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    SUD50N04 Price and Stock

    Vishay Siliconix SUD50N04-8M8P-4GE3

    MOSFET N-CH 40V 14A/50A TO252
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    DigiKey SUD50N04-8M8P-4GE3 Cut Tape 1,881 1
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    SUD50N04-8M8P-4GE3 Digi-Reel 1,881 1
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    SUD50N04-8M8P-4GE3 Reel 2,500
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    RS SUD50N04-8M8P-4GE3 Bulk 2,500
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    New Advantage Corporation SUD50N04-8M8P-4GE3 102,500 1
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    Vishay Siliconix SUD50N04-16P-E3

    MOSFET N-CH 40V 9.8A/20A TO252
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    DigiKey SUD50N04-16P-E3 Reel 2,000
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    Vishay Siliconix SUD50N04-09H-E3

    MOSFET N-CH 40V 50A TO252
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    Vishay Siliconix SUD50N04-05L-E3

    MOSFET N-CH 40V 115A TO252
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    DigiKey SUD50N04-05L-E3 Reel 2,000
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    Vishay Siliconix SUD50N04-8M8P-4BE3

    MOSFET N-CH 40V 14A/50A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SUD50N04-8M8P-4BE3 Cut Tape 1
    • 1 $1.83
    • 10 $1.163
    • 100 $1.83
    • 1000 $0.56599
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    SUD50N04-8M8P-4BE3 Digi-Reel 1
    • 1 $1.83
    • 10 $1.163
    • 100 $1.83
    • 1000 $0.56599
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    SUD50N04-8M8P-4BE3 Reel 2,500
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    Find more SUD50N04 price and stock on Findchips.com

    SUD50N04 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUD50N04-05L Vishay Siliconix MOSFETs Original PDF
    SUD50N04-05L-E3 Vishay Siliconix N-Channel 40-V (D-S), 175°C MOSFET Original PDF
    SUD50N04-05L-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 115A TO252 Original PDF
    SUD50N04-06H Vishay Siliconix MOSFETs Original PDF
    SUD50N04-07L Vishay Siliconix MOSFETs Original PDF
    SUD50N04-07L SPICE Device Model Vishay N-Channel 40-V (D-S) 175°C MOSFET Original PDF
    SUD50N04-09 Vishay N-Channel 40-V (D-S), 175°C MOSFET Original PDF
    SUD50N04-09H Vishay Siliconix MOSFETs Original PDF
    SUD50N04-09H-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 50A TO252 Original PDF
    SUD50N04-09 SPICE Device Model Vishay N-Channel 40-V (D-S) 175°C MOSFET Original PDF
    SUD50N04-16P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 9.8A TO252 Original PDF
    SUD50N04-25P Vishay Siliconix N-Channel 40-V (D-S) 175°C MOSFET Original PDF
    SUD50N04-37P-T4-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 5.4A TO252 Original PDF
    SUD50N04-8M8P-4GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 14A TO-252 Original PDF

    SUD50N04 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SUD50N04-13P-E3

    Abstract: marking 13P suu50n04-13
    Text: SUU/SUD50N04-13P Vishay Siliconix New Product N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.013 at VGS = 10 V 20 0.0155 at VGS = 4.5 V 20 VDS (V) 40 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg & UIS Tested RoHS


    Original     		PDF SUU/SUD50N04-13P O-251 O-252 SUD50N04-13P-E3 SUU50N04-13P-E3 08-Apr-05 SUD50N04-13P-E3 marking 13P suu50n04-13

    Untitled

    Abstract: No abstract text available
    Text: SUD50N04-10P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 40 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 30 nC COMPLIANT


    Original     		PDF SUD50N04-10P O-252 SUD50N04-10P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUD50N04-06P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a 0.0065 at VGS = 10 V 20 0.008 at VGS = 4.5 V 20 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 53.6 nC COMPLIANT


    Original     		PDF SUD50N04-06P O-252 SUD50N04-06P-E3 25electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sud50n04-8m8p

    Abstract: SUD50N04-8m8P-4GE3 diode 50A
    Text: SUD50N04-8m8P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0088 at VGS = 10 V 50 0.0105 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 16 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SUD50N04-8m8P 2002/95/EC O-252 SUD50N04-8m8P-4GE3 18-Jul-08 sud50n04-8m8p SUD50N04-8m8P-4GE3 diode 50A

    68B50

    Abstract: No abstract text available
    Text: New Product SUU/SUD50N04-16P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a, c 0.016 at VGS = 10 V 20 0.018 at VGS = 4.5 V 20 VDS (V) 40 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF SUU/SUD50N04-16P O-251 O-252 SUD50N04-16P-E3 SUU50N04-16P-E3 08-Apr-05 68B50

