CY7C1069AV33
Abstract: No abstract text available
Text: CY7C1069AV33 2 M x 8 Static RAM 2 M × 8 Static RAM Functional Description Features The CY7C1069AV33 is a high performance complementary metal oxide semiconductor CMOS static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished
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CY7C1069AV33
CY7C1069AV33
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cd 5151
Abstract: 1MX4 EDI8G322048V EDI8G322048V20MMC DQ28-DQ31
Text: EDI8G322048V 2048K x 32 Static RAM CMOS, High Speed Module Features DESCRIPTION n 2048K x 32 bit CMOS Static n Random Access Memory The EDI8G322048V is a high speed 64 megabit Static RAM module organized as 2048K words by 32 bits. This module is constructed from sixteen 1024K x 4 Static RAMs in SOJ
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EDI8G322048V
2048K
EDI8G322048V
1024K
EDI8G322048V20MMC
EDI8G322048V25MMC
EDI8G322048V35MMC
cd 5151
1MX4
EDI8G322048V20MMC
DQ28-DQ31
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CY7C1069AV33
Abstract: No abstract text available
Text: CY7C1069AV33 2 M x 8 Static RAM 2 M × 8 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1069AV33 is a high performance complementary metal oxide semiconductor CMOS static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished
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CY7C1069AV33
CY7C1069AV33
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10ZX
Abstract: CY7C1069AV33-10ZXC CY7C1069AV33
Text: CY7C1069AV33 2 M x 8 Static RAM 2 M × 8 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1069AV33 is a high performance complementary metal oxide semiconductor CMOS static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished
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CY7C1069AV33
CY7C1069AV33
727-CYC1069AV3310ZXC
CY7C1069AV33-10ZXC
10ZX
CY7C1069AV33-10ZXC
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CY7C1069AV33
Abstract: No abstract text available
Text: CY7C1069AV33 2 M x 8 Static RAM 2 M × 8 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1069AV33 is a high performance complementary metal oxide semiconductor CMOS static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished
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CY7C1069AV33
CY7C1069AV33
54-pin
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Untitled
Abstract: No abstract text available
Text: EDI8G322048C 2048K x 32 Static R AM CMOS, High Speed Module RAM FEATURES DESCRIPTION n 2048K x 32 bit CMOS Static n Random Access Memory The EDI8G322048C is a high speed 64 megabit Static RAM module organized as 2048K words by 32 bits. This module is constructed from sixteen 1024K x 4 Static RAMs in SOJ
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EDI8G322048C
2048K
EDI8G322048C
1024K
EDI8G322048C20MMC
EDI8G322048C25MMC
EDI8G322048C35MMC
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DQ8-DQ11
Abstract: EDI8G322048C static ram 2048K 70 ns
Text: EDI8G322048C 2048K x 32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION 2048K x 32 bit CMOS Static The EDI8G322048C is a high speed 64 megabit Static RAM module organized as 2048K words by 32 bits. This module is constructed from sixteen 1024K x 4 Static RAMs in SOJ packages on an epoxy laminate FR4 board.
