switching transistor
Abstract: No abstract text available
Text: SWITCHING LOSS VS. COLLECTOR CURRENT TYPICAL SWITCHING LOSS, ESW(on), ESW(off), (J/PULSE) 7 VCC = 2250V VGE = 15V Tj = 125°C RG = 10Ω LS = 180nH ESW(on) ESW(off) 6 5 4 Inductive Load 3 2 1 300 600 900 1200 1500 1800 COLLECTOR CURRENT, IC, (AMPERES)
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180nH
switching transistor
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TIP142 Application Note
Abstract: TIP147 Application Note 300 watts amplifier schematics tip142/TIP147 AMPLIFIER CIRCUIT darlington TIP142 power amplifier TIP141 TIP142 TIP145 TIP142 TIP147 1N5825
Text: ON Semiconductort NPN TIP140 TIP141* Darlington Complementary Silicon Power Transistors TIP142 * . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V PNP
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TIP140
TIP141*
TIP142
TIP145
TIP146
TIP147
TIP140,
TIP141,
TIP142 Application Note
TIP147 Application Note
300 watts amplifier schematics
tip142/TIP147 AMPLIFIER CIRCUIT
darlington TIP142 power amplifier
TIP141
TIP142
TIP145
TIP142 TIP147
1N5825
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tip142/TIP147 AMPLIFIER CIRCUIT
Abstract: MPS-U52 TIP142 Application Note TIP140/D tip142/147 tip141 equivalent 1N5825 MSD6100 TIP140 TIP141
Text: ON Semiconductort NPN TIP140 TIP141* Darlington Complementary Silicon Power Transistors TIP142 * . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V PNP
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TIP140
TIP141*
TIP142
TIP145
TIP146
TIP147
TIP140,
TIP141,
tip142/TIP147 AMPLIFIER CIRCUIT
MPS-U52
TIP142 Application Note
TIP140/D
tip142/147
tip141 equivalent
1N5825
MSD6100
TIP140
TIP141
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TIP140
Abstract: tip142 TIP141 transistor tip142 MPS-U52 pnp resistor darlington TIP142 power amplifier tip142/TIP147 AMPLIFIER CIRCUIT
Text: ON Semiconductort NPN TIP140 TIP141* Darlington Complementary Silicon Power Transistors . . . designed for general−purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V TIP142 * PNP
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TIP140
TIP141*
TIP142
TIP145
TIP146
TIP147
TIP141
TIP142
transistor tip142
MPS-U52
pnp resistor
darlington TIP142 power amplifier
tip142/TIP147 AMPLIFIER CIRCUIT
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TIP142 TRANSISTOR REPLACEMENT
Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V
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TIP140,
TIP145
TIP141,
TIP146
TIP142,
TIP147
TIP73B
TIP74
TIP74A
TIP74B
TIP142 TRANSISTOR REPLACEMENT
replacement for TIP147
high end amplifier schematics 2n3055
pin configuration NPN transistor tip41c
BDW51C schematics
TIP142 TIP147
BD262 DARLINGTON
2N6022
BU108
transistor tip142
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JE521
Abstract: JE521G MJE521 MJE371 MJE521G mje521 npn
Text: MJE521 Plastic Medium−Power NPN Silicon Transistor These devices are designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry. Features • DC Current Gain − hFE = 40 Min @ IC
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MJE521
MJE371
JE521
JE521G
MJE521
MJE371
MJE521G
mje521 npn
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JE371
Abstract: JE371G MJE371 MJE-371 MJE371G MJE521
Text: MJE371 Plastic Medium−Power PNP Silicon Transistor This device is designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry. Features • DC Current Gain − hFE = 40 Min @ IC
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MJE371
MJE371
MJE521
JE371
JE371G
MJE-371
MJE371G
MJE521
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DX2-12V
Abstract: DX2-L2-12V Matsushita Miniature Relay s3 12v DX2-24V ujt free MATSUA DX2 151 VARISTOR relay Dx2 relay 24v DC-13 Matsushita dx2 Relay Technical Information
Text: DX HERMETIC SEAL ULTRA SMALL RELAY WITH T0-5 SENSITIVITY AND RF SWITCHING CAPABILITY 20.0 .787 DX-RELAYS • High radio frequency characteristics - isolation loss: 40 dB at 300 MHz • Latching types available • High sensitivity to be IC drivable: 60 mW pick-up only
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IRL3102
Abstract: IRL3303 LX1662 LX1662A LX1662ACN LX1662CN LX1663 LX1663A 74C9 ic for driver fet class d 14 pin
Text: L I N D O C # : 1662 LX1662/62A, LX1663/63A SINGLE-CHIP PROGRAMMABLE PWM CONTROLLERS WITH 5-BIT DAC T I H E P N F I N I T E O W E R O F I P N N O VA T I O N D R O D U C T I O N DESCRIPTION The LX1662/62A and LX1663/63A are Monolithic Switching Regulator Controller IC’s designed to provide a low cost,
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LX1662/62A,
LX1663/63A
LX1662/62A
LX1663/63A
LX1662A
LX1663A
IRL3102
IRL3303
LX1662
LX1662ACN
LX1662CN
LX1663
74C9
ic for driver fet class d 14 pin
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3000 watt ups circuit diagram
Abstract: IC tc 2608 TC 2608 3000 watt inverter circuit diagram MG400Q2YS60A 3000 watt inverter
Text: MG400Q2YS60A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD Compact IGBT Series Module 400 Amperes/1200 Volts A D L J K W N M V E2 C1 C H B DETAIL "A" F E C2E1 U W R R T S Z Q P Y X X Q G C1 7 5 5 6 AA
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MG400Q2YS60A
Amperes/1200
3000 watt ups circuit diagram
IC tc 2608
TC 2608
3000 watt inverter circuit diagram
MG400Q2YS60A
3000 watt inverter
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igbt 1500A
Abstract: igbt module 1500A transistor MJ 13003 CM1500HC-66R CM1500HC Powerex 1800V CM1500HB-66R 1500Amperes mj 13003
Text: CM1500HC-66R Single IGBTMOD HVIGBT Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 1500 Amperes/3300 Volts A D L L L S V NUTS (6 TYP) P 6 4 2 5 3 1 F E CM Q C E R U NUTS (3 TYP) T K B G H J W (8 TYP) M
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CM1500HC-66R
Amperes/3300
igbt 1500A
igbt module 1500A
transistor MJ 13003
CM1500HC-66R
CM1500HC
Powerex 1800V
CM1500HB-66R
1500Amperes
mj 13003
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Thermal grease
Abstract: No abstract text available
Text: CM75RX-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBTMOD + Brake NX-S Series Module 75 Amperes/1200 Volts AN AH AL AL AL AM AK R AD AL AM AL AM AL AM AL AY A D E F G DETAIL "B" AR AT DETAIL "A" AA(4 PLACES)
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CM75RX-24S
Amperes/1200
Thermal grease
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Untitled
Abstract: No abstract text available
Text: CM75RX-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBTMOD + Brake NX-Series Module 75 Amperes/1200 Volts AN AH AL AL AL AM AK R AD AL AM AL AM AL AM AL AY A D E F G DETAIL "B" AR AT DETAIL "A" AA(4 PLACES)
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CM75RX-24S
Amperes/1200
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motorola 2N5877
Abstract: 2N5877 2N5875 2N5876
Text: MOTOROLA S E M IC O N D U C T O R Order this document T E C H N IC A L D A T A bv 2 N 5 8 7 7 /d NPN 2 N 58 77 2 N 5 8 78 Com plem entary Silicon H igh-Pow er Transistors . . . designed for general-purpose power amplifier and switching applications. • •
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2N5877/D
motorola 2N5877
2N5877
2N5875 2N5876
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MJE371
Abstract: je371 MJE371K MJE3371 MJE3521 MJE521K MJE-371 l371 MJE521 19904
Text: MJE371 S IL IC O N MJE371K MJE3371 4 AMPERE POWER TRANSISTORS PLASTIC MEDIUM-POWER PNP SILICON TRANSISTORS PNP SILICON 40 VOLTS 40 and 60 WATTS . . . designed fo r use in general-purpose am plifier and switching circuits. Recommended fo r use m 5 to 20 W att audio am plifiers u ti
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MJE371
MJE371K
MJE3371
MJE371,
MJE3371
MJE521,
MJE521K
MJE3521
MJE371
je371
MJE-371
l371
MJE521
19904
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Untitled
Abstract: No abstract text available
Text: A COMPANY M O D EL “S O F T -S T A R T ” N TC Therm istors OF TECHNO In ru s h C u rre n t S u p p re s s in g D e v ic e s 1 .5 A to 2 5 A a t 6 5 C FEATURES • Switching power supply applications • Special marking is available upon request • Protective silicone coating is standard and has a nominal thickness of
