35F0121
Abstract: 35F0121-1SR-10 STEWARD 35F0121
Text: 35F0121-1SR-10 Pb Ω Ω 120 UNCONTROLLED DOCUMENT Ω 100 0amp 80 1amp 2amp 60 3amp 4amp 40 5amp 20 1 10 100 1000 120 Ω 100 80 Z 60 R 40 XL 20 1 10 Z 100 R 1000 10000 XL Steward
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35F0121-1SR-10
35F0121
35F0121-1SR-10
STEWARD 35F0121
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35F0121-0SR-10
Abstract: STEWARD 35F0121
Text: 35F0121-0SR-10 UNCONTROLLED DOCUMENT Pb Ω Ω 60 Ω 50 40 0amp 1amp 2amp 30 3amp 4amp 20 5amp 10 1 10 100 1000 60 Ω 50 40 30 Z 20 R XL 10 1 10 Z 100 R 1000 10000 X L Steward
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35F0121-0SR-10
35F0121-0SR-10
STEWARD 35F0121
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25F0121-0SR
Abstract: phillips PM2811 28F0121 28F0121-0SR 25F0121-1SR STEWARD 35F0121 TME 57
Text: EMI-Hi Current SMT Bead Table Single Line Surface Mount Chokes Mounting: SMT Ambient Temperature Range: -55 ° C to +125 ° C Mode: Differential Typical Impedance z ohms Part No. Package Size Mounting 25F0121-1SR 0121 SMT 28F0121-1SR 0121 SMT 35F0121-1SR
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25F0121-1SR
28F0121-1SR
35F0121-1SR
25F0121-0SR
28F0121-0SR
35F0121-0SR
25F0181-1SR
28F0181-1SR
35F0181-1SR
F0121-1SR
25F0121-0SR
phillips PM2811
28F0121
28F0121-0SR
25F0121-1SR
STEWARD 35F0121
TME 57
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35F0121-1SR-10
Abstract: ATC100B620 ERJ-3GEY0R00 eeafc1e100 bifet amplifier discrete schematic GaN TRANSISTOR
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928280W
RF3928
RF3928
DS110221
35F0121-1SR-10
ATC100B620
ERJ-3GEY0R00
eeafc1e100
bifet amplifier discrete schematic
GaN TRANSISTOR
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28F0181-1SR-10
Abstract: CAPACITOR 150 RED
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928280W
RF3928
RF3928
DS120508
28F0181-1SR-10
CAPACITOR 150 RED
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Untitled
Abstract: No abstract text available
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928
RF3928280W
DS120508
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GaN hemt
Abstract: power transistor gan s-band air surveillance system diagram using radar
Text: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928280
RF3928
RF3928
DS110720
GaN hemt
power transistor gan s-band
air surveillance system diagram using radar
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ATC100B620
Abstract: L22 amplifier Gan hemt transistor RFMD
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928280W
RF3928
RF3928
DS120119
ATC100B620
L22 amplifier
Gan hemt transistor RFMD
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thermocouple gaas
Abstract: No abstract text available
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology RF IN
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RF3928280W
RF3928
RF3928
DS110317
thermocouple gaas
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RFHA1023
Abstract: SEMICONDUCTOR J598
Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation
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RFHA1023
RFHA1023
DS110630
SEMICONDUCTOR J598
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Untitled
Abstract: No abstract text available
Text: RFHA1025 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features • Wideband Operation 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Supports Multiple Pulse Conditions 10% to 20% Duty Cycle
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RFHA1025
96GHz
215GHz
RFHA1025
DS130515
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SEMICONDUCTOR J598
Abstract: rfha
Text: RFHA1023A Proposed 250W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation
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RFHA1023A
15dBm
RFHA1023A
DS110622
SEMICONDUCTOR J598
rfha
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Untitled
Abstract: No abstract text available
Text: RFHA1023 RFHA1023 225W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin The RFHA1023 is a 36V 225W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high
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RFHA1023
RFHA1023
DS131021
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RF3928B
Abstract: power transistor gan s-band RF392
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
RF3928B
DS111208
power transistor gan s-band
RF392
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c11cf
Abstract: No abstract text available
Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse
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RFHA1023
RFHA10k
DS120508
c11cf
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Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high
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RFHA1025
RFHA1025
DS130910
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Untitled
Abstract: No abstract text available
Text: RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium
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RFHA1027
RFHA1027
DS140204
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Untitled
Abstract: No abstract text available
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
DS130313
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Untitled
Abstract: No abstract text available
Text: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology RF OUT VD Pin 2 GND BASE Supports Multiple Pulse
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RFHA1020
DS120508
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Untitled
Abstract: No abstract text available
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
DS120503
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35F0121-1SR-10
Abstract: No abstract text available
Text: PH YSIC AL DIMENSIONS: A 3.05 [.120] ± B ± 0.08 [.003] 2.54 [.100] 35F0121-1SR-10 0.08 [.003] Bi 3.05 [.120] E L E C T R IC A L C H A R A C T E R IST IC S: C 8.51 [.335] ± 0.23 [.009] Ci 9.53 [.375] + MAX WIRE DIMENSIONS: Ti 1.27 [.050] T2 1.52 [.060] REF.
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35F0121-1SR-10
2002/95/EC
E4991A
6194A
35F0121-1SR-10-C-2
35F0121-1SR-10
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Untitled
Abstract: No abstract text available
Text: PH YSIC AL DIMENSIONS: A 3.05 [.120] ± B ± 0.08 [.003] 2.54 [.100] 35F0121-1SR-10 0.08 [.003] Bi 3.05 [.120] E L E C T R IC A L C H A R A C T E R IST IC S: C 8.51 [.335] ± 0.23 [.009] Ci 9.53 [.375] + MAX WIRE DIMENSIONS: Ti 1.27 [.050] T2 1.52 [.060] REF.
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35F0121-1SR-10
CART121
2002/95/EC
35FQ121--1SR
--10--D--2
E4991A
6194A
H0121
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35F0121
Abstract: No abstract text available
Text: 35F0121-0SR-10 PHYSICAL DIMENSIONS: A 3 .0 5 [.1 2 0 ] ± 0 .0 8 [.0 0 3 ] B 2 .5 4 [.1 0 0 ] ± 0 .0 8 [.0 0 3 ] Bi 3 . 0 5 [ . 1 2 0 ] ± C - 4 .0 6 Ci 5 . 0 8 [.1 6 0 ] E L E C T R IC A L C H A R A C T E R IS T IC S : z MAX 0 .1 0 [ . 0 0 4 ] N o m in a l
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35F0121-0SR-10
E4991A
6194A
35F0121
--1SR--10--A--2
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CART121-03
Abstract: No abstract text available
Text: 35F0121-0SR-10 PHYSICAL DIMENSIONS: A 3 .0 5 [.1 2 0 ] B 2 .5 4 [.1 0 0 ] ± 0 .0 8 [.0 0 3 ] ± 0 .0 8 [.0 0 3 ] Bi 3 . 0 5 [ . 1 2 0 ] + MAX C + ELECTRICAL CHARACTERISTICS: z 4 .0 6 [.1 6 0 ] - 0 .1 0 [ . 0 0 4 ] Ci 5 . 0 8 [.2 0 0 ] - MAX N om inal M in im u m
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35F0121-0SR-10
10MHz
E4991A
6194A
H0121
CART121-03
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