15 Text: TC58NYG1S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.	Original	PDF	TC58NYG1S3ETAI0 TC58NYG1S3E 2048blocks. 2112-byte 2011-03-01C TC58NYG1S3ETAI0 103A15
Untitled Abstract: No abstract text available Text: TC58NYG1S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3HBAI4 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.	Original	PDF	TC58NYG1S3HBAI4 TC58NYG1S3HBAI4 2048blocks. 2176-byte 2013-01-18C
THGBM4G4D1HBAIR Abstract: TH58TVG5S2FBA49 thgbm4g5d1hbair TC58NVG3S0FTA00 TH58TAG7S2FBA89 TC58DVG3S0ETAI0 TH58TAG6S2FBA89 TH58NVG4S0FTA20 TH58NVG6S2FTA20 THGBM4G6D2HBAIR Text: SEMICONDUCTOR GENERAL CATALOG Memories and Storage Devices NAND Flash Memory 1 2011/9 SCE0004L NAND Flash Memory SLC Small Block Capacity 512 Mbits 512 Mbits 512 Mbits 512 Mbits 512 Mbits 512 Mbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits Part Number	Original	PDF	SCE0004L TC58DVM92A5TA00 TC58DVM92A5TAI0 TC58DVM92A5BAJ3 TC58DYM92A5TA00 TC58DYM92A5TAI0 TC58DYM92A5BAJ3 TC58DVG02A5TA00 TC58DVG02A5TAI0 TC58DVG02A5BAJ4 THGBM4G4D1HBAIR TH58TVG5S2FBA49 thgbm4g5d1hbair TC58NVG3S0FTA00 TH58TAG7S2FBA89 TC58DVG3S0ETAI0 TH58TAG6S2FBA89 TH58NVG4S0FTA20 TH58NVG6S2FTA20 THGBM4G6D2HBAIR
TC58NVG2S0FTA00 Abstract: TC58NVG2S3EBAI5 Toshiba NAND 224 LM3661TL-1.25 Text: NAND Flash Memory SLC Middle Capacity Product list of NAND Flash Memory SLC Middle Capacity Program Access Time Capacity bit Tech. Page Block Power Operating Node Size Size Supply Temperature nm bit bit V °C /Erase Time typ. I/O Package Part Number Serial	Original	PDF	48-P-1220- TC58NVM9S3ETAI0 TC58NVM9S3EBAI4 TC58NVM9S3EBAI6 TC58NYM9S3EBAI4 TC58NYM9S3EBAI6 TC58DVG02D5TA00 TC58NVG2S3EBAI5 P-TFBGA63-1013- TC58NYG2S3EBAI5 TC58NVG2S0FTA00 TC58NVG2S3EBAI5 Toshiba NAND 224 LM3661TL-1.25