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    T 2.5A 250V Search Results

    T 2.5A 250V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RQK2501YGDQA#H1 Renesas Electronics Corporation Nch Single Power Mosfet 250V 0.4A 5400Mohm Mpak/Sc-59 Visit Renesas Electronics Corporation
    HAT2089R-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 2A 600Mohm Sop8 Visit Renesas Electronics Corporation
    H5N2508DL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 7A 630Mohm DPAK(L)-(2)/To-251 Visit Renesas Electronics Corporation
    2SK1761-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 12A 350Mohm To-220Ab Visit Renesas Electronics Corporation
    H5N2505DSTL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 5A 890Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
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    T 2.5A 250V Price and Stock

    SPC Multicomp MST 2.5A 250V

    Fuse, Pcb, 2.5A, 250V, Slow Blow; Fuse Current:2.5A; Voltage Rating Vac:250Vac; Product Range:-; Voltage Rating Vdc:-; Blow Characteristic:Slow Blow; Fuse Case Style:Radial Leaded; Breaking Capacity Current Ac:100A; Lead Length:22Mm Rohs Compliant: Yes |Multicomp Pro MST 2.5A 250V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MST 2.5A 250V Bulk 4,428 1
    • 1 $0.239
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    SPC Multicomp MCMET 2.5A 250V

    Fuse, Pcb, 2.5A, 250V, Slow Blow; Fuse Current:2.5A; Voltage Rating Vac:250Vac; Product Range:-; Voltage Rating Vdc:-; Blow Characteristic:Slow Blow; Fuse Case Style:Radial Leaded; Breaking Capacity Current Ac:35A; Diameter:8.35Mm Rohs Compliant: Yes |Multicomp Pro MCMET 2.5A 250V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MCMET 2.5A 250V Bulk 2,951 10
    • 1 $0.231
    • 10 $0.231
    • 100 $0.231
    • 1000 $0.14
    • 10000 $0.126
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    Signetics MST T2.5A/250V

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    Bristol Electronics MST T2.5A/250V 65
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    BUSS ETFT2.5A250V

    Electronic Component
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    ComSIT USA ETFT2.5A250V 792
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    Eaton Bussmann ETFT2.5A250VIEC127-3

    Electronic Component
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    ComSIT USA ETFT2.5A250VIEC127-3 501
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    T 2.5A 250V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFU421

    Abstract: No abstract text available
    Text: IRFR420, IRFR421, IRFR422, IRFU420, IRFU421, IRFU422 S E M I C O N D U C T O R 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.2A and 2.5A, 450V and 500V These are N-Channel enhancement mode silicon gate


    Original     		PDF IRFR420, IRFR421, IRFR422, IRFU420, IRFU421, IRFU422 TA17405. IRFU421

    IRF822

    Abstract: IRF820 IRF821 IRF823 TB334 IRF823 harris
    Text: IRF820, IRF821, IRF822, IRF823 S E M I C O N D U C T O R 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 2.2A and 2.5A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF820, IRF821, IRF822, IRF823 IRF822 IRF820 IRF821 IRF823 TB334 IRF823 harris

    Untitled

    Abstract: No abstract text available
    Text: IRF420, IRF421, IRF422, IRF423 S E M I C O N D U C T O R 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.2A and 2.5A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF420, IRF421, IRF422, IRF423 TA17405.

    Untitled

    Abstract: No abstract text available
    Text: 254G3 CONNECTOR SYSTEM .10” 2.54mm pitch wire(board)-to-board 254G3-(1,2)H SERIES HOUSING MATERIAL : PBT+30% GF UL 94V-0 ACCPT 254G3-T TERMINAL MATE WITH 254G3 SERIES PIN HEADER CURRENT RATING : 2.5A AC,DC VOLTAGE RATING : 250V AC,DC CONTACT RESISTANCE : 30mŸ MAX


