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    SQ741 Price and Stock

    Vishay Siliconix SQ7414CENW-T1_GE3

    MOSFET N-CH 60V 18A PPAK1212-8W
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    DigiKey SQ7414CENW-T1_GE3 Digi-Reel 21,856 1
    • 1 $1.48
    • 10 $0.932
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    SQ7414CENW-T1_GE3 Cut Tape 21,856 1
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    SQ7414CENW-T1_GE3 Reel 18,000 3,000
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    Quest Components SQ7414CENW-T1_GE3 2,868
    • 1 $1.2
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    New Advantage Corporation SQ7414CENW-T1_GE3 15,000 1
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    Vishay Siliconix SQ7415CENW-T1_GE3

    AUTOMOTIVE P-CHANNEL 60-V (D-S)
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    DigiKey SQ7415CENW-T1_GE3 Cut Tape 9,373 1
    • 1 $1.36
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    SQ7415CENW-T1_GE3 Digi-Reel 9,373 1
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    • 100 $1.36
    • 1000 $0.40409
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    SQ7415CENW-T1_GE3 Reel 9,000 3,000
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    New Advantage Corporation SQ7415CENW-T1_GE3 3,000 1
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    Vishay Siliconix SQ7414AEN-T1_BE3

    MOSFET N-CH 60V 5.6A PPAK 1212-8
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    DigiKey SQ7414AEN-T1_BE3 Reel 3,000
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    Vishay Siliconix SQ7414AEN-T1_GE3

    MOSFET N-CH 60V 16A PPAK1212-8
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    DigiKey SQ7414AEN-T1_GE3 Cut Tape 1
    • 1 $1.24
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    SQ7414AEN-T1_GE3 Reel 3,000
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    SQ7414AEN-T1_GE3 Digi-Reel 1
    • 1 $1.24
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    Vishay Siliconix SQ7415AEN-T1_GE3

    MOSFET P-CH 60V 16A PPAK1212-8
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    SQ7415AEN-T1_GE3 Digi-Reel 1
    • 1 $0.84
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    Find more SQ741 price and stock on Findchips.com

    SQ741 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SQ741 Polyfet RF Devices SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Original PDF
    SQ7414AEN-T1_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 5.6A PPAK 1212-8 Original PDF
    SQ7414AENW-T1_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 18A POWERPAK1212 Original PDF
    SQ7414CENW-T1_GE3 Vishay Siliconix MOSFET N-CH 60V 18A PPAK1212-8W Original PDF
    SQ7414EN-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 5.6A PPAK 1212-8 Original PDF
    SQ7415AEN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 16A 1212-8 Original PDF
    SQ7415AEN-T1_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 60V 16A 1212-8 Original PDF
    SQ7415AENW-T1_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 60V 16A POWERPAK1212 Original PDF
    SQ7415EN-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 3.6A PPAK 1212-8 Original PDF

    SQ741 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAR 826

    Abstract: No abstract text available
    Text: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC


    Original     		PDF SQ7415AEN IEC61249-2-21 AEC-Q101 2002/95/EC SQ7415AEN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MAR 826

    Untitled

    Abstract: No abstract text available
    Text: SQ7415EN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile • Fast Switching • AEC-Q101 Qualified


    Original     		PDF SQ7415EN AEC-Q101 2002/95/EC SQ7415EN-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    AECQ101

    Abstract: No abstract text available
    Text: SQ7415EN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) - 60 ID (A) 0.065 at VGS = - 10 V - 5.7 0.110 at VGS = - 4.5 V - 4.4 • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile


    Original     		PDF SQ7415EN AECQ101 SQ7415EN-T1 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () at VGS = - 10 V 0.065 RDS(on) () at VGS = - 4.5 V 0.090 ID (A) - 16 Configuration Single PowerPAK 1212-8 S S 3.30 mm


    Original     		PDF SQ7415AEN AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC


    Original     		PDF SQ7415AEN IEC61249-2-21 AEC-Q101 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    AECQ101

    Abstract: SQ7414EN SQ7414EN-T1
    Text: SQ7414EN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8.7 0.036 at VGS = 4.5 V 7.3 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® 1212-8 Package with Low 1.07 mm Profile


    Original     		PDF SQ7414EN AECQ101 SQ7414EN-T1 08-Apr-05 SQ7414EN SQ7414EN-T1

    Untitled

    Abstract: No abstract text available
    Text: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC


