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    TC55V040 Search Results

    TC55V040 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC55V040AFT Toshiba (TC55V040ATR/AFT) 8-Bit FULL CMOS SRAM Scan PDF
    TC55V040AFT-55 Toshiba 524,288 Word By 8 Bit Full CMOS Static RAM Original PDF
    TC55V040AFT-55 Toshiba 524,288-Word BY 8-BIT FULL CMOS STATIC RAM Original PDF
    TC55V040AFT-55 Toshiba Scan PDF
    TC55V040AFT-70 Toshiba 524,288 Word By 8 Bit Full CMOS Static RAM Original PDF
    TC55V040AFT-70 Toshiba 524,288-Word BY 8-BIT FULL CMOS STATIC RAM Original PDF
    TC55V040AFT-70 Toshiba Scan PDF
    TC55V040FT-10 Toshiba 524,288 Word by 8 Bit Full CMOS Static RAM Scan PDF
    TC55V040FT-10 Toshiba Scan PDF
    TC55V040FT-70 Toshiba 524,288 Word by 8 Bit Full CMOS Static RAM Scan PDF
    TC55V040FT-70 Toshiba Scan PDF
    TC55V040FT-85 Toshiba 524,288 Word by 8 Bit Full CMOS Static RAM Scan PDF
    TC55V040FT-85 Toshiba Scan PDF
    TC55V040TR Toshiba (TC55V040FT/TR) 8-Bit FULL CMOS SRAM Scan PDF
    TC55V040TR-10 Toshiba Scan PDF
    TC55V040TR-70 Toshiba Scan PDF
    TC55V040TR-85 Toshiba Scan PDF

    TC55V040 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TC55V040AFT

    Abstract: TC55V040AFT-55
    Text: TC55V040AFT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V040AFT is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V


    Original     		TC55V040AFT-55 288-WORD TC55V040AFT 304-bit PDF

    TC55V040AFT

    Abstract: TC55V040AFT-55 TSOP40-P-1014
    Text: TC55V040AFT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V040AFT is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V


    Original     		TC55V040AFT-55 288-WORD TC55V040AFT 304-bit TSOP40-P-1014 PDF

    TC55V040AFT

    Abstract: TC55V040AFT-55 TSOP40-P-1014
    Text: TC55V040AFT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V040AFT is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V


    Original     		TC55V040AFT-55 288-WORD TC55V040AFT 304-bit TSOP40-P-1014 PDF

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000 PDF

    256kx8 sram 5v

    Abstract: toshiba TSOP toshiba Nand flash bga SRAM 512*8 NAND FLASH BGA 256kx8 sram 128kx16 toshiba nand Toshiba America Electronics toshiba nand flash 4Mb
    Text: Toshiba America Electronics Search SRAM - Low Power Asynchronous Press Releases | Select One DRAM Components DRAM Components Archive DRAM Modules DRAM Modules (Archive) Flash - NOR Flash - NAND 5V Flash - NAND 3.3V Flash - SmartMedia Multi-Chip Package SRAM - Low Power


    Original     		TC551001C, 128Kx8 TC551001CI, TC554001A-V TC554001AI ismatch/20000921/09112000/TOSH/09112000/1 TC55V200 TC55V2001 TC55V2001I 256kx8 sram 5v toshiba TSOP toshiba Nand flash bga SRAM 512*8 NAND FLASH BGA 256kx8 sram 128kx16 toshiba nand Toshiba America Electronics toshiba nand flash 4Mb PDF

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN PDF

    TC59SM716FT-75

    Abstract: TC59SM708FT-75 TC59RM716GB THMY6416H1EG-75 TSOP 48 Package nand memory toshiba TH50VSF3681AASB TSOPII-54 16MX72 thmr1e16e THMY6432G1EG-75
    Text: TOSHIBA AMERICA ELECTRONIC COMPONENTS DRAM COMPONENT PRODUCTS SELECTION GUIDE January 2002 Subject to change without notice ORG TYPE PKG SPEED (ns) BANKS ROW/ COL STATUS (2) Des Rec(3) FEATURES DATASHEET TC59RM718MB/RB(1) 8Mx18 Rambus CSP-62 800/711/600 MHz


    Original     		TC59RM718MB/RB 8Mx18 CSP-62 PC800/700/600 TC59RM716MB/RB 8Mx16 TC59RM716GB TC59SM716FT-75 TC59SM708FT-75 TC59RM716GB THMY6416H1EG-75 TSOP 48 Package nand memory toshiba TH50VSF3681AASB TSOPII-54 16MX72 thmr1e16e THMY6432G1EG-75 PDF

    2fu smd transistor

    Abstract: Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT
    Text: Memory MOS Memory Lineup • Static RAM Capacity bits Device TC55V1001ASTI/ASRI 1M Organization Access time (ns) Power supply voltage (V) 128 K X 8 TC55V2001STI/SRI Package Pins TSOP(8 X 13.4) 32 TSOP- (10 X 14) 40 TSOP- (0.4 inch) 44 256 K X 8 TC55V020FT/TR


