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    SRAM 681000 Search Results

    SRAM 681000 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    27S03ADM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy
    29705/BXA Rochester Electronics LLC 29705 - SRAM Visit Rochester Electronics LLC Buy
    29705APCB Rochester Electronics LLC 29705A - SRAM Visit Rochester Electronics LLC Buy
    27S03ALM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy

    SRAM 681000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEC D2732

    Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
    Text: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256


    Original     		PDF 71C256 53C256 81C1000 71C1000 4C1024 81C4256 71C4256 4C4256 71C4400 4C4001 NEC D2732 41C1000 41256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732

    Untitled

    Abstract: No abstract text available
    Text: KM681000BLI/BLI-L CMOS SRAM 128Kx8 Bit Industrial Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Tem perature Range : -40 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power D issipation Standby (CMOS) : 550^W (Max.)L-Ver.


    OCR Scan     		PDF KM681000BLI/BLI-L 128Kx8 385mW KM681000BLGI/BLGI-L 32pin 525mil) 681000BLTI/BLTI-L 0820F) KM681000BLRI/BLRI-L

    Untitled

    Abstract: No abstract text available
    Text: KM681000BLE / BLE-L CMOS SRAM 128Kx8 Bit Extended Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CM O S): 550nW(Max.)L-Ver.


    OCR Scan     		PDF KM681000BLE 128Kx8 550nW 275pW 385mW KM681000BLGE/BLGE-L 32-pin 525mil) KM681000BLTE/BLTE-L

    A13CH

    Abstract: km6810008 A12CZ KM681000BLI km6810008l
    Text: CMOS SRAM KM681000BLI / BLI-L 128Kx8 Bit Industrial Temperature Range Operating SRAM GENERAL DESCRIPTION FEATURES • Industrial Tem perature R ange : -40 to 8 5°C • Fast Access Tim e : 7 0 ,1 0 0 ns M ax. • Low Pow er Dissipation Standby (C M O S ) : 5 5 0 pW (M ax.)L -V er.


    OCR Scan     		PDF KM681000BLI 128Kx8 550pW 385mW KM681000BLGI/BLG 32pin 525mil) KM681000BLTI/BLTI-L 0820F) A13CH km6810008 A12CZ km6810008l

    68 1103

    Abstract: KM681000BL A14F
    Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced


    OCR Scan     		PDF KM681000BL 128Kx8 385mW KM681OOOBLP/BLP-L 600mil) KM681000BLG/BLG-L: 525mil) KM681OOOBLT/BLT-L 0820F) KM681000BLR/BLR-L: 68 1103 A14F

    681000CLP

    Abstract: P55n 681000C 2U27 0-00C M681000CL
    Text: Advance Information KM681000C Family CMOS SRAM 128Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS • Organization : 128Kx8 • Power Supply Voltage : Single 5V +/-10% The KM681000C family is fabricated


    OCR Scan     		PDF KM681000C 128Kx8 128Kx8 32-DIP, 32-SOP, 32-TSOP KM681000CL 681000CLP P55n 681000C 2U27 0-00C M681000CL

    cs1g

    Abstract: No abstract text available
    Text: KM681000ALI/ALI-L CM O S SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 4 0 to 85°C The KM 681000ALI/ALI-L is a 1,048,576-bit high-speed S ta tic R and o m A c c e s s M em ory o rganized as 131,072


    OCR Scan     		PDF KM681000ALI/ALI-L 100ns 110mW KM681000ALPI/ALPI-L: 32-pin 600mil) KM681000ALGI/ALGI-L: 525mil) 681000ALI/ALI-L cs1g

    Untitled

    Abstract: No abstract text available
    Text: KM681000B Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft for com m ercial product - Com mercial Product only O ctober 28th, 1992 Prelim inary 0.1 - Initial draft for Extended/Industrial Product


    OCR Scan     		PDF KM681000B 0820F) 0820R)

    csi-2

    Abstract: 256X8
    Text: KM681OOOALPI/ALGI CMOS SRAM 128Kx8 Bit Static RAM Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 4 0 to 8 5 ° C • Fast Access Tim e: 70,100 ns (Max.) • Low Power D issipation Standby (CMOS) : 550MW (M ax.) L-\fer.