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EDI8G322048C
2048K
EDI8G322048C
1024K
8G322048C
EDI8G322048C20MMC
DQ8-DQ11
static ram 2048K 70 ns
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CY7C1069AV33
Abstract: No abstract text available
Text: CY7C1069AV33 2M x 8 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1069AV33 is a high performance complementary metal oxide semiconductor CMOS static RAM organized as 2,097,152 words by 8 bits. Writing to the device is accomplished
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CY7C1069AV33
CY7C1069AV33
54-pin
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EDI8M8256C
Abstract: 120PC
Text: EDI8M8256C70/100/120PC m o \ High Performance 2 Megabit SRAM Module MliyiMIDNIÆOT 256Kx8 Static RAM CMOS, Module Features The EDI8M8256C is a 2048K bit CMOS Static RAM module. 256Kx8 bit CMOS Static Random Access Memory Module It is based on eight 32Kx8 Static RAMs in plastic
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EDI8M8256C70/100/120PC
256Kx8
EDI8M8256C
2048K
32Kx8
120ns
120PC
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Untitled
Abstract: No abstract text available
Text: ^E D I _ EDI8F82048C Electronic Dvtions Inc. Commercial Sixteen Megabit SRAM Module 16 Megabit 2Megx8 Static RAM CMOS, Module Features The EDI8F82048C is a 16 Megabit CMOS Static RAM 2048Kx8 bit CMOS Static based on sixteen 128Kx8 Static RAMs mounted on a multi- Random Access Memory
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EDI8F82048C
EDI8F82048C
2048Kx8
128Kx8
150ns
EDI8F82048LP)
EDI8F82048C70BSC
EDI8F82048C85BSC
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D1581
Abstract: OQ10 EDI8G322048C
Text: ^EDI EDI8G322048C 2048KX32 SRAM Module ELECTRONIC DESIGNS, INC 2048KX32 Static RAM CMOS, High Speed Module Features The EDI8G322048C is a high speed 64 m egabit Static 2048Kx32 bit CMOS Static RAM m odule organized as 2048K w ords by 32 bits. This Random Access Memory
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EDI8G322048C
2048KX32
EDI8G322048C20MMC
EDI8G322048C25MMC
EDI8G322048C35MMC
I8G322048C
D1581
OQ10
EDI8G322048C
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Untitled
Abstract: No abstract text available
Text: EDI8M8256C70/100/120PC ^EDI High Performance 2 Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8256C is a 2048K bit CMOS Static RAM module. It is based on eight 32Kx8 Static RAMs in plastic VSOP packages mounted on a multi-layered ceramic
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EDI8M8256C70/100/120PC
256Kx8
EDI8M8256C
2048K
32Kx8
120ns
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI8G322048C 2048KX32 SRAM Module ELECTRONIC DESIGNS, INC 2048KX32 Static RAM CMOS, High Speed Module Features The EDI8G 322048C is a high speed 64 m egabit Static 2048Kx32 bit CMOS Static RAM m odule organized as 2048K w ords by 32 bits. This Random Access Memory
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EDI8G322048C
2048KX32
322048C
2048K
1024Kx4
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A571
Abstract: EDI8M8257C EDI8M8257C25C6C
Text: EDI8M8257C Electronic Designs Inc. i High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi layered ceramic substrate. Functional eq uivalence to the monolithic two megabit
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EDI8M8257C
256Kx8
EDI8M8257C
2048K
128Kx8
the128Kx8
EDI8M8257LP)
the93
3230im
A571
EDI8M8257C25C6C
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DIP 32 pinout
Abstract: No abstract text available
Text: ^EDI EDI8M8257C Electronic Designs Inc. • High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi layered ceramic substrate. Functional equivalence to the monolithic two megabit
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256Kx8
150ns
150ns
EDI8M8257LP)
EDI8M8257C
EDI8M8257C
2048K
128Kx8
EDI8M8257LP100C6B
DIP 32 pinout
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Untitled
Abstract: No abstract text available
Text: m o i _ EDI8M8257C Electronic Designs Inc. High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi layered ceramic substrate. Functional equivalence to the monolithic two megabit
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EDI8M8257C
256Kx8
EDI8M8257C
2048K
128Kx8
