STL12IE90
Abstract: P025M sot935 gs 2030 1226 BM
Text: STL12IE90 900 V - 12 A - 90 mΩ POWER CASCODE MONOLITHIC CONFIGURATION ADVANCE DATA • ■ ■ ■ ■ ■ HIGH VOLTAGE / HIGH CURRENT CASCODE CONFIGURATION LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH UP TO 150 KHz SQUARED RBSOA UP TO 900 V VERY LOW CISS DRIVEN BY RG = 56 Ω
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STL12IE90
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STL12IE90
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ESBT
Abstract: an1699 STL12IE90 AN-1699
Text: AN1699 APPLICATION NOTE Efficient driving network for ESBT to reduce the dynamic V CESAT and enhance the switching performances Introduction This document deals with the ESBT driving requirements emitter switched bipolar transistor . First of all the classic driving network proposed in the literature has been analyzed to highlight
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ESBT
Abstract: AN1699 STL12IE90 AN-1699
Text: AN1699 APPLICATION NOTE EFFICIENT DRIVING NETWORK FOR ESBT IN FORWARD TOPOLOGY SMPS S.Buonomo, L.Difalco & R.Scollo 1. THE CLASSICAL DRIVING CIRCUIT The ESBT Emitter Switching Bipolar Transistor configuration consists of a High Voltage Bipolar Transistor and a Low Voltage Power Mosfet in Cascode topology, as shown in figure 1.
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AN1699
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ESBT
Abstract: AN1699 AN-1699 STL12IE90 emitter switched bipolar transistor
Text: AN1699 Application note Efficient driving network for ESBT to reduce the dynamic VCESAT and enhance the switching performances Introduction This document deals with the ESBT driving requirements emitter switched bipolar transistor . First of all the classic driving network proposed in the literature has been analyzed to
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AN1699
ESBT
AN1699
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emitter switched bipolar transistor
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