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10SS25
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PIC625
Abstract: PIC626 pic600 di35 VIII-22 L215A
Text: HYBRID SWITCHING REGULATOR PIC625 PIC626 SWITCHING REGULATOR POWER OUTPUT STAGE 15 AMPERES FEATURES A L L A C T IV E E L E M E N T S F U L L Y P A S S IV A T E D H IG H O P E R A T IN G F R E Q U E N C Y l o > 10 O K H Z H IG H O P E R A T IN G E F F IC IE N C Y ( > 8 5 % , 7 A C IR C U IT )
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PIC625
PIC626
100KHZ)
T0-66/I
150-C
11-OUTPUT
PIC626
pic600
di35
VIII-22
L215A
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Untitled
Abstract: No abstract text available
Text: A COMPANY OF M O DEL SSN “S O F T -S T A R T ” N TC T h e rm is to rs P re lim in a ry For In ru s h C u rre n t S u p p re s s in g D e v ic e s 1 .5 A to 2 5 A a t 6 5 C FEA TU R ES • Switching power supply applications • Special marking is available upon request
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Untitled
Abstract: No abstract text available
Text: AN ALO G D E V IC E S High Performance 4/8 Channel Fault-Protected Analog Multiplexers ADG438F/ADG439F* FUNCTIONAL BLOCK DIAGRAMS FEATURES Fast Switching Times t 0 N 250 ns max ADG 439F ADG 438F t 0 FF 1 5 0 n s m a x si b— o 'f *- Fault and Overvoltage Protection -35 V , +55 V
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ADG438F/ADG439F*
ADG438F/ADG439F
ADG439F
16-Pin
R-16A)
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MUR7015
Abstract: DO-203AB MUR7005 MUR7010 MUR7020
Text: MO TO RO LA SC D IO DE S / O P T O b 3 b 7 2S S G D Ö b S n b4E D 3^5 MOT? MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA M UR7005 MUR7010 MUR7015 MUR7020 Sw itchm ode Pow er Rectifiers . designed for use in switching power supplies, inverters and as free wheeling diodes,
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b3b72SS
D0-203AB
MUR7005
MUR7010
MUR7015
MUR7020
MUR7020
MUR7005,
MUR7010,
MUR7015,
DO-203AB
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2n5195
Abstract: Motorola transistors 2N5192
Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA b y 2 N 5 W /D 2N 5194 2N 5195* Silicon PNP Pow er Transistors 'M o t o r o la P r e fe r r e d D e v ic e . . . for use in power am plifier and switching circuits, — excellent safe area limits. Complem ent to NPN 2N 5191, 2N5192
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2N5192
2N5194
2N5195
2N5194/D
2n5195
Motorola transistors 2N5192
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IRF143
Abstract: IRF141 IRF142 IRF140 F140
Text: 7 96 4 1 4 2 .SAMS U N G _ S EM IC O N D U C T O R 1 -' :V ñ DE § INC 98 D 0 5 0 7 9 □□OSD?^ T D r-3?-'3 N-CHANNEL POWER MOSFETS - IR F 1 40/141/142/143 FEA TU R ES LOW RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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IRF141
00GS435
F--13
IRF143
IRF142
IRF140
F140
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IRF320
Abstract: IRF322 IRF321 IRF323 321Z
Text: 7 9 6 4 142 SAMSUNG S E M IC O N D U C T O R Ifl 98D TNO D e J 7 T b 4142 0 0 0 5 1 0 e] 3 05109 ¡ D N-CHANNEL POWER MOSFETS IRF320/321/322/323 FEATURES • • • • • • • • Low RoS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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IRF320/321/322/323
IRF320.
IRF321
IRF322
IRF323
IRF320
321Z
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC X S TR S/ R F 12E D I b3t.7254 GGflSEME 5 | T- 3 3 - 0 7 ' r- 33-/7 MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA N PN M JD31,C PN P M JD32,C C o m p le m e n ta ry P o w e r T r a n s isto rs D P A K For Surface M o u n t A pp lication s Designed for general purpose amplifier and low speed switching applications.
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TIP31
TIP32
MJD31,
MJD32T
MJD31C,
MJD32C
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