the128Kx8
EDI8M8257LP)
323011M
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EDI8M8257C
Abstract: EDI8M8257C25M6C EDI8M8257C30M6C EDI8M8257C35M6C EDI8M8257C45M6C EDI8M8257C55M6C
Text: _ EDI8M8257C m o\ B*c*ontc DMgrn inc. High Speed Two Megabft SRAM Module 256Kx8 Static RAM CMOS;Module m Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi layered ceramic substrate. Functional equivalence to the monolithic two megabit
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EDI8M8257C
256Kx8
EDI8M8257C
2048K
128Kx8
the128Kx8
The32
EDI8M8257LP)
theEDBM8257C
EDI8M8257LP85P6C
EDI8M8257C25M6C
EDI8M8257C30M6C
EDI8M8257C35M6C
EDI8M8257C45M6C
EDI8M8257C55M6C
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EDI8M8257C
Abstract: DDD15L
Text: ELECTRONIC DESIGNS INC S1E D 3230114 W D Ì 00012b2 Ö7T I EL3> EDI8M8257C B«dronlc DM igro Inc.a High Speed Two Megabit SRAM Module Pfôiy1DIMIHIV 256Kx8 Static RAM CMOS;Module Features T - Y é -Z3 -/</ The EDI8M8257C is a 2048K bit CMOS Static RAM 256Kx8 bit CMOS Static
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EDI8M8257C
256Kx8
EDI8M8257C
2048K
128Kx8
the128Kx8
The32
EDI8M8257LP)
I8M8257LP85P6C
EDI8M8257LP100P6C
DDD15L
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t1is
Abstract: No abstract text available
Text: ELECTRONIC DESIGNS INC ^ED I 3QE D Elaekontfi Dislgns Inc. » • 3530114 0000714 b ■ EDI8M8257C/LP/P High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C/LP/P is a 2048K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a
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QD00714
EDI8M8257C/LP/P
256Kx8
EDI8M8257C/LP/P
2048K
128Kx8
the128Kx8
T-46-23-14
ED18M8257C/LP/P
85-150ns
t1is
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Untitled
Abstract: No abstract text available
Text: m a _ Electronic Dsaigns Inc. > EDI8F82048C Commercial Sixteen Megabit SRAM Module 16 Megabit 2Megx8 Static RAM CMOS, Module Features The EDI8F82048C is a 16 Megabit CMOS Static RAM based on sixteen 128Kx8 Static RAMs mounted on a multilayered epoxy laminate (FR4) substrate.
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EDI8F82048C
EDI8F82048C
128Kx8
EDI8F82048LP)
2048Kx8
EDI8F82048C70BSC
EDI8F82048C85BSC
EDI8F82048C100BSC
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Untitled
Abstract: No abstract text available
Text: ^E D I _ EDI8M8257C B # clro n lc D« 4 g n t In c. i High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi layered ceramic substrate.
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EDI8M8257C
256Kx8
EDI8M8257C
2048K
128Kx8
28Kx8
The32
EDI8M8257LP)
EDI8M8257C35C6B
EDI8M8257C45C6B
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ic 4570 PINOUT
Abstract: 4570 chip ic 229AC
Text: ^EDI EDI8M8257C/LP/P E lectronic Designs Inc. High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C/LP/P is a 2048K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi-layered ceramic substrate. Functional equivalence to the monolithic four mega
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EDI8M8257C/LP/P
256Kx8
150ns
EDI8M8257C/LP/P
2048K
128Kx8
85-150ns
ic 4570 PINOUT
4570 chip ic
229AC
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EDI8F82048C
Abstract: bb3011
Text: ELECTRONIC DESIGNS INC SIE D • 3230114 0QQ11MÔ SIR H E L D EDI8F82048C m o\ B*ctonJc DMigm Inc.« Commercial Sixteen Megabit SRAM Module 16 Megabit 2Megx8 Static RAM CMOS, Module Features The EDI8F82048C is a 16 Megabit CMOS Static RAM based on sixteen 128Kx8 Static RAMs mounted on a multi
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323011M
0D0114Ã
EDI8F82048C
EDI8F82048C
128Kx8
EDI8F82048LP)
I8F82048C70BSC
I8F82048C85BSC
bb3011
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Untitled
Abstract: No abstract text available
Text: m o EDI8G322048C i 2043Kx32 SRAMModtÉe ElfC TB O N C D O C N SN C . 2048Kx32Static RAM CMOS> High SpeedModule Features The EDI8G322048C is a high speed 64 megabit Static 2048Kx32 bit CMOS Static RAM module organized as 2048K words by 32 bits. This Random Access Memory
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EDI8G322048C
2043Kx32
2048Kx32Static
EDI8G322048C
2048Kx32
2048K
1024Kx4
EDI8G322M8C
EDI8G322048C20MMC
EDI8G322048C25MMC
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