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    T6P10E

    Abstract: nh TRANSISTOR MTD6P10ET4G P10EG AN569 MTD6P10E MTD6P10EG MTD6P10ET4
    Text: MTD6P10E Preferred Device Power MOSFET 6 Amps, 100 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		MTD6P10E MTD6P10E/D T6P10E nh TRANSISTOR MTD6P10ET4G P10EG AN569 MTD6P10E MTD6P10EG MTD6P10ET4 PDF

    T6P10E

    Abstract: MTD6P10ET4G
    Text: MTD6P10E Preferred Device Power MOSFET 6 Amps, 100 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		MTD6P10E MTD6P10E/D T6P10E MTD6P10ET4G PDF