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IC 2864 eeprom Abstract: 2764 EEPROM DS1225-200 EEPROM 2864 2764 eprom PINOUT ram DS1225 ds1225 DS1225-100 2864 eeprom EEPROM 2864 CMOS Text: DALLAS SEMICONDUCTOR CORP 3=iE D at.14130 0003364 4 Hi DAL DS1225AB/AD ' 'C ^ i b 3 7 DS1225AB/AD D A LLA S 64K Nonvolatile SRAM SEM ICONDUCTOR FEATURES A PIN DESCRIPTION • Data retention in the absence of Vco • Data Is automatically protected during power	OCR Scan	PDF	DS1225AB/AD 28-pln 100ns, 120ns, 150ns, 170ns, 200ns DS1225 IC 2864 eeprom 2764 EEPROM DS1225-200 EEPROM 2864 2764 eprom PINOUT ram DS1225 DS1225-100 2864 eeprom EEPROM 2864 CMOS
d2764c Abstract: MK48Z12B-20 IMS1630 MK48Z02BU-25 VQC10 M27512F1 UPD27128D M2716F1 thomson RT 463 Schematic STR S6706 Text: m e m o r y pr o d u c ts databook SGS-THOMSON ® ® H lL Ig ? [§ © R IO (g i MEMORY PRODUCTS DATABOOK 1st E D IT IO N JUNE 1988 USE IN LIFE SUPPORT MUST BE EXPRESSLY AUTHORIZED SGS-THOM SON’ PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT	OCR Scan	PDF	Z8000 d2764c MK48Z12B-20 IMS1630 MK48Z02BU-25 VQC10 M27512F1 UPD27128D M2716F1 thomson RT 463 Schematic STR S6706
BT808 Abstract: Q2006L5 Triac SC141D TFK 609 TO810MH triac tic236m Q2006R5 Q4025V5 Q6040 T0505NH Text: LORAS INDUSTRIES INC 42E D 5500440 DOOOODt. T IL O R A “T - 2 5 ' O Î TRIAC ITrms PART No. VDRM Volts PACKAGE Amps IDRM mAmps IGT Q2 Q3 mAmps Q1 VGT Volts Q4 Ih mAmps VTM Volts ITM Amps 0.6 Amps ITrms T O -92 Package MAC974 0.6 0.6 MAC976 MACÔ7& 0.6: MAC97A3 "•	OCR Scan	PDF	-T-25-0Ã MAC974 MAC976 MAC97AÂ MAC97A6 MAC97A8 SC92B T0218AC BTB41200B BT808 Q2006L5 Triac SC141D TFK 609 TO810MH triac tic236m Q2006R5 Q4025V5 Q6040 T0505NH
TIC2360 Abstract: 8ta12 SC160D TLC226B TO505mh Q2006L5 SC160M 04004f41 C245B Q6040 Text: LO R A S I N D U S T R I E S INC M2E D • 5SflQ44ö G D G G O D b T ■ LORA “T -2 5 'O Í TRIAC o Q1 Ol VDRM IDRM Volts mAmps col PACKAGE OJ O ITrms Amps PART No. mAmps VGT Volts Ih mAmps VTM Volts ITM Amps 0.6 Amps ITrms TO—92 Package MAC974 MAC976	OCR Scan	PDF	5SflQ44Ã MAC974 MAC976 MAC978 MAC97A6 MAC97A8 SC92B O-218AC BTB41200A T0218AC TIC2360 8ta12 SC160D TLC226B TO505mh Q2006L5 SC160M 04004f41 C245B Q6040
Untitled Abstract: No abstract text available Text: 4.0 Electrical and Mechanical Specifications This chapter discusses the electrical specifications of the Bt8222, such as power requirements, temperature ranges, DC characteristics and timing. A mechanical drawing and pinout with pin descriptions are included.	OCR Scan	PDF	Bt8222, Bt8222 160-pin N8222DSF Bt8222
t0dv Abstract: No abstract text available Text: E FM25160FRAM Serial Memory r ^ M T R O N Product Preview* Features • 16Kbit Nonvolatile Ferroelectric RAM Organized as 2,048 x f ■ Low Power CMOS Technology - lOpA Standby Over Industrial Temperature Range -5\|iA Standby Over Commercial Temperature Range	OCR Scan	PDF	FM25160FRAMÂ 16Kbit 000Vo FM25160 --------------------16K t0dv