t06 marking sot23
Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
Text: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W
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2PA1576Q
SC-70
BC808W
OT323
2PA1576R
BC808-16
2PA1576S
BC808-16W
t06 marking sot23
BC857 3ft
marking 6Ct SOT23
SOT89 marking cec
marking da sot89
MARKING BL SOT89
SOT23 "Marking Code" t04
SOT89 MARKING CODE
marking t04 sot23
marking 1G SOT23
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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T2T TRANSISTOR
Abstract: BFR591
Text: Philips Semiconductors bbS3^31 DD31T1E T2T • APX Preliminary specification NPN 8 GHz wideband transistor BFR591 N AMER PHILIPS/DISCRETE FEA TU R ES b'lE D ■ PINNING • High power gain PIN • Low noise figure 1 emitter • High transition frequency 2
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DD31T1E
BFR591
BFR591
MSB037
T2T TRANSISTOR
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TIP32 TI
Abstract: No abstract text available
Text: TIP32; A TIP32B; C J^ P H I L IP S INTERNATIONAL SbE D • 711DÛBb □GMBHTD T2T « P H I N T - 33-11 SILICON EPITAXIAL BASE POWER TRANSISTORS PNP transistors in a plastic T 0-22 0 envelope. They are intended for use in a wide range of power amplifiers and for switching applications. NPN complements are TIP31 series.
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TIP32;
TIP32B;
TIP31
TIP32
O-220.
TIP32B:
T-33-19
7110fl2b
00434Tb
TIP32 TI
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fmmta92
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 3 •JANUARY 1996 FMMTA92 FMMTA93 O_ P A R T M A R K IN G DETAILS: FMM TA92 - 4E FMM TA93 -2 E F M M T A 9 2 R - 8E F M M T A 9 3 R - 6E C O M P L E M E N T A R Y TY PE S: - FM M TA92 - FM M TA42
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FMMTA92
FMMTA93
FMMTA92R
FMMTA93R
FMMTA42
FMMTA43
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T2T TRANSISTOR
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Sm all-Signal Darlington Transistor BSP52T1 M otorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is
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BSP52T1
OT-223
BSP52T1
inch/1000
BSP52T3
inch/4000
b3b72S5
T2T TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 us pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness
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R02731B10W
0CH3CI54
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2SC4713K
Abstract: 2SC4774 T106 T146 T147
Text: h 7 > i / 7, £ /Transistors 2SC 4713K 2S C 4774 2SC4713K/2SC4774 Epitaxial Planar NPN Silicon Transistor raJS /R F Amplifier • ^M ^i& E I/D in ien sio n s Unit : mm 1) Ron 2) • Features 1) Very low output on-state resist ance. 2) Low capacitance.
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2SC4713K/2SC4774
2SC4713K
2SC4774
2SC4713K
SC-59
SC-70
100mVrms
2SC4774
T106
T146
T147
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K 3053 TRANSISTOR
Abstract: k 246 transistor
Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 p,s pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness
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R02731B10W
0CH3C54
K 3053 TRANSISTOR
k 246 transistor
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transistor marking t2T
Abstract: T2T TRANSISTOR ST4403
Text: Philips Semiconductors Product specification PNP switching transistor PMST4403 FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Switching and linear amplification. DESCRIPTION
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OT323
PMST4401.
