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    FDC638P Price and Stock

    onsemi FDC638P

    MOSFET P-CH 20V 4.5A SUPERSOT6
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    DigiKey FDC638P Cut Tape 7,184 1
    • 1 $0.82
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    FDC638P Digi-Reel 7,184 1
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    FDC638P Reel 6,000 3,000
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    Avnet Americas FDC638P Reel 3,000 11 Weeks 3,000
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    FDC638P Reel 0 Weeks, 2 Days 2,942
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    FDC638P Reel 11 Weeks 3,000
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    FDC638P Ammo Pack 5
    • 1 $1.13
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    Mouser Electronics FDC638P 99,034
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    Verical FDC638P 6,000 27
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    FDC638P 6,000 3,000
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    FDC638P 6,000 3,000
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    Arrow Electronics FDC638P Cut Strips 6,000 11 Weeks 1
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    FDC638P 6,000 11 Weeks 3,000
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    FDC638P 1,975 11 Weeks 1
    • 1 $0.4724
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    Newark FDC638P Cut Tape 6 1
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    FDC638P Reel 3,000
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    Future Electronics FDC638P Reel 21,000 21 Weeks 3,000
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    Onlinecomponents.com FDC638P 6,000
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    Bristol Electronics FDC638P 140
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    TME FDC638P 1,358 1
    • 1 $0.607
    • 10 $0.476
    • 100 $0.303
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    Richardson RFPD FDC638P 6,000
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    Avnet Silica FDC638P 6,000 12 Weeks 3,000
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    EBV Elektronik FDC638P 3,000 13 Weeks 3,000
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    Flip Electronics FDC638P 18,000
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    Master Electronics FDC638P 6,000
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    New Advantage Corporation FDC638P 30,000 1
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    onsemi FDC638P-P

    MOSFET N-CH 60V SUPERSOT6
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    DigiKey FDC638P-P Reel
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    Fairchild Semiconductor Corporation FDC638P

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    Bristol Electronics FDC638P 5,370
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    FDC638P 4,054
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    FDC638P 3,000
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    FDC638P 1,824
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    Quest Components FDC638P 8,800
    • 1 $0.369
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    • 10000 $0.1353
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    FDC638P 4,296
    • 1 $0.615
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    • 1000 $0.246
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    FDC638P 103
    • 1 $0.625
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    ComSIT USA FDC638P 7,077
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    Win Source Electronics FDC638P 272,100
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    Others FDC638P

    AVAILABLE EU
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    ComSIT USA FDC638P 6,000
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    Fairchild Semiconductor Corporation FDC638P-NL

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics FDC638P-NL 272,000
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    • 1000 $0.253
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    FDC638P Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDC638P Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    FDC638P Fairchild Semiconductor Single P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    FDC638P Fairchild Semiconductor P-Channel 2.5V PowerTrench Specified MOSFET Original PDF
    FDC638P Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    FDC638P Toshiba Power MOSFETs Cross Reference Guide Original PDF
    FDC638P_NF073 Fairchild Semiconductor Single P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    FDC638P_NL Fairchild Semiconductor Single P-Channel 2.5V Specified PowerTrench MOSFET Original PDF

    FDC638P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Marking 638

    Abstract: No abstract text available
    Text: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original
    PDF FDC638P FDC638P NF073 Marking 638

    CBVK741B019

    Abstract: F63TNR FDC633N FDC638P SOIC-16
    Text: June 1999 FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original
    PDF FDC638P OT-23 CBVK741B019 F63TNR FDC633N FDC638P SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: November 1998 FDC638P Single P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    Original
    PDF FDC638P

    Untitled

    Abstract: No abstract text available
    Text: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original
    PDF FDC638P

    SSOT-6

    Abstract: CBVK741B019 F63TNR FDC633N FDC638P
    Text: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original
    PDF FDC638P SSOT-6 CBVK741B019 F63TNR FDC633N FDC638P

    FDC638P

    Abstract: No abstract text available
    Text: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original
    PDF FDC638P FDC638P

    FDC633

    Abstract: CBVK741B019 F63TNR FDC633N FDC638P SOIC-16
    Text: June 1999 FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original
    PDF FDC638P OT-23 FDC633 CBVK741B019 F63TNR FDC633N FDC638P SOIC-16

