Untitled
Abstract: No abstract text available
Text: 2N3792 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL BASE POWER TANSISTORS 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060) 11.43 (0.450) 6.35 (0.250)
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2N3792
2N3792"
2N3792
2N3792CECC
2N3792LPCECC
2N3792SMD
2N3792SMD-JQR-B
O276AB)
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2N3792
Abstract: tansistors TANSISTOR
Text: 2N3792 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL BASE POWER TANSISTORS 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060) 11.43 (0.450) 6.35 (0.250)
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2N3792
200mA
2N3792
tansistors
TANSISTOR
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CHE, NP80N055DHE, NP80N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Tansistor designed for high current switching applications.
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NP80N055CHE,
NP80N055DHE,
NP80N055EHE
NP80N055CHE
O-220AB
O-262
NP80N055DHE
O-263
O-220AB)
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MP-25
Abstract: NP80N055CHE NP80N055DHE NP80N055EHE NP80N055KHE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CHE,NP80N055DHE,NP80N055EHE,NP80N055KHE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Tansistor designed for high current switching applications.
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NP80N055CHE
NP80N055DHE
NP80N055EHE
NP80N055KHE
O-262
NP80N055EHE
O-220AB
NP80N055DHE
NP80N055CHE
O-263
MP-25
NP80N055KHE
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TANSISTOR
Abstract: MMBTA05LT1 VCBO-60V
Text: MMBTA05LT1 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TANSISTOR High Collector-Emitter Voltage:Vcbo=60V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW Ta=25 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Symbol Rating 2.4
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MMBTA05LT1
500mA
225mW
100mA
100mA
100MHz
062in
300uS
MMBTA05LT1
TANSISTOR
VCBO-60V
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pnp array
Abstract: Q62702-C2411 marking code w1s transistor Common collector configuration
Text: BCR 10PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=10kΩ, R2=10kΩ) Tape loading orientation
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Q62702-C2411
OT-363
Nov-26-1996
pnp array
marking code w1s
transistor Common collector configuration
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Q62702-C2486
Abstract: transistor digital 47k 22k PNP NPN Marking wfs sot
Text: BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) Tape loading orientation
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Q62702-C2486
OT-363
Nov-26-1996
transistor digital 47k 22k PNP NPN
Marking wfs sot
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MMBTA05LT1
Abstract: TANSISTOR
Text: MMBTA05LT1 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TANSISTOR High Collector-Emitter Voltage:Vcbo=60V * Collector Current: Ic=500mA * Collector Dissipation: Pc=225mW Ta=25 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Symbol Rating 2.4
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MMBTA05LT1
500mA
225mW
100mA
100mA
100MHz
062in
300uS
MMBTA05LT1
TANSISTOR
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G8050S
Abstract: G8550S TANSISTOR
Text: CORPORATION G8550S ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B PNP EPITAXIAL PLANAR TANSISTOR Description The G8550S is designed for general purpose amplifier applications. Features * High DC Current gain: 100-500 at IC= 150mA *Complementary to G8050S
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G8550S
2004/11/29B
G8550S
150mA
G8050S
G8050S
TANSISTOR
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Untitled
Abstract: No abstract text available
Text: 2N3792 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL BASE POWER TANSISTORS 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060) 11.43 (0.450) 6.35 (0.250)
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2N3792
O-204AA)
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NP80N055MHE
Abstract: 80N055 NP80N055MHE-S18-AY NP80N055NHE NP80N055NHE-S18-AY
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP80N055MHE,NP80N055NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Tansistors designed for high current switching applications. ORDERING INFORMATION
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NP80N055MHE
NP80N055NHE
NP80N055MHE-S18-AY
O-220
MP-25K)
NP80N055NHE-S18-AY
O-262
MP-25SK)
O-220)
80N055
NP80N055MHE-S18-AY
NP80N055NHE
NP80N055NHE-S18-AY
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transistor marking code wts
Abstract: pnp array Q62702-C2496 tansistor npn transistor bc icbo nA npn Tansistor BC
Text: BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ PNP: R1 = 2.2kΩ, R2 = 47kΩ
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Q62702-C2496
OT-363
Dec-09-1996
transistor marking code wts
pnp array
tansistor npn
transistor bc icbo nA npn
Tansistor BC
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Untitled
Abstract: No abstract text available
Text: 2N3792 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL BASE POWER TANSISTORS 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060) 11.43 (0.450) 6.35 (0.250)
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Original
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PDF
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2N3792
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CHE, NP80N055DHE, NP80N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Tansistor designed for high current switching applications.