PMST4403
PMST4403
ST4403
transistor marking t2T
T2T TRANSISTOR
ST4403
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NDB7052L
Abstract: NDP7052L
Text: %/ National Semiconductor~ A p r il 1 9 9 6 A D V A N C E IN F O R M A T IO N NDP7052L / NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode p o w e r fie ld effect transistors are produced using
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NDP7052L/
NDB7052L
bSD113D
NDP7052L
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON * 71. nn g^@l[LggirMnigi_SD1407 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • ■ ■ . ■ 30 MHz 28 VOLTS IMD -3 0 dB COMMON EMITTER GOLD METALLIZATION . P o u t = 125 W MIN. WITH 15 dB GAIN DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar
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SD1407
SD1407
DQ7G220
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ZTX704 ZTX705 ISSUE 3 - MAY 94_ FEATURES * 120 V olt VCE0 * 1 A m p continuous current * Gain o f 3K a t lc=1 Am p * Ptot=1 W att APPLICATIONS * Lamp, solenoid and relay drivers
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ZTX704
ZTX705
001G35S
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T0-126 pin configuration
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION SbE D 711DflSb GDMSTOL, RS3 H P H I N r-3 ?-n emitter collector base lo ' cm PIN CONFIGURATION July 1991 193 MAX. UNIT - 22 32 45 60 80 V
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O-126
BD434,
BD436,
BD438,
BD440
BD442
BD433/435/437/439/441
711DflSb
BD433
T0-126 pin configuration
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 339 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 339 b 11.5 A l/bs 500 V ^bsion Package Ordering Code 0.5 n TO-218 AA C67078-S3133-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values
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O-218
C67078-S3133-A2
235b05
O-218AA
A235bGS
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Untitled
Abstract: No abstract text available
Text: * 7/ SGS-THOMSON ilLiCTWDe STB5NA80 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STB5NA80 V dss RDS on Id 800 V < 2.4 Í2 4.7 A . . . . . . . TYPICAL RDs(on) =1.8 ft AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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STB5NA80
O-262)
O-263)
O-263
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NDS8934
Abstract: Scans-000
Text: Nat t onai Semiconductor " J u n e 19 96 NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDS8934
bS01130
Scans-000
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marking code p07 sot89
Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Text: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING
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2PA1576Q
2PA1576R
2PA1576S
2PA17
2PA1774R
2PA1774S
2PB709AQ
2PB709AR
2PB709AS
2PB710AQ
marking code p07 sot89
marking code 3Fp
P1M marking code sot 223
PDTC* MARKING CODE
p04 sot223
FtZ MARKING CODE
T07 marking
P2F SOT23
marking t04 sot23
marking code P1F
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Untitled
Abstract: No abstract text available
Text: TLP862JLP866 TLP867 INFRARED + PHOTO DARLINGTON TRANSISTOR TLP862 VCR, COMPACT DISC PLAYER COPYING MACHINE, FACSIMILE, PRINTER VENDING MACHINE, TICKETING MACHINE FOR VARIOUS POSITION DETECTION The TLP862, TLP866 and TLP867 are photo interrupters with an infrared LED and a high sensitivity
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TLP862JLP866
TLP867
TLP862)
TLP862,
TLP866
TLP867
TLP862
TLP866
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BUH313
Abstract: No abstract text available
Text: SGS-THOMSON IMDigæilLieîœiiMei BUH313 HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR . SG S-T H O M SO N P R E F E R R E D S A LE S T Y P E . HIGH V O LT A G E CAPABILITY • U.L. R E C O G N ISE D ISOWATT218 P A C K A G E U.L. FILE# E817 3 4 (N . APPLICATIONS:
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BUH313
ISOWATT218
E81734
5C05081
07fll00
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Tektronix 7603
Abstract: 109T2 43p transistor Tektronix 108T2 t2109 AL 108 transistor 7603 sonde de temperature
Text: *10 8 T2 *1 0 9 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA T R A N S IS T O R S N P N S IL IC IU M , M E S A D IF F U S E S ïfc Preferred device Dispositif recommandé • LF and HF large signal amplification Amplification BF ou H F grands signaux V v CEO
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CB-19
Tektronix 7603
109T2
43p transistor
Tektronix
108T2
t2109
AL 108 transistor
7603
sonde de temperature
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2C3303
Abstract: ca3725 6676 transistor transistor C200 2N6676 2CS9
Text: File Number 2N6676, 2N6677, 2N6678 HARRIS SEMICOND SECTOR 1165.1 M 3 0 S 2 7 1 D D 4 0 b 20 EfiM • HAS SbE D T ’3 3 ~ / 9 15-A Sw ItehM aX Power Transistors TERMINAL DESIGNATIONS High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications
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2N6676,
2N6677,
2N6678
2N6676
2N6677
2N6678
2N6676.
2C3303
ca3725
6676 transistor
transistor C200
2CS9
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY ADVANCE INFORMATION DS3638 • 2.0 Z N 4 1 4 Z & Z N 4 1 6 E AM RADIO RECEIVERS The ZN414Z is a 10 transistor tuned radio frequency TRF circuit packaged in a 3-pin TO-92 plastic package for simplicity and space economy. The circuit provides a complete R.F. amplifier, detector and
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DS3638
ZN414Z
ZN416E
ZN414Z
-30dB
37bfl522
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