    6TPA47M

    Abstract: R040 FDC638P CAP 0402 P-MOSFET ADC623A 47uF 63v CR05-103JM DO1608C-472 MOSFET sot23-6
    Text: 5 4 3 2 U1 LTC3801ES6 RUN E1 D D Cc1 220pF Rc1 1 Ith/RUN PGATE 6 E2 10K 2 GND VIN Vin 2.5V-9.8V Cin 10uF 10V 5 Rcs 0.040 Rf2 3 FB S- 4 4 80.6K 1% GND 3 E3 Q1 FDC638P Rf1 174K 1% C 1 2 5 6 C 1 Cf1 opt. L1 1 4.7uH Co2 4.7uF 6.3V opt. 2 D1 MBRM120L E4 + Co1 47uF


    Original
    PDF LTC3801ES6 220pF FDC638P MBRM120L LTC3801ES6, 550kHz MBRM120L, FDC638P, 1/16W, 6TPA47M R040 FDC638P CAP 0402 P-MOSFET ADC623A 47uF 63v CR05-103JM DO1608C-472 MOSFET sot23-6

    Supersot6

    Abstract: Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN
    Text: Discrete MOSFET SuperSOT-6 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SuperSOT-6 N-Channel FDC6401N 20 Dual - 0.07 0.095 - 3.3 3 0.96 FDC6305N 20 Dual - 0.08 0.12 - 3.5


    Original
    PDF FDC6401N FDC6305N FDC637AN FDC6303N FDC6301N FDC6561AN FDC645N FDC638P FDC640P FDC642P Supersot6 Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN

    T101D103-CA

    Abstract: ntc 100-20 K 1358 fet transistor 140-103LAG-RBI T101D103 Fenwal NTC MAX1879 FDC638P MAX1679 MAX1879EUA
    Text: 19-2061; Rev 0; 5/01 ABLE KIT AVAIL N IO T A U L EVA Simple, Efficient, 1-Cell Li+ Pulse Charger Features ♦ Simple Design Minimizes Heat The MAX1879 initiates charging in one of three ways: battery insertion, charger power-up, or toggling the THERM pin. Key safety features include continuous voltage and


    Original
    PDF MAX1879 MAX1879 T101D103-CA ntc 100-20 K 1358 fet transistor 140-103LAG-RBI T101D103 Fenwal NTC FDC638P MAX1679 MAX1879EUA

    FDC638P

    Abstract: J-STD-020A MAX1736 MAX1736EUT41 MAX1736EUT41-T MAX1736EUT42 MAX1736EUT42-T MAX1736EVKIT
    Text: 19-1662; Rev 1; 10/00 KIT ATION EVALU E L B AVAILA SOT23, Single-Cell Li+ Battery Charger for Current-Limited Supply _Applications Single-Cell Li+ Portable Applications Wireless Handsets Personal Digital Assistants Digital Cameras Small Hand-Held Equipment


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    PDF MAX1736 FDC638P J-STD-020A MAX1736 MAX1736EUT41 MAX1736EUT41-T MAX1736EUT42 MAX1736EUT42-T MAX1736EVKIT

    Untitled

    Abstract: No abstract text available
    Text: LTC3736-1 Dual 2-Phase, No RSENSETM, Synchronous Controller with Spread Spectrum FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 3736-1 is a 2-phase dual synchronous stepdown switching regulator controller with tracking that


    Original
    PDF LTC3736-1 550kHz, 16-Lead 28-Lead 10-Pin 37361f

    LTC1772B

    Abstract: No abstract text available
    Text: LTC3772B Micropower No RSENSE Constant Frequency Step-Down DC/DC Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 3772B is a constant frequency current mode step-down DC/DC controller in a low profile 8-lead SOT-23


    Original
    PDF LTC3772B 3772B OT-23 550kHz 850kHz, 16-Lead LTC3808 LTC3809/LTC3809-1 10-Lead LTC1772B

    Untitled

    Abstract: No abstract text available
    Text: LTC3776 Dual 2-Phase, No RSENSETM, Synchronous Controller for DDR/QDR Memory Termination FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 3776 is a 2-phase dual output synchronous stepdown switching regulator controller for DDR/QDR memory


    Original
    PDF LTC3776 LTC3736-1 LTC3737 LTC3831 3776fa

    Untitled

    Abstract: No abstract text available
    Text: 19-1662; Rev 1; 10/00 KIT ATION EVALU E L B AVAILA SOT23, Single-Cell Li+ Battery Charger for Current-Limited Supply The MAX1736 initiates charging in one of four ways: battery insertion, charger power-up, battery voltage threshold, and by external manipulation of the EN pin.


