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    SSM10N70 Search Results

    SSM10N70 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSM10N70 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    SSM10N70 Unknown FET Data Book Scan PDF
    SSM10N70A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    SSM10N70A Unknown FET Data Book Scan PDF

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    DIODE S3c

    Abstract: ssm10n70
    Text: SAMSUNG SEM ICO NDUCTOR INC *- SSM10N70 SSH10N70 >.U DE I T T t m M S □□OSB'it. □ W ~ N-CHANNEL * - • r * POWER MOSFETS V - ^ - IS t' Preliminary Specifications PRODUCT SUMMARY 700 Volt, i.a O h m SFET Part Number Vos Rosion Id SSM10N70 700V 1.00


    OCR Scan     		PDF SSM10N70 SSH10N70 SSH10N70 DIODE S3c

    SSM10N06

    Abstract: SSM10N10 SSM10N70 SSM10N70A SSM12N06 SSM12N08 SSM12N10 SSM15N55 SSM15N55A SSM15N60
    Text: - 312 - ft 1Sü s tt € * Vd s or £ Vg s V % (13=25*0) Ig s s Pd Id Vg s I dss th) ft '14 Ds(on) Vds = (Ta=25°C) g fs I d (o o ) Ciss Coss Crss (*typ) (*typ) (*typ) (V) * /CH * /CH (A) m Vg s (nA) (V) min max (V) (V) Vd s (MA) (V) (max) (max) (max) Vd s


    OCR Scan     		PDF SSM10N06 SSM10K08 SSM10N10 SSM10N700 SSM25K40A SSM40N15 SSM40N15A SSM40N20 SSM40N20A 7O65J SSM10N70 SSM10N70A SSM12N06 SSM12N08 SSM12N10 SSM15N55 SSM15N55A SSM15N60

    PA 0016 PIONEER

    Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
    Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete


    OCR Scan     		PDF J-23548 K28742 PA 0016 PIONEER Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431

    SSH10N70

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS SSH10N70 FEATURES • Low er Rds <on • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF SSH10N70 SSM10N70 SSH10N70