Untitled
Abstract: No abstract text available
Text: Catalog 1308242 Issued 3-03 SCHRACK V23092 SNR series 6 Amp Slim Miniature, PC Board Relay VDE File E48393 File 0631 / 0160 / 0435 Users should thoroughly review the technical data before selecting a product part number. It is recommended that user also seek out the pertinent approvals files of
|
Original
|
PDF
|
V23092
E48393
170mW.
24VDC,
12VDC,
48VDC,
|
st MARKING E4
Abstract: KTA711U E4 marking
Text: SEMICONDUCTOR KTA711U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking E4 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark E KTA711U hFE Grade 4 Y 4 , GR(6) * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No.
|
Original
|
PDF
|
KTA711U
2006-2010-2ek
st MARKING E4
KTA711U
E4 marking
|
KTA711E
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA711E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking E4 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark E KTA711E hFE Grade 4 Y 4 , GR(6) * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No.
|
Original
|
PDF
|
KTA711E
2006-2010-ek
KTA711E
|
25C6
Abstract: GDI-30F J600 KT19 kt 605 600AGP20
Text: Double Row Terminal Blocks KulkaGOOAGP Series 300 Volts Specifications: Base, Phenolic, 150°C 3/8" Centers JJ GDI-30F Material is Available Wire Range with Wire Binding Open Back Design Screw #12-#22 Awg -15 Amps Screws, #6-32 Binder Head, Phil-Slot UL Recognized File No. E47811
|
Original
|
PDF
|
GDI-30F)
E47811
LR19766
600AGP
25C6
GDI-30F
J600
KT19
kt 605
600AGP20
|
Untitled
Abstract: No abstract text available
Text: STAC4933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFET Preliminary data Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package
|
Original
|
PDF
|
STAC4933
STAC4933
STAC177B
|
transistor marking G9
Abstract: J4-81 j4 81 MARKING D8
Text: STAC3933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package
|
Original
|
PDF
|
STAC3933
STAC3933
STAC177B
transistor marking G9
J4-81
j4 81
MARKING D8
|
Untitled
Abstract: No abstract text available
Text: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european
|
Original
|
PDF
|
SD4933
2002/95/EEC
SD4933
|
SD4933
Abstract: M177 marking code h4 capacitor transistor marking code 325
Text: SD4933 HF/VHF/UHF RF power N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European
|
Original
|
PDF
|
SD4933
2002/95/EEC
SD4933
M177
marking code h4 capacitor
transistor marking code 325
|
LSE B9 transformer
Abstract: SD4933MR LSE B6 transformer SD4933
Text: SD4933MR 50 V moisture resistant DMOS transistor for ISM applications Datasheet — preliminary data Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz
|
Original
|
PDF
|
SD4933MR
2002/95/EEC
M177MR
SD4933MR
LSE B9 transformer
LSE B6 transformer
SD4933
|
Untitled
Abstract: No abstract text available
Text: SD4933MR 50 V moisture resistant DMOS transistor for ISM applications Datasheet - preliminary data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 300 W min. with 24 dB gain @ 30 MHz
|
Original
|
PDF
|
SD4933MR
2002/95/EEC
M177MR
SD4933MR
DocID023664
|
92196A146
Abstract: SD3933 rf transistor mark code H1 12AWG 700B M177 toroid 6009 McMaster-Carr
Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF
|
Original
|
PDF
|
SD3933
2002/95/EEC
SD3933
92196A146
rf transistor mark code H1
12AWG
700B
M177
toroid 6009
McMaster-Carr
|
McMaster-Carr
Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
Text: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF
|
Original
|
PDF
|
SD3933
2002/95/EEC
SD3933
McMaster-Carr
m174
92196a
ATC200B
marking h5
92196A1
91252
5050-0037
|
Untitled
Abstract: No abstract text available
Text: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF
|
Original
|
PDF
|
SD3933
2002/95/EEC
SD3933
|
SD4933
Abstract: M177 With24-dB
Text: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european
|
Original
|
PDF
|
SD4933
2002/95/EEC
SD4933
M177
With24-dB
|
|
|
STMicroelectronics smd marking code
Abstract: BGA and QFP Package 14x14 STMICROELECTRONICS MSL STMicroelectronics date code tssop-14 HiQuad package STMicroelectronics pentawatt date code opto mold compound infineon msl TQFP 14X20 ST TSSOP Marking
Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN CRP/04/744 LEAD-FREE CONVERSION PROGRAM Compliance with RoHS 1 1 RoHS = Restriction of the use of certain Hazardous Substances European directive 2002/95/EC November 18, 2004 Page 1/12 2004 STMicroelectronics - All Rights Reserved
