Common rail piezo injector driver
Abstract: Common rail injector driver COMMON RAIL SOLENOID DIRECT INJECTION piezo injector driver Piezo Direct Injection SCHEMATIC IGNITION WITH IGBTS FAN7085 DRIVER injector Common rail FQD3P50TM FQD12N201
Text: AUTOMOTIVE SOLUTIONS TO MAXIMIZE FUEL EFFICIENCY & REDUCE CO2 EMISSIONS Saving our world, 1mW at a time www.fairchildsemi.com INTRODUCTION Fairchild Semiconductor Automotive Solutions Whether specifying an intelligent ignition control for high performance engine management systems or
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Abstract: No abstract text available
Text: FDC6327C Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate
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FDC6327C
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Abstract: No abstract text available
Text: FDC5612 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4.3 A, 60 V. RDS ON = 0.055 W
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FDC5612
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SSOT-6
Abstract: CBVK741B019 F63TNR FDC602P FDC633N 55A4 V1527
Text: FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage
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FDC602P
SSOT-6
CBVK741B019
F63TNR
FDC602P
FDC633N
55A4
V1527
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P-Channel MOSFET code L1A S
Abstract: CBVK741B019 F63TNR FDC6324L FDC633N SOIC-16 in20v
Text: March 1999 FDC6324L Integrated Load Switch General Description Features These Integrated Load Switches are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state
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FDC6324L
P-Channel MOSFET code L1A S
CBVK741B019
F63TNR
FDC6324L
FDC633N
SOIC-16
in20v
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CBVK741B019
Abstract: F63TNR FDG6302P FFB3906 FMB3906 MMPQ3906 SC70-6 SOIC-16 4977 gm
Text: E2 MMPQ3906 C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .2A B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.
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MMPQ3906
SC70-6
SOIC-16
FFB3906
FMB3906
FMB3906
FFB3906
CBVK741B019
F63TNR
FDG6302P
MMPQ3906
SC70-6
SOIC-16
4977 gm
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FDC6331L
Abstract: SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR
Text: FDC6331L Integrated Load Switch Features General Description • –2.8 A, –8 V. RDS ON = 55 mΩ @ V GS = –4.5 V RDS(ON) = 70 mΩ @ V GS = –2.5 V RDS(ON) = 100 mΩ @ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where
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FDC6331L
FDC6331L
SSOT-6
ZENER SINGLE COLOR CODE
FDC633N
125OC
AN1030
CBVK741B019
F63TNR
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F202
Abstract: FDZ202P F-202 AF202
Text: FDZ202P P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ202P minimizes both PCB space and RDS ON . This BGA MOSFET embodies a
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FDZ202P
FDZ202P
F202
F-202
AF202
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SC70-6 SSOT6
Abstract: SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2227A FFB2907A
Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and
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SC70-6
FFB2227A
FMB2227A
FFB2227A
FFB2222A
FFB2907A
SC70-6 SSOT6
SSOT-6
.318 SC70-6
ic 311 pdf datasheets
CBVK741B019
F63TNR
FDG6302P
FFB2222A
FFB2907A
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CBVK741B019
Abstract: F63TNR FDC3512 FDC633N
Text: FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDC3512
CBVK741B019
F63TNR
FDC3512
FDC633N
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FDC3535
Abstract: marking 535
Text: P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mΩ Features General Description Max rDS on = 183 mΩ at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and
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Text: Si3445DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.
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Si3445DV
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Text: FDC640P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage
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FDC640P
FDC640P
NF073
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FDC633N marking convention
Abstract: No abstract text available
Text: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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FDC633N
NF073
FDC633N marking convention
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Text: FDC699P P-Channel 2.5V PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDC699P
FDC699P
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Abstract: No abstract text available
Text: Si3456DV N-Channel PowerTrenchÒ MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain
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Si3456DV
NF073
NF073
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marking 606
Abstract: diode marking EY
Text: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.
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FDC606P
FDC606P
NF073
marking 606
diode marking EY
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Marking 638
Abstract: No abstract text available
Text: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain
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FDC638P
FDC638P
NF073
Marking 638
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155oC
Abstract: No abstract text available
Text: FDZ203N N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ203N minimizes both PCB space and RDS ON . This BGA MOSFET embodies a
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FDZ203N
FDZ203N
155oC
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Untitled
Abstract: No abstract text available
Text: November 1997 FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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FDC653N
NB3E005A
NF073
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Abstract: No abstract text available
Text: FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDC3512
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7.4v battery charger
Abstract: 7.4v battery ssot-6 MAX4845 MAX4843 MAX4843ELT MAX4844 MAX4844ELT MAX4845ELT MAX4846
Text: 19-3649; Rev 0; 4/05 Overvoltage Protection Controllers with Low Standby Current Features The MAX4843–MAX4846 overvoltage protection controllers protect low-voltage systems against high-voltage faults of up to 28V. When the input voltage exceeds the overvoltage threshold, these devices turn off a low-cost,
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MAX4843
MAX4846
MAX4843)
MAX4844)
MAX4845)
MAX4846)
MAX4846
7.4v battery charger
7.4v battery
ssot-6
MAX4845
MAX4843ELT
MAX4844
MAX4844ELT
MAX4845ELT
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202P
Abstract: F202 FDZ202P
Text: FDZ202P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ202P minimizes both PCB space This BGA MOSFET embodies a
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FDZ202P
202P
F202
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Abstract: No abstract text available
Text: =M l C O N D U C T O R tm FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize
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FDC6306P
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