Toshiba rdram
Abstract: TC59R1809
Text: TO S H IB A D IG IT A L IN TE G R A TE D CIRCUIT i N T t ^ K A t E D C IR C U IT T C 5 9 R 1 8 0 9 V K /H K TOSHIBA TFCHNICAL DATA SILICO N G> T E "C M O S TENTATIVE 2 ,0 9 7 ,152w ord x 9 - b i t Rambus DRAM INTRO DUCTIO N The TC59R1809VK/HK Rambus DRAM RDRAM is a next-generation*
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TC59R1809VK/HK
500MB/s.
32-pin
TC59R1809VK/H
SVP32-P-1125A)
TC59R1809VK/HKâ
Toshiba rdram
TC59R1809
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC551402T-20/25/30 4,194,304 WORD x 1 BIT/1,048,576 WORD x 4 BIT CMOS STATIC RAM Description The TC551402J is a 4,194,304 bit high speed CMOS static random access memory that is configurable to an organization of either 4,194,304 words by 1 bit or 1,048,576 words by 4 bits when power is initially applied to the device. The mode x1/x4 is
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TC551402T-20/25/30
TC551402J
B-150
T0T724fl
002b437
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Untitled
Abstract: No abstract text available
Text: TC554161FTI-85V/10V ; •p RAM TOSHIBA PRELIMINARY SILICON GATE CMOS 262,144 WORD x 16 BIT STATIC RAM Description TheTC554161FTI is a 4,194,304 bits static random access memory organized as 262,144 words by 16 bits using CMOS technology, and operated from a single 3.0 ~ 5.5V power supply. Advanced circuit techniques provide both high speed and
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TC554161FTI-85V/10V
TheTC554161FTI
10mA/MHz
TC554161FTI
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC554161FTI-85/10 PRELIMINARY SILICON GATE CMOS 262,144 WORD x 16 BIT STATIC RAM Description The TC554161FT1 is a 4,194,304 bits static random access memory organized as 262,144 words by 16 bits using CMOS technol ogy, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features
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TC554161FTI-85/10
TC554161FT1
10mA/MHz
200pA
TC554161FTI
SR04030295
TSOP54-P-400
62MAX
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A11RC
Abstract: No abstract text available
Text: TOSHIBA TC5116160AJ/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 16 bit. The TC5116160AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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TC5116160AJ/AFT-60/70/80
TC5116160AJ/AFT
00B5777
0D2577Ã
TC51161610AJ/AFT-60/70/80
0Q25771
TC5116160AÃ
A11RC
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Untitled
Abstract: No abstract text available
Text: TC59GJ632AFB-80,-10,-12 TOSHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT StU CbN ^pN bLIJH IC 262,144-WORDX 2-BANKX32-BIT SYNCHRONOUS GRAPHICS RAM DESCRIPTION The TC59G1632AFB is a CM OS synchronous graphics random access memory or& ajiize^a* 262.144
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TC59GJ632AFB-80
144-WORDX
2-BANKX32-BIT
TC59G1632AFB
32-bit.
Fiaure29
0Q31fcÂ
TC59G1632AFB-80
TQFP100-P-1420-0
OJ75TYP
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THM368020S/SG-60/70 8,388,608 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM368020 is a 8,388,608 word by 36 bit dynamic RAM module which is assembled with 16 TC5117400J devices and 8 TC514100ASJ devices on the printed circuit board. The THM368020 can be used
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THM368020S/SG-60/70
THM368020
TC5117400J
TC514100ASJ
THM368020S/SG
368020SG
368020S
DD25T51
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC514900AJ/AFT-70/80 524,288 WORD X 9 BIT DYNAMIC RAM DESCRIPTION The TC514900AJ/AFT is the new generation dynamic RAM organized 524,288 word by 9 bit. The TC514900AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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TC514900AJ/AFT-70/80
TC514900AJ/AFT
T0T724fl
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Untitled
Abstract: No abstract text available
Text: m 'iD,i754fi DD2fi73C1 C141 m- TOSHIBA TC59R0808HK PRELIMINARY 1,048,576 WORD x 8 BITS RAMBUS DYNAMIC RAM Description The TC59R0808HK Rambus Dynamic RAM DRAM is a next-generation high-speed CMOS DRAM with a 1,048,576 x 8 bits organization and built-in slave logic. The 16,384 sense amps of the DRAM core are used as cache to achieve data
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TC59R0808HK
TC59R0808HK
500MB/s.
RD0S010496
SHP36-P-1125)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC55V1325FF-8/10/12 PRELIMINARY 32,768 WORD x 32 BIT SYNCHRONOUS PIPELINE BURST SRAM Description The TC55V1325FF is a 1,048,576 bit synchronously pipelined burst SRAM that is organized as 32,768 words by 32 bits and designed for use in a secondary cache to support MPUs which have burst functions.
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TC55V1325FF-8/10/12
TC55V1325FF
SR01021095
TGT724Ã
LQFP100-
P-1420)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551664AJ-15/20 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC551664AJ is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide high
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TC551664AJ-15/20
TC551664AJ
SR01030895
GD26D7S
SOJ44-P-400)
t1724fl
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUIT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TOSHIBA TECHNICAL TC74LCX16652FT DATA SILICON MONOLITHIC TENTATIVE DATA L O W VOLTAGE 16BIT BUS TRANSCEIVER / REGISTER W ITH 5V TOLERANT INPUTS A N D OUTPUTS T h e T C 7 4 L C X 1 6 6 5 2 F T is a h ig h p a rfo rm a n c e C M O S 1 6 b it
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TC74LCX16652FT
16BIT
002bfi41
TC74LC
X16652FT
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC5164 5 165AFT/AFTS-40.-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 ,1 94,304-WORD X 16-BIT EDO {HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)165AFT/AFTS is an EDO (hyper page) dynamic RAM organized as 4,194,304 words by 16
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TC5164
165AFT/AFTS-40
304-WORD
16-BIT
165AFT/AFTS
165AFT/AJTS
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