    Original
    PDF MAX1736 MAX1736

    ICS9LP306

    Abstract: Inventec SC7652 KBC1021 Inventec VAIL 2.0 kahuna rqa130n03 1981HD 51117 TP772
    Text: GALLO 1.0 PV BUILD 2006.02.08 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : GALLO 1.0 SIZE CODE A3 CS SHEET REV DOC. NUMBER Model_No 1 OF A01 58 TABLE OF CONTENTS


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    PDF R5000 D5000 R5004 SW5004 21SUYC S5005 S5004 S5001 C5002 1000PF ICS9LP306 Inventec SC7652 KBC1021 Inventec VAIL 2.0 kahuna rqa130n03 1981HD 51117 TP772

    6A4 mic DIODE

    Abstract: r8201 FERR-250-OHM C5100 MOSFET J8200 BS520EOF XW6800 R8202 R6803 C8207
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 04 426972 ENGINEERING RELEASED DATE


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    PDF VR6800 VR8290 XW6800 XW6801 XW6802 XW7100 XW7101 XW7103 XW7200 XW7310 6A4 mic DIODE r8201 FERR-250-OHM C5100 MOSFET J8200 BS520EOF R8202 R6803 C8207

    Q8031

    Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H
    Text: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED


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    PDF ITP700FLEX LIP-SM-M42 Q8031 ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H

    RTL8211E

    Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?


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    PDF ISL10 ISL11 RTL8211E ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055

    Inventec VAIL 2.0

    Abstract: PC9603 Inventec INVENTEC davos INVENTEC DAVOS 3.0 GST5009 C5761 Compaq P58 VSS28 CN5-001
    Text: DAVOS-DF PV-1-BUILD 2004.11.04 EE DATE DATE POWER DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : DAVOS-DF SIZE CODE A3 CS SHEET DOC. NUMBER REV PC9603 1 A01 OF 65 TABLE OF CONTENTS


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    PDF PC9603 OTS144058 10/27---update Inventec VAIL 2.0 PC9603 Inventec INVENTEC davos INVENTEC DAVOS 3.0 GST5009 C5761 Compaq P58 VSS28 CN5-001

    RT9713

    Abstract: C6091 C6093 R61531 c6090 C6085 c6092 inventec vail 1.0 Inventec 070912FR015S200ZU
    Text: VAIL SI2-BUILD-FINAL 2004.08.31 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : VAIL1.0 SIZE CODE A3 CS SHEET DOC. NUMBER REV Model_No 1 OF AX2 67 TABLE OF CONTENTS


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    PDF V/5V/12V) 31-Aug-2004 CN6035 RT9713 C6091 C6093 R61531 c6090 C6085 c6092 inventec vail 1.0 Inventec 070912FR015S200ZU

    kbc1070

    Abstract: fds8884 AM4825P_AP Entery-3802 ICS9LPRS355 Inventec alcor AU6371 CHENMKO_CHPZ6V2_3P fix40 Socket AM2
    Text: DDD UMA SI Build Final 2007.03.30 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : DDD UMA SIZE CODE A3 CS SHEET DOC. NUMBER REV Model_No 1 OF AX1 48 TABLE OF CONTENTS


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    PDF FIX10 FIX11 FIX12 FIX37 FIX38 15-Mar-2007 kbc1070 fds8884 AM4825P_AP Entery-3802 ICS9LPRS355 Inventec alcor AU6371 CHENMKO_CHPZ6V2_3P fix40 Socket AM2

    ISL9504

    Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42
    Text: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT


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    PDF ISL10 ISL11 ISL9504 b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42

    Untitled

    Abstract: No abstract text available
    Text: F /\IR C H II_ D June 1999 M IC D N D U C T D R i FDC638P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    OCR Scan
    PDF FDC638P DC/567