    Original     		TC55V1001ASTI/ASRI TC55V2001STI/SRI TC55V020FT/TR TC55V2161FTI TC55V200FT/TR TC55V040FT/TR TC55V400FT/TR TC58VT TC75S55FU 2fu smd transistor Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT PDF

    th50vpf

    Abstract: TH50VPF5783 TC55VEM208ASTN55 th58nvg TC554161AFT-70L TC554161AFT-70 TC55V8512JI-12 TC55VD1636FFI-150 tc58128aft TC58NVG0S3AFT00
    Text: MOS Memories Dynamic RAMs Static RAMs NOR Flash Memories NAND E2PROM Media Card MCPs multi-chip packages z 2 z 3 z 10 z 11 z 12 z 13 1 Dynamic RAMs Fast Cycle RAM (FCRAMTM ) (DDR) Capacity 256 Mbits 288 Mbits Product No. — TC59LM806CFT-50 — TC59LM806CFT-55


    Original     		TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60 TC59LM814CFT-50 TC59LM814CFT-55 TC59LM814CFT-60 TC59LM818DMB-30 TC59LM818DMB-33 TC59LM818DMB-40 64M/32M th50vpf TH50VPF5783 TC55VEM208ASTN55 th58nvg TC554161AFT-70L TC554161AFT-70 TC55V8512JI-12 TC55VD1636FFI-150 tc58128aft TC58NVG0S3AFT00 PDF

    package tsop1

    Abstract: TA2131FL TC7MBD3244FK TB6537P TC55V020TR TC7MB3244FK TC7MB3245FK TC7MBD3245FK US20
    Text: 東芝半導体情報誌アイ 1999 4月号 発行/（株）東芝 セミコンダクター社 電子デバイス営業事業部 営業企画部 TEL. 03-3457-3453 FAX. 03-5444-9431 c mi Se CONTENTS INFORMATION ye 1999年4 u c to r e 月号 ond vol.82 Vo


    Original     		TC7MB3244FK TC7MB3245FK TC7MBD3244FK TC7MBD3245FK4 -48pin12mm TC55V400XB-85/-10 TC55V020TR-85/-10 TC55V400FT-85/-10 TSOP-40pin10mm package tsop1 TA2131FL TC7MBD3244FK TB6537P TC55V020TR TC7MB3244FK TC7MB3245FK TC7MBD3245FK US20 PDF

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


    Original     		64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V040FT/TR-85,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V040FT/TR is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 2.7


    OCR Scan     		TC55V040FT/TR-85 288-WORD TC55V040FT/TR 304-bit 40-P-1014-0 20adl PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V040AFT/ATR-55,-70 TENTATIVE TO SHIBA M OS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V040AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524,288 words


    OCR Scan     		TC55V040AFT/ATR-55 288-WORD TC55V040AFT/ATR 304-bit are40AFT/ATR-55 40-P-1014-0 PDF

    uei 005

    Abstract: No abstract text available
    Text: TOSHIBA TC55V040FT/TR-85,-10 TEN T A T IV E T O S H IB A M O S D IG ITAL INTEG RATED CIRCUIT SILICON G A T E C M O S 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V040FT/TR is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8


    OCR Scan     		TC55V040FT/TR-85 288-WORD TC55V040FT/TR 304-bit 40-P-1014-0 TC55V040FT7TR-85 TC55V040FT/TR-85t-10 uei 005 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V040AFT/ATR-55,-70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V040AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single


    OCR Scan     		TC55V040AFT/ATR-55 288-WORD TC55V040AFT/ATR 304-bit 40-P-1014-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TCSSVtMOFT/TR/XB-yO^SS,-! 0 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V040FT/TR/XB ia a 4,194,304-bit static random access memory SRAM organized as 524,288 words


    OCR Scan     		288-WORD TC55V040FT/TR/XB 304-bit TC55V040 R/XB-70 40-P-1014-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: H3S- TOSHIBA 4Mbit Static RAM TC55V040AFT/ATR Data Sheet TOSHIBA TC55V040AFT/ATR-55,-70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V040AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524,288 words


    OCR Scan     		TC55V040AFT/ATR TC55V040AFT/ATR-55 288-WORD 304-bit 40-P-1014-0 TC55V040AFT/ATR-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V040FT/TR-85,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V040FT/TR is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 2.7


    OCR Scan     		TC55V040FT/TR-85 288-WORD TC55V040FT/TR 304-bit 40-P-1014-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC55V040FT/TR-70#-85#-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V040FT/TR is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8


    OCR Scan     		TC55V040FT/TR-70 288-WORD TC55V040FT/TR 304-bit 40-P-1014-0 PDF