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Original
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PDF
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NP80N055CHE,
NP80N055DHE,
NP80N055EHE
NP80N055CHE
NP80N055DHE
O-220AB
O-262
O-263
O-220AB)
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit •Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47ki2, R2 = 47k£2 PNP: R1 = 2.2k£ì, R2 = 47k£2
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47ki2,
Q62702-C2496
OT-363
235LQ5
D12Qb7M
BCR48PN
D12Qb75
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2SD2499 equivalent
Abstract: tansistor 2SD2499 2-16E3A 2SC2482
Text: TO SHIBA 2SD2499 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SD2499 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV High Voltage : V C BO - 1500V • High Speed • _ O -* ' O : tf=0.3/*s (Typ. o r\i 4.0 Collector Metal (Fin) is Fully Covered with Mold Resin.
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OCR Scan
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2SD2499
2SD2499 equivalent
tansistor
2SD2499
2-16E3A
2SC2482
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2SC5129
Abstract: No abstract text available
Text: TO SH IB A 2SC5129 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2 S C 5 1 29 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV. in — :— ✓ o I o r ° •too ' in-H CM 'p J f t E►H 2.3 MAX 1 1 Cinvi ' *25 0.9 5 MAX
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2SC5129
--1500V
2SC5129
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transistor bc 577
Abstract: bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575
Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47k£2, R2 = 47kQ PNP: R1 = 2.2kfl, R2 = 47ki2
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47ki2
Q62702-C2496
OT-363
transistor bc 577
bc 574 transistor
common collector pnp array
transistor marking code wts
transistor Bc 574
47k2
MARKING wts sot363
marking 32 SOT-363
transistor BC 575
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5142 TO SHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE ? < ; r M T s i V • ù. i Unit in mm H O R IZO N TA L DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV 20.5MAX. HIGH SPEED SW ITCHING APPLICATIONS • • i- High Voltage : VcBO = 1500V
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OCR Scan
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PDF
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2SC5142
15/is
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SD2498 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2498 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV • • High Voltage : V c b o = 1500V Low Saturation Voltage : v C E s a t = 5V (Max-)(Ic = 4A, IB = 0.8A) High Speed : tf=0.4//s(Typ.)
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OCR Scan
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2SD2498
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564 sot363
Abstract: No abstract text available
Text: SIEMENS BCR 22PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=22k£2, R2=22k£i) Tape loading orientation
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OCR Scan
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PDF
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Q62702-C2375
OT-363
564 sot363
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array »Switching circuit, inverter, interface circuit, drive circuit * Two galvanic internal isolated NPN/PNP Transistor in one package • Built In bias resistor (R ^IO kiî, R2=47kiî) Tape loading orientation
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OCR Scan
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PDF
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OT-363
Q62702-C2495
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tansistor
Abstract: 2SD2498 2-16E3A 2SC2482
Text: TOSHIBA 2SD2498 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SD2498 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV High Voltage : V C BO - 1500V • High Speed • _ ^ Low Saturation Voltage : VC E sat = 5V(Max.)(IC = 4A, IB = 0.8A) 3.0 ±0.3 p-(
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OCR Scan
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PDF
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2SD2498
tansistor
2SD2498
2-16E3A
2SC2482
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tansistor
Abstract: 2SC5048 2-16E3A 2SK528
Text: TOSHIBA 2SC5048 TOSHIBA TANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SC5048 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV 15.5 ± 0.5 HIGH SPEED SWITCHING APPLICATIONS • • 3.0 ±0.3 wí¡ High Voltage : VCBO- 1500V
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OCR Scan
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2SC5048
-10ms
tansistor
2SC5048
2-16E3A
2SK528
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