    OCR Scan     		PDF KM681OOOALPI/ALGI 128Kx8 -40to85Â 550MW 275/iW 110mW KM681000ALPI/ALPI-L: 32-Pin KM681000ALGI/ALGI-L: csi-2 256X8

    km681000lp

    Abstract: KM681000LG KM681 km681000l
    Text: KM681000L/KM681000L-L CMOS SRAM 128K X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 100, 120ns max. • Low Power Dissipation — Standby (CMOS): 10|jW (typ.) L-Version 5^iW(typ.) L-L Version — O perating : 110mW/MHz (max.)


    OCR Scan     		PDF KM681000L/KM681000L-L 120ns 110mW/MHz 50/jA KM681000LP/LP-L: KM681000LG/LG-L: 681000L/L-L km681000lp KM681000LG KM681 km681000l

    km681000Alp

    Abstract: KM681000A
    Text: CMOS SRAM KM681000AL/KM681OOOAL-L 1 2 8 K X 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 70,85,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10|iW (typ.) L-Version 5(jW (typ.) LL-Version Operating : 35mW (typ.) • Single 5 V ± 10% Power Supply


    OCR Scan     		PDF KM681000AL/KM681OOOAL-L KM681000ALP/ALP-L: 600mil) KM681 525mil) KM681OOOALT/ALT-L KM681000ALR/ALR-L KM681OOOAL/AL-L 576-bit KM681000AL/KM681000AL-L km681000Alp KM681000A

    681000BLP-7L

    Abstract: 681000BLP B8100 KM681000BI 681000BLG
    Text: KM681000B Family CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES G EN ER A L DESCRIPTION • Process Technology: 0.6nm C M O S • Organization: 128Kx8 • Power Supply Voltaga: Single 5.0V±10 % • Low Date Retention Voltage : 2V Mln • Three state output and TTL Compatible


    OCR Scan     		PDF KM681000B 128Kx8 32-DIP-600 32-SOP-525 32-TSQP1-0820F/R 681000BLP-7L 681000BLP B8100 KM681000BI 681000BLG

    sram 681000

    Abstract: KM681000ELG-5L KM681000
    Text: Preliminary KM681000E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. 0.0 H istory Draft Data Remark Design target October 12, 1998 Prelim inary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and


    OCR Scan     		PDF KM681000E 128Kx8 600mil) 525mil) 0820F) sram 681000 KM681000ELG-5L KM681000

    KM681000AL-L

    Abstract: KM681000ALT
    Text: CMOS SRAM KM681000AL/KM681OOOAL-L 128K X8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85,100,120ns max. • Low Power Dissipation Standby (CMOS): 1 0/j W (typ.) L-Version 5piW (typ.) LL-Version O perating : 35m W (typ.) • Single 5 V ± 1 0 % Power Supply


    OCR Scan     		PDF KM681000AL/KM681OOOAL-L 120ns 81000A KM681OOOALG/ALG-L: KM681000ALT/ALT-L KM681OOOALR/ALR-L: KM681OOOAL/AL-L 576-bit KM681000AL/KM681000AL-L KM681000AL-L KM681000ALT

    SR62256EM-70LL

    Abstract: SCM2114-4 SR621024LLP55M 6264LP-70 6264-70 62256lp-70 SRAM SR621024D-70LL SR614008VHSA15J SR621024LLP55T
    Text: HHTEPTEKC Ten: 495 739-09-95, 644-41-29 e le C tfO n iC S MMKpocxeMbi CTaTMHecKOM naM^TM SRAM n o MHflMBMflyanbHOMy 3aKa3y npeflnaraeM TaKwe A pyr^e MMKpocxeMbi naMATM SR AM . Bonee noflpoÖHaa MH#opMau,Mfl - b HaweM OTflene npoflaw. Kofl: OnMcaHMe 62256A L J-10-S M D


    OCR Scan     		PDF 62256ALJ-10-SMD 62256LP-70 DIP28 6264LP-70 SM681000LLP07M SR6116LP-100 DIP24 SR621024D-70LL SR62256EM-70LL SCM2114-4 SR621024LLP55M 6264-70 SRAM SR614008VHSA15J SR621024LLP55T

    KM681000ALT

    Abstract: km681000Alp 681000
    Text: KM681000AL/KM681000AL-L CMOS SRAM 1 2 8 K X 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 70,85,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L-Version 5^W (typ.) LL-Version Operating : 35m W (typ.) • Single 5 V ± 10% Power Supply