    Original     		PDF 254G3 254G3- 254G3-T 1000M 254G3-GT 254G3-1H 254G3-2H

    Untitled

    Abstract: No abstract text available
    Text: RK Crimp Terminal * Material : Brass or Phosphor bronze * Current rating : 2.5A, AC/DC * Voltage rating : 250V, AC/DC * Applicable wire AWG #26- #22 B .075 1.90 .063 1.60 A A B .079 2.00 .091 2.30 .024 0.60 .079 2.00 .118 3.00 .051 1.30 B-B .138 3.50 RK-T-22


    Original     		PDF RK-T-22

    IRF822

    Abstract: irf820
    Text: IRF820, IRF821, IRF822, IRF823 HARRIS S E M I C O N D U C T O R 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 2.2 A and 2.5A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRF820, IRF821, IRF822, IRF823 TA17405. RF822, RF823 IRF822 irf820

    F421

    Abstract: IRF423
    Text: iH A R R is IRF420, IRF421, IFJF422 IF^F423 s e m i c o n d u c t o r 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.2 A and 2.5A, 450V and 500V • Majority Carrier Device These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF420, IRF421, TA17405. IFJF422 RF422, RF423 F421 IRF423

    800V PNP

    Abstract: pnp 1500v 8a BUX88 BU508AF PHILIPS SEMICONDUCTOR pnp 1200V 2A high voltage pnp transistor 700v pnp transistor 800v BU508DF BU603 PNP 300V
    Text: N AMER PHILIPS/DISCRETE 44 2SE T> m ^>[=53=131 ÛQlbES2 T • T-33-Í?/ Power Devices VERY HIGH VOLTAGE TRANSISTORS in order of current rating TYPE NO. PACKAGE OUTLINE ,C(DC)0) VCES BU505 TO-220AB 2.5A BU506 TO-220AB 3A BU506D TO-220AB 3A SOT-93A 3A BU706


    OCR Scan     		PDF T-33-Ã BU505 O-220AB BU506 BU506D BU706 OT-93A BU706D 800V PNP pnp 1500v 8a BUX88 BU508AF PHILIPS SEMICONDUCTOR pnp 1200V 2A high voltage pnp transistor 700v pnp transistor 800v BU508DF BU603 PNP 300V

    Untitled

    Abstract: No abstract text available
    Text: 3.3 Dia. 1 6.5 9.5 WT VI X T T4.0 '- 1.5x2.3L 2.5 - 11. □ i— 1 .1 PCB LAYOUT CUT-OUT Revision Rev. Description Date Approved £ k2 Dia. Material: H ousing: T h e rm o p la stic T erm inal: C opper Alloy C h a ra c te ris tic s : R ating: 2.5A 250V AC


    OCR Scan     		PDF 500VDC JJH/03â

    Untitled

    Abstract: No abstract text available
    Text: N A PIER PHILIPS/DISCRETE 2SE D • fabS3131 0Qlb222 T ■ T-33-*?/ Power Devices VERY HIGH VOLTAGE TRANSISTORS in order of current rating T Y P E NO. PACKAGE O U T L IN E lc(DC)CI) VCES . V CEO V CE(sat) MAX. at lc BU 505 T O -220AB 2.5A 1500V 700V 5 V a t2 A


    OCR Scan     		PDF fabS3131 0Qlb222 T-33-* -220AB O-220AB -220A OT-93A OT-93

    diode 400V 4A

    Abstract: DIODE 3A 1000V BUT21A 1000v 3a diode ESM3045AV BUX86 Diode 400V 5A ESM5045DV diode 400V 6A ESM3045DV
    Text: N AMER PH ILIPS/ DIS CRETE 42 SSE D • ^53131 001^220 b ■ T~32-0l Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating TYPE NO. BU826 BU826A PACKAGE OUTLINE *C(DC)(tJ SOT-93 V CE(*at) MAX. a t lc tf MAX a t lc 375V 400V 2V at 2.5A


    OCR Scan     		PDF BU826 BU826A OT-93 BUV90 BUV90F OT-199 ESM3045AV ESM3045DV OT-227B2 diode 400V 4A DIODE 3A 1000V BUT21A 1000v 3a diode BUX86 Diode 400V 5A ESM5045DV diode 400V 6A

