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    Toshiba America Electronic Components TC58DVM72A1TG00

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    ComSIT USA TC58DVM72A1TG00 23,005
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    TC58DVM72A1TG00

    Abstract: No abstract text available
    Text: TC58DVM72A1TG00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M x 8 BITS CMOS NAND E2PROM DESCRIPTION Lead-Free The device is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The device uses single power supply (2.7 V to 3.6


    Original     		PDF TC58DVM72A1TG00 128-MBIT 528-byte TC58DVM72A1TG00