    OCR Scan     		PDF KM681000AL/KM681000AL-L KM681000ALP/ALP-L 681000ALG/ALG-L: KM681000ALT/ALT-L 681000ALR KM681OOOAL/AL-L M000AL/KM681000AL-L 0820F) KM681000ALT km681000Alp 681000

    132SA

    Abstract: km681000a
    Text: SAMSUNG ELECTRONICS INC b4E D • 7'ìt.mMS 0 0 1 4 G 1 5 Ü61 ■ SMGK KM681OOOALI/ALI-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 40 to 85°C • Fast Access Time: 70, 100ns Max. • Low Power Dissipation


    OCR Scan     		PDF KM681OOOALI/ALI-L 100ns 275/iW 110mW KM681OOOALPI/ALPIL: 32-pin 600mil) KM681000ALGI/ALGI-L: 525mii) 132SA km681000a

    0820R

    Abstract: KM62256B
    Text: KM681OOOBLI/BLI-L ~l3 1 , 0 V2 W O R D X CMOS SRAM 8 B it C M O S S ts tic R A M Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns(max.) • Low Power Dissipation


    OCR Scan     		PDF KM681OOOBLI/BLI-L 100ns 275/iW 110mW KM681000BLGI/BLG-L KM681000BLTI/BLTI-L KM681000BLRI/BLRI-L 32-SOP-525 32-TSOP1-0820F 32-TSOP1 0820R KM62256B

    km681000alt

    Abstract: No abstract text available
    Text: SAMSUNG EL EC T R O N I C S INC b7E D • 7^4145 KM681000AL/KM681000AL-L QÜ17SDS 70T « S r i G K CMOS SRAM 1 2 8 K X 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85,100,120ns max. • Low Power Dissipation Standby (CMOS): 1 0/jW (typ.) L-Version


    OCR Scan     		PDF KM681000AL/KM681000AL-L 17SDS 120ns 81000A KM681000ALT/ALT-L 0017S10 ib414B 0D17511 km681000alt

    km681000lp

    Abstract: No abstract text available
    Text: SAMSUNG E L E C T R O N I C S INC b4E ]> • 7^4142 KM681000L/KM681000L-L 0 D1 3 eì cì b 521 SMGK CMOS SRAM 128K X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70, 85, 100, 120ns max. • Low Power Dissipation -S ta n d b y (CMOS): lO^W (typ.) L-Version


    OCR Scan     		PDF KM681000L/KM681000L-L 120ns 110mW/MHz 681000L/L-L D014004 km681000lp

    Untitled

    Abstract: No abstract text available
    Text: K M 681 OOOC Fami l y CMOS SRAM P s c u m e n î Title 1 28K x8 bit Low Power C M O S Static RAM Révision History Revisio n No. Histo ry Draft D a te 0.0 Initial d ra ft N o ve m b e r 22th 1995 0.1 First re visio n Remark D esign ta rg e t A pril 15th 1996


    OCR Scan     		PDF

    KM681000BLP-7L

    Abstract: KM681000B KM681000BL
    Text: KM681000B Family CMOS SRAM D o cu m en t Title 128K x8 bit Low Power CMOS Static RAM R é visio n H is to ry Revision No. History Draft Data Rem ark 0 .0 Initial d ra ft fo r c o m m e rc ia l p ro d u c t - C o m m e rc ia l P ro d u c t o n ly O c to b e r 28 th, 1992


    OCR Scan     		PDF KM681000B 100ns 0820F) 0820R) KM681000BLP-7L KM681000BL

    KM28C64A

    Abstract: No abstract text available
    Text: TABLE OF COm-ENTS FUNCTION GUIDE 1. 2. 3. 4. Introduction. 11 Product G uide. 19


    OCR Scan     		PDF KM75C03A. KM75C101A. KM75C102A. KM75C103A. KM75C104A. KM28C64A

    "30 pin simm"

    Abstract: 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm
    Text: FUNCTION GUIDE MEMORY ICs 2.2 Dynamic RAM Module Continued Based Component 16M DRAM Base 2.3 Part Number Organization KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8M x 36 8Mx36 8M X 36


    OCR Scan     		PDF KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8Mx36 "30 pin simm" 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm