HUF76107P3
Abstract: AN7260 AN7254 AN9321 AN9322 TB334 TC298
Text: HUF76107P3 Data Sheet December 2001 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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HUF76107P3
HUF76107P3
AN7260
AN7254
AN9321
AN9322
TB334
TC298
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PDF
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HUF76107P3
Abstract: 76107P AN7254 AN7260 AN9321 AN9322 TB334 TC298
Text: HUF76107P3 Data Sheet October 1999 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs File Number 4382.5 Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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HUF76107P3
HUF76107P3
76107P
AN7254
AN7260
AN9321
AN9322
TB334
TC298
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PDF
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MOSFET 76107D
Abstract: 76107d TC298
Text: HUF76107D3, HUF76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76107D3,
HUF76107D3S
MOSFET 76107D
76107d
TC298
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PDF
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TC298
Abstract: No abstract text available
Text: HUF76107P3 Data Sheet October 1999 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Ordering Information PART NUMBER HUF76107P3 PACKAGE TO-220AB 4382.5 Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using
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HUF76107P3
TC298
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PDF
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76107d
Abstract: MOSFET 76107D TA76107 ta7610 HUF76107D3S HUF76107D3ST TB334 HUF76107D3 AN7254 AN9321
Text: HUF76107D3, HUF76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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Original
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HUF76107D3,
HUF76107D3S
76107d
MOSFET 76107D
TA76107
ta7610
HUF76107D3S
HUF76107D3ST
TB334
HUF76107D3
AN7254
AN9321
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PDF
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76107d
Abstract: MOSFET 76107D AN7254 AN9321 AN9322 HUF76107D3 HUF76107D3S HUF76107D3ST TB334 TC298
Text: HUF76107D3, HUF76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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Original
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HUF76107D3,
HUF76107D3S
2003opment.
76107d
MOSFET 76107D
AN7254
AN9321
AN9322
HUF76107D3
HUF76107D3S
HUF76107D3ST
TB334
TC298
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF76107D3, HUF76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title HUF76 107D3, HUF76 107D3 S /Subject (20A, 30V, 0.052 Ohm, NChannel, Logic Level UltraF ET Power MOSFETs) /Autho r () /Keywords (Intersil Corporation,
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HUF76107D3,
HUF76107D3S
HUF76
107D3,
107D3
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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PDF
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76107d
Abstract: HUF76107D3S MOSFET 76107D AN7254 AN9321 AN9322 HUF76107D3 HUF76107D3ST TB334 TC298
Text: HUF76107D3, HUF76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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Original
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HUF76107D3,
HUF76107D3S
200opment.
76107d
HUF76107D3S
MOSFET 76107D
AN7254
AN9321
AN9322
HUF76107D3
HUF76107D3ST
TB334
TC298
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PDF
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HUF76107P3
Abstract: AN7254 AN7260 AN9321 AN9322 TB334 76107P TC298
Text: HUF76107P3 Data Sheet October 1999 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title HUF7 6107P 3 /Subject (20A, 30V, 0.052 Ohm, NChannel, Logic Level UltraF ET Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel,
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HUF76107P3
6107P
O-220AB
HUF76107P3
AN7254
AN7260
AN9321
AN9322
TB334
76107P
TC298
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PDF
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HUF76107P3
Abstract: AN7254 AN7260 AN9321 AN9322 TB334 TC298
Text: HUF76107P3 Data Sheet January 2003 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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Original
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HUF76107P3
HUF76107P3
AN7254
AN7260
AN9321
AN9322
TB334
TC298
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PDF
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76107P
Abstract: ms101c DS20A TA76107
Text: interrii HUF76107P3 Data Sheet O ctober 1999 20A, 30V, 0.052 Ohm, N-Channeì, Logic Level UltraFET Power MOSFETs F ile N um ber 4382.5 Features • Logic Level G ate Drive Th ese N -Channel power M O S F E T s are m anufactured using • 20A, 3 0V the innovative UltraFET process.
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OCR Scan
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HUF76107P3
HUF76107P3
AN7260.
76107P
ms101c
DS20A
TA76107
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PDF
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76107d
Abstract: TA76107 F76107D3S F7610 dlis
Text: in te r r ii HUF76107D3, HUF76107D3S Data S heet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Th ese N -Channel power u m t$ ' M O S F E T s are m anufactured using J u ly 1999 F ile N u m b e r 4701.1 Features • Logic Level G ate Drive
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OCR Scan
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HUF76107D3,
HUF76107D3S
HUF76107D3S
AN7260.
76107d
TA76107
F76107D3S
F7610
dlis
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PDF
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Untitled
Abstract: No abstract text available
Text: HUF76107P3 Semiconductor Data Sheet February 1999 20A, 30 V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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OCR Scan
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HUF76107P3
30e-3,
1e-12
1e-10
96e-6
1e6/50)
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PDF
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76107d
Abstract: TC298
Text: HUF76107D3, HUF76107D3S Semiconductor Data Sheet 20A, 30 V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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HUF76107D3,
HUF76107D3S
HUF76107
76107d
TC298
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PDF
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76107d
Abstract: TC298
Text: ASSESS? HUF76107P3, HUF76107D3, HUF76107D3S 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs June 1998 Description Features m • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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OCR Scan
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HUF76107P3,
HUF76107D3,
HUF76107D3S
TB334,
HUF76107D3S
T0-252AA
330mm
EIA-481
76107d
TC298
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PDF
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