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Catalog Datasheet	MFG & Type	PDF	Document Tags
t1p117 Abstract: T1P110 T1P111 T1P112 MJE3310 t1p115 MJE3311 MJE3300 D41K2 2N6548 Text: 1989963 CENTRAL SEMICONDUCTOR ; CENTRAL tï SEMICONDUCTOR 6 i r noi 94 T-/n_?q D Ë J n f i tn t 3 DGaaim b T i T -.-5 3 - 3 / T \3 3 - £ 3 POWER DARLINGTON TRANSISTORS EPOXY le = O P E R A T I N G A N D S T O R A G E T E M P E R A T U R E - 6 5 ° t o +150°C	OCR Scan	PDF	2N6548 2N6549 D40K1 D41K1 D40K2 D41K2 D40K3 D41K3 D40K4 D41K4 t1p117 T1P110 T1P111 T1P112 MJE3310 t1p115 MJE3311 MJE3300 2N6548
T1P110 Abstract: transistor tip 107 T1P111 T1P105 darlington npn tip 102 np112 VCS-60V T1P115 L08M darlington tip 102 Text: ¡ S A M S UN G S E M I C ON D U CT OR INC 14E D 1 7^1,4142 000772a fl PNP EPriAXIAT. SILICON DARLINGTON TRANSISTOR TIP105/106/107 r HIGH DC CURRENT GAIN ‘ MIN hFE=1000 @ V c e = —4 V, lc = -3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER	OCR Scan	PDF	TIP105/106/107 000772a TIP100/101/102 TIP105 TIP106 TIP107 T1P105 TIP115: T1P110 transistor tip 107 T1P111 T1P105 darlington npn tip 102 np112 VCS-60V T1P115 L08M darlington tip 102
T1P110 Abstract: transistor c 1971 transistor 1971 TJP112 T1P111 C 1971 transistor Text: nptio, HP111, TIP112 NPN SILICON POWER DARLINGTONS Copyright *81997, Povnar Innovations Limited, UK_ DECEMBER 1971 • REVISED MARCH 1907 • Designed tor Complementary Use with TIP115, TIP116 and TIP117 • 50 W at 25”C Case Temperature	OCR Scan	PDF	HP111, TIP112 TIP115, TIP116 TIP117 T0-220 T1P110 TIP111 TJP112 TIP110 transistor c 1971 transistor 1971 T1P111 C 1971 transistor
T1P112 Abstract: T1P111 Text: TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP 110, 111, 112 TIP 115,116,117 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Darlington Amplifier and Low Speed Switching Applications DIM A B C D E F G H J K L M N MIN MAX 16.51	OCR Scan	PDF	TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 23633T4 T1P112 T1P111
Untitled Abstract: No abstract text available Text: 1989963 CENTRAL CENTRAL 6i r S E M IC O N D U C TO R ; t ï SEMICONDUCTOR noi 94 T-/n_?q D Ë J n f i tn t 3 D G a a im b T POWER DARLINGTON TRANSISTORS EPOXY le = OPERATING AND STO RAGE TEM PE R A T U R E -6 5 °to +150°C 2 .0 A VCE(S) @ 1C fT Min (Typ)	OCR Scan	PDF	2N6548 2N6549 D40K1 D41K1 D40K2 D41K2 To-126 C1000SE3 O-105 O-106