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onsemi 2N6427 TRANS NPN DARL 40V 0.5A TO92
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DigiKey	2N6427	Bulk			5,000	1 - 10 - 100 - 1000 - 10000 $0.05834	Buy Now
NexGen Digital	2N6427		200			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	2N6427		199		1	1 $1 10 $1 100 $0.03 1000 $0.03 10000 $0.03	Buy Now
onsemi 2N6427G TRANS NPN DARL 40V 0.5A TO92
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DigiKey	2N6427G	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi 2N6427RLRA TRANS NPN DARL 40V 0.5A TO92
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DigiKey	2N6427RLRA	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.05184	Buy Now
onsemi 2N6427_D26Z TRANS NPN DARL 40V 1.2A TO92-3
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DigiKey	2N6427_D26Z	Reel			2,000	1 - 10 - 100 - 1000 - 10000 $0.03547	Buy Now
onsemi 2N6427RLRAG TRANS NPN DARL 40V 0.5A TO92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N6427RLRAG	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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2N6427 Datasheets (45)

Part	Manufacturer	Description	Datasheet Type	PDF
2N6427	Central Semiconductor	Leaded Small Signal Transistor Darlington	Original	PDF
2N6427	Central Semiconductor		Original	PDF
2N6427	Fairchild Semiconductor	NPN Darlington Transistor	Original	PDF
2N6427	Fairchild Semiconductor	NPN Darlington Transistor	Original	PDF
2N6427	Motorola	Bipolar Transistor, NPN Silicon Annular Darlington Transistor	Original	PDF
2N6427	On Semiconductor	TRANS DARLINGTON NPN 40V 0.5A 3TO-92	Original	PDF
2N6427	On Semiconductor	Darlington Transistors(NPN Silicon)	Original	PDF
2N6427	Philips Semiconductors	NPN Darlington transistor	Original	PDF
2N6427	Philips Semiconductors	Small-signal Transistors	Original	PDF
2N6427	Siemens	Cross Reference Guide 1998	Original	PDF
2N6427	Sinyork	Mini size of Discrete semiconductor elements	Original	PDF
2N6427	Central Semiconductor	SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY)	Scan	PDF
2N6427	Continental Device India	Semiconductor Device Data Book 1996	Scan	PDF
2N6427	Motorola	European Master Selection Guide 1986	Scan	PDF

2N6427	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N6427	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N6427	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N6427	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N6427	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N6427	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF

2N6427 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N6427 Abstract: 2N6426 Text: ON Semiconductort 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc	Original	PDF	2N6426* 2N6427 r14525 2N6426/D 2N6427 2N6426
2N6426G Abstract: 2N6427 2N6426 2N6426RLRA 2N6427RLRA 2N6427RLRAG 2n64 Text: 2N6426, 2N6427 Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available • Device Marking: Device Type, e.g., 2N6426, Date Code http://onsemi.com COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage	Original	PDF	2N6426* 2N6427 2N6426, 2N6426/D 2N6426G 2N6427 2N6426 2N6426RLRA 2N6427RLRA 2N6427RLRAG 2n64
2N6427 Abstract: CBVK741B019 F63TNR MMBT6427 MPSA14 PN2222N sot23 mark code e2 MPS-A14 Text: 2N6427 / MMBT6427 2N6427 MMBT6427 C E C B TO-92 B SOT-23 E Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.	Original	PDF	2N6427 MMBT6427 2N6427 OT-23 MPSA14 CBVK741B019 F63TNR MMBT6427 PN2222N sot23 mark code e2 MPS-A14
BC237 Abstract: 2n6426 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors 2N6426* 2N6427 NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 MAXIMUM RATINGS Symbol Value Unit Collector – Emitter Voltage Rating VCEO 40 Vdc Collector – Base Voltage	Original	PDF	2N6426* 2N6427 226AA) Juncti218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 2n6426 equivalent
Untitled Abstract: No abstract text available Text: Small Signal Darlington Transistors Part No. 2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64 MPSA65 20070515 Polarity NPN PNP VCEO hFE @ VCE & IC IC V (A) 20 30 30 40 20 30 30 30 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Min. Max. 7K 2K 7K 20K 20K	Original	PDF	2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64
2N6427 Abstract: BP317 npn darlington transistor 2n6427 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N6427 NPN Darlington transistor Product specification File under Discrete Semiconductors, SC04 1997 Jul 04 Philips Semiconductors Product specification NPN Darlington transistor 2N6427 FEATURES PINNING	Original	PDF	M3D186 2N6427 MAM252 SCA54 117047/00/01/pp8 2N6427 BP317 npn darlington transistor 2n6427
2N6427 Abstract: MMBT6427 MPSA14 Text: 2N6427 MMBT6427 C E C B TO-92 SOT-23 E B Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings*	Original	PDF	2N6427 MMBT6427 OT-23 MPSA14 2N6427 MMBT6427
bulk inner box label ST Abstract: No abstract text available Text: 2N6427 MMBT6427 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	PDF	2N6427 MMBT6427 2N6427 OT-23 MPSA14 bulk inner box label ST
2N6426 Abstract: 2N6427 2N6426G 2N6426RLRAG 2N6427G 2N6427RLRAG Text: 2N6426, 2N6427 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage	Original	PDF	2N6426, 2N6427 2N6426 2N6426/D 2N6427 2N6426G 2N6426RLRAG 2N6427G 2N6427RLRAG
2N6427 Abstract: No abstract text available Text: ON Semiconductort 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc	Original	PDF	2N6426* 2N6427 226AA) 2N6427
2N6426 Abstract: No abstract text available Text: 2N6426, 2N6427 Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available • Device Marking: Device Type, e.g., 2N6426, Date Code http://onsemi.com COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage	Original	PDF	2N6426* 2N6427 2N6426, 2N6426 2N6426G 2N6426RLRA 2N6427 2N6427RLRA 2N6427RLRAG BRD8011/D.
2n6426 Abstract: No abstract text available Text: 2N6426, 2N6427 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage	Original	PDF	2N6426, 2N6427 2N6426 2N6426/D
2N6426 Abstract: 2N6427 Text: 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc Collector Current — Continuous	Original	PDF	2N6426* 2N6427 226AA) r14525 2N6426/D 2N6426 2N6427
TRANSISTOR c 5578 B Abstract: 2N6427 2N6426 AN-41 AN-569 IC 2030 TRANSISTOR 5578 2902 transistor Text: 2N6426 2N6427 NPN SILICON ANNULAR+ DAR LINGTON TRANSISTORS . . . designed for use as high-gain amplifiers control . circuits; drivers Collector-Emitter BVCEO for displays, Breakdown = 40 Vdc Min ● DC Current ● Low Noise Figure — Gain specified ●	Original	PDF	2N6426 2N6427 AN-41 AN-569. TRANSISTOR c 5578 B 2N6427 2N6426 AN-569 IC 2030 TRANSISTOR 5578 2902 transistor

