Untitled
Abstract: No abstract text available
Text: MICRON SE M I C ON DU C TO R INC b3E D • blllSHR DDGfibD? 7 3 e! * M R N MICRQN I M T 4 C 8 5 1 2 /3 5 1 2 K X 8 W ID E D R A M SEBICO M O UCTO Rinc WIDE DRAM 512K X 8 DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, timing, functions and
|
OCR Scan
|
024-cycle
C19S3.
MT4C8512/3
MT4CIS12/3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 512K WIDE DRAM MT4C8512/3 L WIDE DRAM X 8 512K x 8 DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-perform ance CM OS silicon-gate process
|
OCR Scan
|
MT4C8512/3
MT4C8513
024-cycle
128ms
350mW
28-Pin
MT4C8512/3L
Z1993.
T4C8512/3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 512K X 8 M T 4 C 8 5 1 2/3 L W ID E D R A M 512K x 8 DRAM WIDE DRAM FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-performance CMOS silicon-gate process
|
OCR Scan
|
MT4C8513
024-cycle
128ms
350mW
MT4C8512/3
|
PDF
|
LM 8512
Abstract: T4C marking marking t4c
Text: ADVANCE M T4C 8512/3 S 512K x 8 W IDE DRAM M IC R O N WIDE DRAM 512K x 8 DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-perform ance CM O S silicon-gate process
|
OCR Scan
|
MT4C8513
024-cycle
128ms
350mW
28-Pin
MT4C8512/3S
MT4C8512/3
LM 8512
T4C marking
marking t4c
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPR i 1993 PRELIMINARY MICRON • 512K X SEMICONDUCTOR MC WIDE DRAM MT4C8512/3 L WIDE DRAM 8 512K x 8 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses
|
OCR Scan
|
MT4C8512/3
MT4C8513
024-cycle
128ms
350mW
28-Pin
S12/3L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT4C8512/3 5 1 2 K x 8 WIDE DRAM |U|IC=RON 512K WIDE DRAM X 8 DRAM WIDE DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, tim ing, functions and packages • Address entry: ten row-addresses, nine columnaddresses
|
OCR Scan
|
MT4C8512/3
024-cycle
MT4C8513
28-Pin
DQ2512/3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 512 K 512K WIDE DRAM X X M T4C851 2/3 8 W ID E D R A M 8 DRAM WIDE DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses
|
OCR Scan
|
T4C851
024-cycle
T4C8513
28-Pin
MT4C8512/3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 512K WIDE DRAM MT4C8512/3 L WIDE DRAM X 8 512K x 8 DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View OPTIONS • M ASKED W RITE Not available Available • Packages Plastic SOJ (400 mil) Plastic TSOP (400 mil) Plastic ZIP (375 mil)
|
OCR Scan
|
MT4C8512/3
28-Pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M IC R O N • 512K X U M ic o N o u c rio n . « e WIDE DRAM MT4C8512/3 L WIDE DRAM 8 512K x 8DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard x8 pinouts, tim ing, functions and packages • Address entry: ten row-addresses, nine columriaddresses
|
OCR Scan
|
MT4C8512/3
MT4C8513
024-cycle
128ms
28-Pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 512K WIDE DRAM 512K X 8 X 8 MT4C8512/3 WIDE DRAM DRAM FAST-PAGE-MODE FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-performance CMOS silicon-gate process
|
OCR Scan
|
MT4C8512/3
350mW
024-cycle
MT4C8513
28-Pin
|
PDF
|
4C8512
Abstract: No abstract text available
Text: ADVANCE 512K M T4C 8 512/3 S W IDE DRAM X 8 512K x 8 DRAM WIDE DRAM EXTENDED REFRESH SELF REFRESH FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, tim ing, functions and packages • A ddress entry: ten row -addresses, nine colum naddresses
|
OCR Scan
|
MT4C8513
024-cycle
128ms
350mW
28-Pin
MT4C8512/3
4C8512
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY M T 4 C 8 5 1 2 /3 512 K X 8 W ID E D R A M |u iic n o N WIDE DRAM 512K x 8 DRAM FAST-PAGE-MODE FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-performance CMOS silicon-gate process
|
OCR Scan
|
350mW
11L-compatible
024-cycle
MT4C8513
28-Pin
MT4C8512/3
|
PDF
|
MT4C8512
Abstract: No abstract text available
Text: " j r ."' i 8 * 9 3 MT4C8512/3 512K x 8 WIDE DRAM MICRON B S tM lC O H O U C T O R INC WIDE DRAM 512K x 8 DRAM FAST-PAGE-MODE FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses
|
OCR Scan
|
MT4C8512/3
024-cycle
MT4C8513
C1993.
MT4C8512
|
PDF
|