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    T3329 Price and Stock

    Amphenol Sine Systems T-3329-501

    CONN PLUG MALE 4P SILV SLDR CUP
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    DigiKey T-3329-501 Bulk 50
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    • 100 $7.3114
    • 1000 $7.3114
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    Fix Supply ZUSA-HT-3329

    Viton Tubing - 3/16" ID x 7/16"
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ZUSA-HT-3329 Bulk 1
    • 1 $428.73
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    Brady Worldwide Inc DAT-33-292-10

    DAT-33-292-10
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    DigiKey DAT-33-292-10 Bulk 1
    • 1 $396.23
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    TE Connectivity MIL-LT-3-32-9-STK

    HEATSHRINK 0.093" X 4' WHITE
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    DigiKey MIL-LT-3-32-9-STK Bulk 5,000
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    • 10000 $0.15688
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    TE Connectivity VERSAFIT-3-32-9-SP

    HEATSHRINK 0.11" X 450M WHITE
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    DigiKey VERSAFIT-3-32-9-SP 450
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    VERSAFIT-3-32-9-SP 3
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    VERSAFIT-3-32-9-SP Bulk 1
    • 1 $0.72
    • 10 $0.72
    • 100 $0.4189
    • 1000 $0.4189
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    T3329 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    T3329501 Amphenol Circular Connectors, Connectors, Interconnects, CONN PLUG 4POS CABLE PIN Original PDF
    T 3329 501 Amphenol Sine Systems Connectors, Interconnects - Circular Connectors - Connector Plug Male DIN 4POS SLDR CUP Original PDF
    T3329502 Amphenol Circular Connectors, Connectors, Interconnects, CONN PLUG 4POS CABLE PIN Original PDF
    T 3329 502 Amphenol Sine Systems Connectors, Interconnects - Circular Connectors - Connector Plug Male DIN 4POS SLDR CUP Original PDF
    T 3329 504 Amphenol Sine Systems MALE CABLE CONNECTOR WITH INTERN Original PDF
    T 3329 518 Amphenol Sine Systems MALE CABLE CONNECTOR WITH INTERN Original PDF
    T 3329 528 Amphenol Sine Systems MALE CABLE CONNECTOR WITH INTERN Original PDF
    T 3329 548 Amphenol Sine Systems MALE CABLE CONNECTOR WITH INTERN Original PDF
    T3329551 Amphenol Circular Connectors - Housings, Connectors, Interconnects, CONN PLUG 4POS CABLE PIN CRIMP Original PDF
    T 3329 551 Amphenol Sine Systems Connectors, Interconnects - Circular Connectors - Housings - Connector Receptacle Housing Male 4 Position Inline Original PDF
    T3329552 Amphenol Circular Connectors - Housings, Connectors, Interconnects, CONN PLUG 4POS CABLE PIN CRIMP Original PDF
    T 3329 552 Amphenol Sine Systems Connectors, Interconnects - Circular Connectors - Housings - Connector Receptacle Housing Male 4 Position Inline Original PDF
    T 3329 554 Amphenol Sine Systems MALE CABLE CONNECTOR WITH INTERN Original PDF

    T3329 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD683A

    Abstract: 2SD683
    Text: TOSHIBA íDISCRETE/OPTO} 9097250 TOSHIBA Tb CD IS C R E T E / OPT O dT I t OITESO 0D077SD ^ 2SD683 .2SD683A, SILICON NPN TR IP LE DIFFUSED TYPE _ DARLINGTON POWER)_ INDUSTRIAL APPLICATIONS Unit in mm HIGH VOLTAGE AND HIGH POWER SWITCHING APPLICATIONS.