|
Original
|
PDF
|
CRP/04/744
2002/95/EC)
STMicroelectronics smd marking code
BGA and QFP Package 14x14
STMICROELECTRONICS MSL
STMicroelectronics date code tssop-14
HiQuad package
STMicroelectronics pentawatt date code
opto mold compound
infineon msl
TQFP 14X20
ST TSSOP Marking
|
SD4933
Abstract: M177
Text: SD4933 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european
|
Original
|
PDF
|
SD4933
2002/95/EEC
SD4933
M177
|
STMicroelectronics smd marking code
Abstract: smd marking code stmicroelectronics BGA bga 10x13 BGA 15X15 BGA 23X23 HEPTAWATT SMD Marking STMicroelectronics tqfp INFINEON package tqfp PART MARKING PLCC Part Marking STMicroelectronics Date Code Marking STMicroelectronics PACKAGE DPAK
Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN MLD-MIC/05/943 Notification Date 02/23/2005 CONVERSION TO PB-FREE PRODUCTION MIC - MICROCONTROLLERS 1/4 PCN MLD-MIC/05/943 - Notification Date 02/23/2005 Table 1. Change Identification Product Identification Product Family/Commercial Product
|
Original
|
PDF
|
MLD-MIC/05/943
MLD-MIC/05/943
STMicroelectronics smd marking code
smd marking code stmicroelectronics
BGA bga 10x13
BGA 15X15
BGA 23X23
HEPTAWATT SMD
Marking STMicroelectronics tqfp
INFINEON package tqfp PART MARKING
PLCC Part Marking STMicroelectronics
Date Code Marking STMicroelectronics PACKAGE DPAK
|
102. 1kv
Abstract: CL31 samsung capacitor A-TC02 HEC capacitor ceramic C0805 102 1kv CL21 105 j 107 10V epcos C0805X474K050T CL21B474 MLCC X8R murata
Text: HOLYSTONE ENTERPRISE INC Surface mount MLCC Capacitor X-Reference Guide Chip Case Size/Style Cross Reference Chart HEC C0201 C0402 C0603 C0805 C1206 C1210 C1808 C1812 C1825 C2220 C2225 ATC ATC0201 ATC 0402 ATC 0603 ATC 0805 ATC 1206 ATC 1210 ATC 1808 ATC 1812 ATC 1825 ATC 2220 ATC 2225
|
Original
|
PDF
|
C0201
C0402
C0603
C0805
C1206
C1210
C1808
C1812
C1825
C2220
102. 1kv
CL31 samsung capacitor
A-TC02
HEC capacitor ceramic C0805
102 1kv
CL21 105 j
107 10V epcos
C0805X474K050T
CL21B474
MLCC X8R murata
|
AN1751
Abstract: AN2348 EMIF09-SD01F3 JESD97
Text: EMIF09-SD01F3 9-line IPAD , EMI filter and ESD protection Features • 9-line EMI low-pass filter and ESD protection ■ High efficiency in EMI filtering ■ Lead-free package ■ 400 µm pitch ■ Very low PCB space occupation: < 4 mm2 ■ Very thin package: 0.6 mm
|
Original
|
PDF
|
EMIF09-SD01F3
IEC61000-4-2
AN1751
AN2348
EMIF09-SD01F3
JESD97
|
Untitled
Abstract: No abstract text available
Text: EMIF09-SD01F3 9-line IPAD , EMI filter and ESD protection Features • 9-line EMI low-pass filter and ESD protection ■ High efficiency in EMI filtering ■ Lead-free package ■ 400 µm pitch ■ Very low PCB space occupation: < 4 mm2 ■ Very thin package: 0.6 mm
|
Original
|
PDF
|
EMIF09-SD01F3
IEC61000-4-2
|
9966
Abstract: SHT31 12AWG 700B M177 SD3933 91252 ATC700B122 McMaster-Carr a/IC+oz+9966
Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF
|
Original
|
PDF
|
SD3933
2002/95/EEC
SD3933
9966
SHT31
12AWG
700B
M177
91252
ATC700B122
McMaster-Carr
a/IC+oz+9966
|
Untitled
Abstract: No abstract text available
Text: EMIF09-SD01F3 IPAD 9 line EMI filter and ESD protection Main application • Secure digital memory card in mobile phones and communication systems Description The EMIF09-SD01F3 is a highly integrated array designed to suppress EMI/RFI noise for secure digital memory cards. The EMIF09-SD01F3 is in a
|
Original
|
PDF
|
EMIF09-SD01F3
EMIF09-SD01F3
|
4nf03l
Abstract: 4NF03 STN4NF03L st MARKING E4 e4 sot223 JESD97 diode MARKING CODE 917 marking e4 sot ST
Text: STN4NF03L N-channel 30 V - 0.039 Ω - 6.5 A - SOT-223 STripFET II Power MOSFET Features • Type VDSS RDS on ID STN4NF03L 30 V <0.05 Ω 6.5 A 2 Low threshold drive 1 Application ■ 2 3 SOT-223 Switching applications Description This Power MOSFET is the latest development of
|
Original
|
PDF
|
STN4NF03L
OT-223
4NF03L
4nf03l
4NF03
STN4NF03L
st MARKING E4
e4 sot223
JESD97
diode MARKING CODE 917
marking e4 sot ST
|
d1189
Abstract: CONNECTOR 8 PIN Round PLT CONNECTOR 5 PIN Round PLT MIL-C-5530 d648a d638a
Text: PLS/PLT Series $•& - o5"'OS & ÏT Â a Row, Low Profile F E A T U R E S STRAIGHT (10 to 60 positions) * Triple keying slots assure proper mating * PLS m ates w ith IDC socket connectors on 0.100" centers • PLT mates w ith most standard sockets, including Crane's ATP Series
|
OCR Scan
|
PDF
|
IS09001
00D04bfi
d1189
CONNECTOR 8 PIN Round PLT
CONNECTOR 5 PIN Round PLT
MIL-C-5530
d648a
d638a
|
