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Vishay Siliconix SUB65P0415 P-CHANNEL 40-V (D-S) 175 DEGREE CENTIGRADE MOSFET Power Field-Effect Transistor, 65A I(D), 40V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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SUB65P04 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SUB65P04-15		Vishay Siliconix	MOSFETs		Original	PDF

SUB65P04 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TO263 Abstract: SUB65P04-15 SUP65P04-15 Text: SUP/SUB65P04-15 New Product Vishay Siliconix P-Channel 40-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.015 @ VGS = –10 V –65 0.023 @ VGS = –4.5 V –50 –40 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB65P04-15	Original	SUP/SUB65P04-15 O-220AB O-263 SUB65P04-15 SUP65P04-15 18-Jul-08 TO263 SUB65P04-15 SUP65P04-15	PDF
Untitled Abstract: No abstract text available Text: SUP/SUB65P04-15 Vishay Siliconix P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 65 0.023 at VGS = - 4.5 V - 50 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC S	Original	SUP/SUB65P04-15 2002/95/EC O-263 SUB65P04-15 SUP65P04-15 SUP65P04-15-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Untitled Abstract: No abstract text available Text: SUP/SUB65P04-15 Vishay Siliconix P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 65 0.023 at VGS = - 4.5 V - 50 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC S	Original	SUP/SUB65P04-15 2002/95/EC O-263 SUB65P04-15 SUP65P04-15 SUP65P04-15-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
mosfet 4456 Abstract: AN609 SUB65P04-15 Text: SUB65P04-15_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	SUB65P04-15 AN609 22-Aug-07 mosfet 4456	PDF
Untitled Abstract: No abstract text available Text: SUP/SUB65P04-15 Vishay Siliconix P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 65 0.023 at VGS = - 4.5 V - 50 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC S	Original	SUP/SUB65P04-15 2002/95/EC O-263 SUP65P04-15 SUB65P04-15 SUP65P04-15-E3 11-Mar-11	PDF
SUB65P04-15 Abstract: SUP65P04-15 Text: SUP/SUB65P04-15 New Product Vishay Siliconix P-Channel 40-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.015 @ VGS = –10 V –65 0.023 @ VGS = –4.5 V –50 –40 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB65P04-15	Original	SUP/SUB65P04-15 O-220AB O-263 SUB65P04-15 SUP65P04-15 S-00831--Rev. 01-May-00 SUB65P04-15 SUP65P04-15	PDF
sub65p04 Abstract: No abstract text available Text: SUP/SUB65P04-15 Vishay Siliconix P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 65 0.023 at VGS = - 4.5 V - 50 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC S	Original	SUP/SUB65P04-15 2002/95/EC O-263 SUP65P04-15 SUB65P04-15 SUP65P04-15-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. sub65p04	PDF
Untitled Abstract: No abstract text available Text: SUP/SUB65P04-15 Vishay Siliconix P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.015 at VGS = - 10 V - 65 0.023 at VGS = - 4.5 V - 50 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC S	Original	SUP/SUB65P04-15 2002/95/EC O-263 SUP65P04-15 SUB65P04-15 SUP65P04-15-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.	PDF
SUB65P04-15 Abstract: SUP65P04-15 Text: SUP/SUB65P04-15 New Product Vishay Siliconix P-Channel 40-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.015 @ VGS = –10 V –65 0.023 @ VGS = –4.5 V –50 –40 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB65P04-15	Original	SUP/SUB65P04-15 O-220AB O-263 SUB65P04-15 SUP65P04-15 08-Apr-05 SUB65P04-15 SUP65P04-15	PDF
FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2	PDF
VN10KLS Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated	Original	Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05	PDF
sum45n25 Abstract: PPAP PPAP for thermistor 0034D sud*45N05-20L SQ7414EN ceramic disc aec capacitors siliconix an80 SUP57N20-33 SUP75N06-08 Text: For Automotive Applications w w w. v i s h a y. c o m SELECTOR GuIdE Power MoSFeTs P O w E R M O S F E Ts V I S H AY I N T E R T E C H N O L O G Y, I N C . SeMICoNDUCTorS reCTIFIerS Schottky single, dual Standard, Fast, and ultra-Fast Recovery (single, dual)	Original	VMN-SG2117-0705 sum45n25 PPAP PPAP for thermistor 0034D sud*45N05-20L SQ7414EN ceramic disc aec capacitors siliconix an80 SUP57N20-33 SUP75N06-08	PDF