    SUD50N04

    Abstract: No abstract text available
    Text: SPICE Device Model SUU/SUD50N04-16P Vishay Siliconix N-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUU/SUD50N04-16P S-70955Rev. 14-May-07 SUD50N04

    74443

    Abstract: No abstract text available
    Text: SUD50N04-06P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a 0.0065 at VGS = 10 V 20 0.008 at VGS = 4.5 V 20 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 53.6 nC COMPLIANT


    Original     		PDF SUD50N04-06P O-252 SUD50N04-06P-E3 18-Jul-08 74443

    Untitled

    Abstract: No abstract text available
    Text: SUD50N04-09H Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A)c Qg (Typ) 40 0.009 at VGS = 10 V 50 55 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • High Threshold Voltage At High Temperature


    Original     		PDF SUD50N04-09H O-252 SUD50N04-09H-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: SUD50N04-10P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 40 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 30 nC COMPLIANT


    Original     		PDF SUD50N04-10P O-252 SUD50N04-10P-E3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SUU/SUD50N04-08P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.008 at VGS = 10 V 20 0.010 at VGS = 4.5 V 20 VDS (V) 40 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS


    Original     		PDF SUU/SUD50N04-08P O-251 O-252 SUD50N04-08P-E3 SUU50N04-08P-E3 08-Apr-05

    SUD50N04-06H

    Abstract: No abstract text available
    Text: SPICE Device Model SUD50N04-06H Vishay Siliconix N-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD50N04-06H 18-Jul-08 SUD50N04-06H

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUU/SUD50N04-10P Vishay Siliconix N-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUU/SUD50N04-10P 18-Jul-08

    datasheet 6821

    Abstract: transistor 6821 AN609 SUD50N04-06H
    Text: SUD50N04-06H_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUD50N04-06H AN609 10-Sep-07 datasheet 6821 transistor 6821

    Untitled

    Abstract: No abstract text available
    Text: SUD50N04-16P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.016 at VGS = 10 V 20 0.018 at VGS = 4.5 V 20 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 15.6 nC COMPLIANT


    Original     		PDF SUD50N04-16P O-252 SUD50N04-16P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SUD50N04-09

    Abstract: SUD50N04
    Text: SUD50N04-09 Vishay Siliconix New Product N-Channel 40-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 40 0.009 @ VGS = 10 V ID (A)c D TrenchFETr Power MOSFETS D 175_C Junction Temperature 50 APPLICATIONS D Automotive − ABS − High-Side Switch


    Original     		PDF SUD50N04-09 O-252 SUD50N04-09--E3 S-32679--Rev. 29-Dec-03 SUD50N04-09 SUD50N04

    Untitled

    Abstract: No abstract text available
    Text: SUD50N04-8m8P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0088 at VGS = 10 V 50 0.0105 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 16 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SUD50N04-8m8P 2002/95/EC O-252 SUD50N04-8m8P-4GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    68B50

    Abstract: No abstract text available
    Text: SUD50N04-16P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.016 at VGS = 10 V 20 0.018 at VGS = 4.5 V 20 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 15.6 nC COMPLIANT


    Original     		PDF SUD50N04-16P O-252 SUD50N04-16P-E3 11-Mar-11 68B50

    SUD50N04-07L

    Abstract: No abstract text available
    Text: SPICE Device Model SUD50N04-07L Vishay Siliconix N-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD50N04-07L S-60676Rev. 01-May-06 SUD50N04-07L

    Untitled

    Abstract: No abstract text available
    Text: SUD50N04-8m8P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0088 at VGS = 10 V 50 0.0105 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 16 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SUD50N04-8m8P 2002/95/EC O-252 SUD50N04-8m8P-4GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SUD50N04-37P

    Abstract: No abstract text available
    Text: New Product SUD50N04-37P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 VDS (V) 40 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 5.3 nC COMPLIANT APPLICATIONS


    Original     		PDF SUD50N04-37P O-252 SUD50N04-37P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SUD50N04-37P

    Untitled

    Abstract: No abstract text available
    Text: SUD50N04-10P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 40 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 30 nC COMPLIANT


    Original     		PDF SUD50N04-10P O-252 SUD50N04-10P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SUD50N04-06P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a 0.0065 at VGS = 10 V 20 0.008 at VGS = 4.5 V 20 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 53.6 nC COMPLIANT


    Original     		PDF SUD50N04-06P O-252 SUD50N04-06P-E3 20chay 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SUD50N04-07L Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)c 0.0074 at VGS = 10 V 65 0.0011 at VGS = 4.5 V 54 V(BR)DSS (V) 40 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • Low Threshold


    Original     		PDF SUD50N04-07L O-252 SUD50N04-07L 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: SUD50N04-8m8P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0088 at VGS = 10 V 50 0.0105 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 16 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SUD50N04-8m8P 2002/95/EC O-252 SUD50N04-8m8P-4GE3 11-Mar-11