    MCG15R

    Abstract: MCG03R 4572 8pin
    Text: , I I File N o.I A I IS H E E T 030 1 /1 SPECIFICATIONS Current Rating: 2.5A AC,DC Material: PBT UL 94V-0,Black Voltage Rating: 250V AC,DC Temperature Range: — 25’C ~ + 8 5 ‘C Insulation Resistance: 1000 Megohms Min. Withstand Voltage: 800V AC/Minute


    OCR Scan     		PDF MCG02R MCG03R MCG04R MCG05R MCG06R MCG07R MCG08R MCG09R MCG10R MCG11R MCG15R 4572 8pin

    PJ-102B

    Abstract: Jack 0.8 center pin pj 899
    Text: -14.5 [0.571] 13.7 [0.539]- 3.5 [0.138] — TERMINAL 10.7 [0.421]— • NUMBER' 7.7 [0.303] 3 QO o <T> r- S \ 0.8 [0.031]- 10.7 [0.421] -I P C B LAYOUT TOP VIEW SPECIFICATIONS: RATING: 16V DC 0 2.5A CONTACT RESISTANCE: 30m OHMS MAX INSULATION RESISTANCE:


    OCR Scan     		PDF PJ-102B PJ-102B 07OO5 S43-4B9Q aoo-275-4r8ee Jack 0.8 center pin pj 899

    TL 1838

    Abstract: Neutron sensitive PIN diode
    Text: H A R R IS S E M I C O N D U C T O R FRX234D, FRX234R FRj 234H Radiation Hardened N-Channel Power MOSFETs June 1994 Package Features • 2.5A, 250V, RDS(on) = 0.7000 LCC 18 PIN • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma


    OCR Scan     		PDF FRX234D, FRX234R 100KRAD 300KRAD 1000KRAD 3000KRAD to1E14 35MeV/mg/ cm227 00S74L1 TL 1838 Neutron sensitive PIN diode

    C459

    Abstract: TDC459 c-459 TS-20-10-C459
    Text: HIGH BREAKING CAPACITY, CERAMIC CARTRIDGE, TIME LAG New Document Number TS-20-10-C459 T SILVERED CAPS TDC459 I Sheet 1 of 1 SPECIF CATION ALL DIMENSION IN MILLIMETRES + Rated Current Maximum mV drop @ In 1A 1.25A 1.6A 2A 2.5A 3.15A 4A 5A 6.3A 8A 10A 350 300


    OCR Scan     		PDF TS-20-10-C459 TDC459 200mS A-10A 150mS 100mS C459 c-459 TS-20-10-C459

    Untitled

    Abstract: No abstract text available
    Text: C2528 Series 2.50m m p i t c h wire to b o a r d c o n n e c t o r gp^ 15.3 REF. A s s e m b l y L ay o u t Specifications: P oles 2 ~ 25 Poles P it c h b e tw e e n poles 2.50m m R a te d Voltage 250V AC,DC R a te d C u rre n t 2.5A (AWG # 2 2 W ithstand Voltage


    OCR Scan     		PDF C2528 C2523WV2â

    T10H 250V

    Abstract: 2N5877 equivalent tektronix 475 2N6406 2N6408 2N5877 npn 10a 800v 2N5875 BUX82 IN4933
    Text: BUX82 POWER TRANSISTORS 6A, 800V, Fast Switching, Silicon NPN Mesa FEATURES DESCRIPTION • Collector-Base Voltage: up to 800V • Peak Collector Current: 10A • On Time: < 500nS @ 2.5A These high voltage glass passivated power tra n sisto rs c o m b in e fa s t sw itching, low


    OCR Scan     		PDF BUX82 500nS 180/tH 500kHz 1N5820 T10H 250V 2N5877 equivalent tektronix 475 2N6406 2N6408 2N5877 npn 10a 800v 2N5875 BUX82 IN4933