LB 124 transistor Abstract: LB 124 d MPQ6427 transistor BC 236 16-SOIC 2N6427 MMBT6427 Text: 2N6427/MMBT6427/MPQ6427 NATL SEMICOND OISCRETE 11E: D \| k 501130 T-33-21 5 ^ N a tio n a l J l A S e m ic o n d u c to r 2N6427 E llllll Ull MMBT6427 MPQ6427* TO “ 236 S O T - 23 T O -9 2 ^ \| C =E 10-116 TL/G/10100-7 TL/Q/10100-5 Bc TUG/10100-1 NPN Darlington Transistor	OCR Scan	PDF	bSD1130 00372b0 T-33-21 2N6427 MMBT6427 MPQ6427* to-236 sot-23) TL/G/10100-7 TL/Q/10100-5 LB 124 transistor LB 124 d MPQ6427 transistor BC 236 16-SOIC
2N6427 Abstract: MMBT6427 MPSA14 Text: N 2N6427 MMBT6427 Mark: 1V NPN Darlington Transistor T his device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Ratings* ta = 2 5 ° C unless o th e rw ise noted	OCR Scan	PDF	2N6427 MMBT6427 MPSA14 MMBT6427
2N6427 Abstract: MMBT6427 MPSA14 Text: 2N6427 I MMBT6427 Discrete POWER & Signal Technologies National S e m i c o n d u c t o r " MMBT6427 2N6427 SOT-23 B Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from	OCR Scan	PDF	2N6427 MMBT6427 OT-23 MPSA14 bSG113D 2N6427 MMBT6427
Untitled Abstract: No abstract text available Text: 2N6427 MMBT6427 SOT-23 M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum RâtinÇjS	OCR Scan	PDF	2N6427 MMBT6427 2N6427 OT-23 PSA14
2N6427 Abstract: MMBT6427 MPSA14 Text: N MMBT6427 2N6427 c TO-92 BE SOT-23 B M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Rstinys	OCR Scan	PDF	2N6427 MMBT6427 OT-23 MPSA14 2N6427 MMBT6427
LB 124 transistor Abstract: 2n6427 equivalent Text: SAMSUNG SEMICONDUCTOR INC 14E D l'7 1 b 4 1 43 □ O G 'ínO O 2N6427 DARLINGTON TRANSISTOR TO -92 • Collector-Emitter Voltage: V ceO=40V * Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic I NPN EPITAXIAL • SILICON DARLINGTON TRANSISTOR	OCR Scan	PDF	2N6427 625mW LB 124 transistor 2n6427 equivalent
D40K2 Abstract: T0202 2N7051 D40C7 2N7053 D40K4 2N5307 2N5308 2N6725 Text: bûE D w Devices V CE0 «ist 2N7051 •e PNP Min 1 20,000 1,000 2N7053 1 2N6725 1 Max 200 200 200 1A 1.5 200 0.2 200 25,000 200 1.0 200 2mA 100 4,000 40,000 500 1.5 1A 2mA 100 60,000 1 10,000 10,000 200 1,000 1.5A 0.3 2N5308 0.3 2N6427 1 200 1,000 1.5A 2,000	OCR Scan	PDF	2N7051 T0-92 2N7053 O-226 2N6725 T0-237 D40C7 T0-202 D40K2 D40K2 T0202 2N7051 D40C7 2N7053 D40K4 2N5307 2N5308 2N6725
Untitled Abstract: No abstract text available Text: N 2N6427 MMBT6427 Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings TA = 25°C unless otherwise noted	OCR Scan	PDF	2N6427 MMBT6427 MPSA14 2N6427
2N6427 Abstract: 2n6426 Text: 2N6426* 2N6427 M A X IM U M R A T IN G S Rating 2 Sym b o l Value Unit Collector-Emitter Voltage v CEO 40 Vdc Collector-Base Voltage V cBO 40 V dc Emitter-Base Voltage Vebo 12 V dc Collector Current — C o n tinu ous 'c 500 m A dc Total Device Dissip ation <a- T a = 25’C	OCR Scan	PDF	2N6426* 2N6427 O-226AA) 2N6426, 2N6427 2n6426
2n6427 Abstract: 2N6426 Text: 2N6426* 2N6427 M A X IM U M RATINGS Rating Symbol Value U n it v CEO 40 Vdc C ollector-Base V o ltage v CBO 40 Vdc Em itter-Base V o ltage v EBO 12 Vdc C o lle ctor-E m itter V o ltage CASE 29-04, STYLE 1 TO-92 TO-226AA C ollector C u rrent — C o ntinuous	OCR Scan	PDF	2N6426* 2N6427 O-226AA) 2N6426 2n6427

2N6427 Search Results

2N6427 Price and Stock

onsemi 2N6427

onsemi 2N6427G

onsemi 2N6427RLRA

onsemi 2N6427_D26Z

onsemi 2N6427RLRAG

2N6427 Datasheets (45)

2N6427 Datasheets Context Search

2N6427

2N6426G

2N6427

BC237

Untitled

2N6427

2N6427

bulk inner box label ST

2N6426

2N6427

2N6426

2n6426

2N6426

TRANSISTOR c 5578 B

LB 124 transistor

2N6427

2N6427

Untitled

2N6427

LB 124 transistor

D40K2

Untitled

2N6427

2n6427