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    PDF 0D077SD 2SD683 2SD683A, 2SD683A) 2SD683 2SD683A

    c2689

    Abstract: C2689 equivalent automotive ignition tip162 T1P160 equivalent to tip162
    Text: TEXAS INSTR ÌOPTO> d ìT | 8961 72 6 TEXAS INSTR OPTO 003^.^30 62C 36938 TIPI 60, TIPI 61, TIPI 62 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V ISE D O C T O B E R 1 9 84 50 W at 100°C Case Temperature T-33-29 10 A Rated Continuous Collector Current


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    PDF T-33-29 TIP160, TIP161, TIP162 c2689 C2689 equivalent automotive ignition tip162 T1P160 equivalent to tip162

    2sd1087

    Abstract: No abstract text available
    Text: 5b ^ M r m í ^ E TE/0PT<>} 2SD1087 9097250 TOSHIBA <DISCRETE/OPTO DE I TCH7E5G ^ 56C 07 859 D T-33-29 SILICON NPN TRIPLE DIFFUSED TYPE _ DARLINGTON POWER)_ INDUSTRIAL APPLICATIONS •- • Unit in tnm 3 4.3 MAX HIGH CURRENT SUITCHItlG APPLICATIONS.


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    PDF 2SD1087 T-33-29 2sd1087

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA It { D I S C R E T E / OPTO} de T| TOT^SSO □007747 1 5òC 0 7 747 DISCRETE/OPTO T-33-29 SILICON NPN TRIPLE DIFFUSED TYPE _ (DARLINGTON POWER) U n it in mm HIGH POWER SWITCHING APPLICATIONS. FEA TU R ES: • High DC Current Gain : hFE=2000(Min.)(VCE=3V, IC=3A)


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    PDF T-33-29 -65VL50

    A04A ic

    Abstract: FE600 600V NPN 2A 2sd684a D1.5B IGNITER
    Text: ~5b TOSHIBA {DISCRETE/OPTO} Î Ë 1 SOTTESO 0D077S3 4 : 56C 077 S’3 9097250 TOSHIBA DISCRETE/OPTO 0r T-33-29 SILICON NPN TRIPLE DIFFUSED TYPE _ (DARLINGTON POWER) INDUSTRIAL A P P L I C A T I ^ in IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS.


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    PDF 0D077S3 T-33-29 A04A ic FE600 600V NPN 2A 2sd684a D1.5B IGNITER

    DOO1

    Abstract: 2SB997 2SB998 2SB999 2SD1357 2SD1358 2SD1359
    Text: TOSHIBA D eT J S O T T E S O {DISCRETE/OPTO> O O C m a b SILICON NPN TRIPLE DIFFUSED TYPE _ DARLINGTON POWER . r.-~ 9097250 TOSHIBA 56C CD ISCR ETE/O PTO ) T-33-29 0792ó INDUSTRIAL APPLICATIONS ' Unit in mm HIGH POWER SWITCHING APPLICATIONS. • '


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    PDF T-33-29 2SB997, 2SB998, 2SB999 2SD1357 2SD1358 2SD1359 DOO1 2SB997 2SB998 2SD1358 2SD1359

    3067

    Abstract: BD677A BD679A BD675A BD676A BD678A BD680A
    Text: P h ilip s S e m icon d u ctors Prelim inary sp ecification Silicon Darlington power transistors PHILIPS INTERNATIONAL D ESCRIPTION 711002b 004BT7S bBl WÊ PHIN r -3 3 -z * f Q U IC K R E F E R E N C E DATA NPN epitaxial base transistors in a monolithic Darlington circuit in a


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    PDF BD675A/BD677A/BD679A O-126 BD676A, BD678A BD680A 711002b 004BT7S BD675A BD677A 3067 BD677A BD679A BD675A BD676A

    LB 124 transistor

    Abstract: LB 124 d MPQ6427 transistor BC 236 16-SOIC 2N6427 MMBT6427
    Text: 2N6427/MMBT6427/MPQ6427 NATL SEMICOND OISCRETE 11E: D | k 501130 T-33-21 5 ^ N a tio n a l J l A S e m ic o n d u c to r 2N6427 E llllll Ull MMBT6427 MPQ6427* TO “ 236 S O T - 23 T O -9 2 ^ | C =E 10-116 TL/G/10100-7 TL/Q/10100-5 Bc TUG/10100-1 NPN Darlington Transistor


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    PDF bSD1130 00372b0 T-33-21 2N6427 MMBT6427 MPQ6427* to-236 sot-23) TL/G/10100-7 TL/Q/10100-5 LB 124 transistor LB 124 d MPQ6427 transistor BC 236 16-SOIC

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DIS CR ET E/ OPT O} 9097250 TOSHIBA Sb DIS CR E TE /O PT O Î>Ë~| ACHTESD DDG7ñbE T J 5 òC T-33-29 07862 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) _ INUÜbTKiAL APPLICATIONS IG N IT E R A P P L IC A T IO N S . Unit in mm