    FET IRF 540

    Abstract: diode lt 823
    Text: • ^DES?! 0DS40b3 HARRIS 741 ■ has IRF820/821/822/823 IRF82OR/821R/822R/823R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Featu res P ack ag e T O -2 2 0 A B • 2.2 and 2.5A, 450V - 500V T O P VIEW • rDS °n = 3-oii and 4.0il • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF 0DS40b3 IRF820/821/822/823 IRF82OR/821R/822R/823R IRF820, IRF821, IRF822, IRF823 IRF820R, IRF821R, IRF822R FET IRF 540 diode lt 823

    pj 899

    Abstract: 003A PJ-003A DC Power Jack
    Text: MODEL ND. PJ- 003A c SCHEMATIC 3-01 r- o3 / v J - o2 CENTER PIN DIAMETER 2.0MM DIA. PC FILE NAME; PJ-Q03A.DWG [c o p y r ig h t 1997 BY CUI INC PCB LAYOUT TOP VIEW SPECIFICATIONS: RATING: 16V DC @ 2.5A CONTACT RESISTANCE: 30m OHMS MAX INSULATION RESISTANCE:


    OCR Scan     		PDF PJ-003A PJ-Q03A 07OO5 pj 899 003A PJ-003A DC Power Jack

    IEC 60320 C5

    Abstract: lter N17352
    Text: LIVE BROWN LIVE(BROWN) NEUTRAL(BLUE) NEUTRAL(BLUE) VLX VAC5S XXX 2.5A 250V- N17352 IEC 60320 C-5 M A R K T N fi fflü TA TT.S l V D LE X R E S E R V E S THE RIGHT TO A LTER NDN-CRITICAL DIMENSIONS WITHDUT NOTICE. PLUG TYPE: AS/NZS 3112 WITH INSULATED BLADES


    OCR Scan     		PDF N17352 AMP/250 IN71-07 VC-1434-21-180 IEC 60320 C5 lter

    1rf830

    Abstract: 1rf840 RF822 IRFB40R IRF820R IRF830R J50 mosfet IRFS30 RF842 IRF820
    Text: HLAJRRIS IRF820/82 i/822/823 IRF820R/821R/822R/823R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Fea tu res Package T 0 -2 2 0 A B TOP VIEW • 2.2 and 2.5A, 450V - 500V • f D S !0 0 = 3 -0 i l an d DRAIN FLAN GE) • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRFQ20/Q21/822/823 IRF820R/821R/822R/823R IRF820, RF821, 1RF822, IRF823 IRF820R, IRF821R, IRF822R IRF823R 1rf830 1rf840 RF822 IRFB40R IRF820R IRF830R J50 mosfet IRFS30 RF842 IRF820

    Untitled

    Abstract: No abstract text available
    Text: 1 I I IBI 6 I I I File No. I 4 0 5 I SHEET 1 /1 Features : . Available in 2—12 circuits . UL94V-0, Nylon 66 . 250V AC/DC, 2.5A 1.60—H 1.00 H o o a: o in V 3.70 |— O 1*0 2.10— 2 .9 0 - 1 JI— f— CO o /////a //////////////T z \ / y/A - 4 .6 0 - I—0.80


    OCR Scan     		PDF UL94V-0, Circ00

    JRF820

    Abstract: F820R
    Text: 2 3 H A R R IS IR F 820/ 821/ 822/823 IR F 820 R /8 2 1R /822 R /823 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Features Package T O -2 2 0 A B TOP VIEW • 2 .2 and 2.5A , 4 5 0 V - 5 0 0 V • rD S ° n = 3.on and 4 .0 ÎÎ DRAIN


    OCR Scan     		PDF IRF820, IRF821, IRF822, IRF823 IRF820R, IRF821R, IRF822R IRF823R JRF820 F820R

    Untitled

    Abstract: No abstract text available
    Text: IIC Connectors Ib IBULGIN EN60 320-1 Standard Sheet C8 Class II Cold Condition Flange Panel Mount Inlet 15.5 Figure of Eight 2.8m m Solder Tabs Connectors 2.5A, 250V a.c. Snap Fit to Panel Inlet Figure of Eight 15.5 Fits Panel sizes 1, 1.5 or 2mm 21.3 23.70


    OCR Scan     		PDF PX0784/28 PX0785/28 PX0786/PC