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    PDF T-33-29

    BUT35

    Abstract: transistors but35 CM4050
    Text: MOTO RO LA SC XSTRS/R F 12E D | b3L75S4 00840130 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 40 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 2 5 0 WATTS


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    PDF b3L75S4 T-35-1? BUT35 BUT35 transistors but35 CM4050

    WESTINGHOUSE DIODE

    Abstract: WT600 westinghouse transistors WT635-01D westcode sw Westcode T-635
    Text: 9709955 dESTCODE W ESTCODE S EM IC O N D U C TO R S _ 3 4 C T SEMICONDUCTORS m De J 01741 TTD'^ SS _D' T - 33-29 D0D1741 Technical WESTCODE SEMICONDUCTORS Publication WT600 Issue 1 December 1980 Discrete Power Darlington Transistor Types WT635-01 & WT635-02


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    PDF D0D1741 WT635-01 WT635-02 WT600 WT635-01D/-02D) T635-00D T635-00M 3-4-16U WESTINGHOUSE DIODE WT600 westinghouse transistors WT635-01D westcode sw Westcode T-635

    transistor BD 677

    Abstract: BD 675 BD675 677d
    Text: ES C T> m ÔEBSbOS 00043^5 b H S I E 6 NPN Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF Î5C °*395 T-33-29 ~ BD 675 BD 677 D BD 679 Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington


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    PDF T-33-29 BD679 a23SbOS 00043RS BD675, transistor BD 677 BD 675 BD675 677d

    Untitled

    Abstract: No abstract text available
    Text: 7^2^237 GG2R1S1 ö • V'33'Z^ SCS-THOMSON SGSD00055 IM 3DE D S G S-THOMSON HIGH VOLTAGE FAST SWITCHING NPN DARLINGTON ADVANCE DATA ■ ■ ■ ■ HIGH VOLTAGE HIGH GAIN FAST SWITCHING GOOD RBSOA IN TERN AL SC H EM A TIC DIAGRAM D ESCRIPTIO N The SGSD00055 is a silicon multiepitaxial planar


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    PDF SGSD00055 SGSD00055 O-220 200mA 300ns,

    Untitled

    Abstract: No abstract text available
    Text: • TqgqSB? D056M57 5 ■ " T '3 3>-Z.°\ f Z T SGS-THOMSON BDX33/33A/33B/33C ^ 7 # MÛi [i[Li©ir[B ô [MQ©S BDX34/34A/34B/34C 3GE D S G S-THOMSON HIGH GAIN GENERAL PURPOSE DESC RIPTIO N The BDX33, BDX33A, BDX33B and BDX33C are silicon epitaxial-base NPN transistors in monolithic


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    PDF BDX33/33A/33B/33C BDX34/34A/34B/34C BDX33, BDX33A, BDX33B BDX33C O-220 BDX34, BDX34A, BDX34B

    mj4030

    Abstract: No abstract text available
    Text: 7 ^ 5 3 7 QQgqob? a m 3 3 - 2P\ SCS-THOMSON H MJ4030/112 MJ4033/4/5 i S G S- TH O MS O N 3GE D GENERAL PURPOSE DESCRIPTION The MJ4030/31/32/33/34/35 are medium-power si­ licon NPN Darlington in Jedec TO-3 metal case, in­ tended for use in general purpose and amplifier ap­


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    PDF MJ4030/112 MJ4033/4/5 MJ4030/31/32/33/34/35 MJ4033/34/35 J4031 100mA mj4030

    Untitled

    Abstract: No abstract text available
    Text: 7=12=1237 002^201 T • T -3»3 -Z P \ SGS-THOMSON poæiItLgOTiMOi TIP140T/141T/142T TIP145T/146T/147T S 6 S-TH0MS0N 3DE » LOW VOLTAGE HIGH CURRENT POWER DARLINGTON ADVANCE DATA ■ MONOLITHIC DARLINGTON CONFIGURA­ TION ■ LOW VOLTAGE « HIGH CURRENT ■ HIGH GAIN


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    PDF TIP140T/141T/142T TIP145T/146T/147T TIP140T, TIP141T TIP142T T0-220 aretheTIP145T TIP146T andTIP147T

    silicon power 2GB

    Abstract: DG432
    Text: BDT63F; BDT63AF ^DTBSBF; BDT63CF 1 PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b Q 0 4 3 2 b b «îM *1 H P H I N T -3 3 -2 ^ SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a SOT186 envelope with an electrically insulated mounting


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    PDF BDT63F; BDT63AF BDT63CF OT186 T62BF T62CF. BDT63F OT186. BDT63AF silicon power 2GB DG432

    sc 6038

    Abstract: N6039 2N603 LT 7706 Motorola Mc 1461 to225aa 2N 6036 2N6037
    Text: MOTOROLA •SC XSTRS/R F 15E D I t3b75SM OOflMSflO Ì | T~33 ü j 2N602Ô thru MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP NPN 2N6034 2N6035 2N6036 2N6037 2N6038 2N6039 PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 4-AMPERE . . . designed for general-purpose amplifier and low-speed switching


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    PDF t3b75SM 2N602Ô 2N6034 2N6035 2N6036 2N6034, 2N6037 2N6035, 2N6038 2N6036, sc 6038 N6039 2N603 LT 7706 Motorola Mc 1461 to225aa 2N 6036 2N6037

    transistor 1BT

    Abstract: BDT62C PHILIPS npn 1bt BDT63B
    Text: BDT63; 63A BDT63B; 63C _ PHILIPS "INTERNATIONAL" StEB A • v _ 7110flEb 0043551, TTT - PHIN T - J J - Z 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general


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    PDF BDT63; BDT63B; 7110flEb T0-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 T-33-29 transistor 1BT BDT62C PHILIPS npn 1bt BDT63B

    bdt65b

    Abstract: No abstract text available
    Text: BDT65; 65A BDT65B; 65C V PHILIPS INTERNATIONAL SbE D • 7 1 I G Ö 5 L □ □ 4 3 2 ‘ia Ibfl « P H I N SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general purpose am plifier and switching applications. T 0-2 2 0 plastic envelope. PNP complements are


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    PDF BDT65; BDT65B; BDT64; BDT65 O-220. 7Z82329 bdt65b

    transistor kt 801

    Abstract: S/transistor kt 801 KT 802 transistor a05 801
    Text: SAMSUNG S E MI CONDUCTOR INC MJE800/801/802/803 IME O | 7^4145 000770b NPN EPITAXIAL r - 33 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hpE—750 @ lc= —1.5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complementary to MJE700/701/702/703


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    PDF MJE800/801/802/803 000770b O-126 MJE700/701/702/703 MJE800/801 MJE802/803 MJEo00/801 GQG77fe transistor kt 801 S/transistor kt 801 KT 802 transistor a05 801

    Untitled

    Abstract: No abstract text available
    Text: BEE D • flEBbBBG 0G17203 *\ «SIP NPN Silicon Darlington Transistors P ZTA 13; P Z TA 14 “ SIEMENS/ SPCL-i SEMICONDS • • • • For general A F applications High collector current High current gain Complementary types: PZ TA 63 / 64 PNP Type M arking


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    PDF 0G17203 Z2033 OT-223 Z2034 T-33-29 23b320 001720b PZTA13; PZTA14

    D40C2

    Abstract: No abstract text available
    Text: CENTRAL SEMICONDUCTOR fc,l D | nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C


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    PDF 2N5305 2N5306 2N5307 2N5308 GES5305 S5306 GES5306A GES5307 GES5308 GES5308A D40C2

    BUT35

    Abstract: THT bsc 25 transistors but35 ASX 12 D transistor CM4050
    Text: MO T O R O L A SC XST RS /R 12E D I b3b75S4 DDaMflbfl T | F MOTOROLA SEM ICON DUCTOR TECHNICAL DATA 40 AMPERES NPN SILICON POW ER DARLINGTON TRAN SISTO RS SW ITCHM ODE SER IES NPN SILICON POW ER DARLINGTON TRAN SISTO RS WITH BASE-EM ITTER SPEEDU P DIODE 1000 VOLTS


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    PDF b3b75S4 BUT35 BUT35 THT bsc 25 transistors but35 ASX 12 D transistor CM4050