    Original     		PDF SQ7415AEN IEC61249-2-21 AEC-Q101 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQ7414EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® 1212-8 Package with 1.07 mm Profile • PWM Optimized • AEC-Q101 Qualified


    Original     		PDF SQ7414EN AEC-Q101 2002/95/EC SQ7414EN-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQ7414AEN www.vishay.com Vishay Siliconix N-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SQ7414AEN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQ7414EN Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) (Ω) at VGS = 10 V 0.025 RDS(on) (Ω) at VGS = 4.5 V 0.036 ID (A) • New Low Thermal Resistance PowerPAK® 1212-8 Package with 1.07 mm Profile


    Original     		PDF SQ7414EN 2002/95/EC AEC-Q101 PowerPAK1212-8 SQ7414EN-T1-E3 11-Mar-11

    AN609

    Abstract: No abstract text available
    Text: SQ7415EN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SQ7415EN AN609 05-Oct-07

    SQ7415EN-T1-E3

    Abstract: No abstract text available
    Text: SQ7415EN Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Power MOSFET VDS (V) - 60 RDS(on) (Ω) at VGS = - 10 V 0.065 RDS(on) (Ω) at VGS = - 4.5 V 0.110 • PowerPAK® Package - Low Thermal Resistance, RthJC


    Original     		PDF SQ7415EN 2002/95/EC AEC-Q101 121lectual 18-Jul-08 SQ7415EN-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: SQ7414AEN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V 0.026 RDS(on) () at VGS = 4.5 V 0.036 ID (A) • Low Thermal Resistance PowerPAK® 1212-8


    Original     		PDF SQ7414AEN AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SQ7414

    Abstract: si7401
    Text: SQ7414EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® 1212-8 Package with 1.07 mm Profile • PWM Optimized • AEC-Q101 Qualified


    Original     		PDF SQ7414EN AEC-Q101 2002/95/EC SQ7414EN-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQ7414 si7401

    SQ7414EN-T1-E3

    Abstract: No abstract text available
    Text: SQ7414EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® 1212-8 Package with 1.07 mm Profile • PWM Optimized • AEC-Q101 Qualified


    Original     		PDF SQ7414EN AEC-Q101 2002/95/EC PowerPAK1212-8 SQ7414EN-T1-E3 11-Mar-11 SQ7414EN-T1-E3

    74869

    Abstract: SQ7414EN SQ741
    Text: SPICE Device Model SQ7414EN Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SQ7414EN 18-Jul-08 74869 SQ7414EN SQ741

    Untitled

    Abstract: No abstract text available
    Text: SQ7414AENW www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET 60 RDS(on) (Ω) at VGS = 10 V 0.023 RDS(on) (Ω) at VGS = 4.5 V 0.028 ID (A) • Low thermal resistance PowerPAK® 1212-8


    Original     		PDF SQ7414AENW AEC-Q101 212-8W 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQ7414AENW_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SQ7414AENW AN609, 3190m 9557u 5717m 9278m 2352m 5495m 26-Aug-14

    SQ7414EN

    Abstract: SQ7414EN-T1-E3
    Text: SQ7414EN Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) (Ω) at VGS = 10 V 0.025 RDS(on) (Ω) at VGS = 4.5 V 0.036 ID (A) • New Low Thermal Resistance PowerPAK® 1212-8 Package with 1.07 mm Profile


    Original     		PDF SQ7414EN 2002/95/EC AEC-Q101 PowerPAK1212-8 18-Jul-08 SQ7414EN SQ7414EN-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: SQ7414AEN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V 0.026 RDS(on) () at VGS = 4.5 V 0.036 ID (A) • Low Thermal Resistance PowerPAK® 1212-8


    Original     		PDF SQ7414AEN AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC


    Original     		PDF SQ7415AEN IEC61249-2-21 AEC-Q101 2002/95/EC SQ7415AEN-T1-GE3 11-Mar-11

    SQ7414EN-T1-E3

    Abstract: No abstract text available
    Text: SQ7414EN Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) (Ω) at VGS = 10 V 0.025 RDS(on) (Ω) at VGS = 4.5 V 0.036 ID (A) • New Low Thermal Resistance PowerPAK® 1212-8 Package with 1.07 mm Profile


    Original     		PDF SQ7414EN 2002/95/EC AEC-Q101 PowerPAK1212-8 SQ7414EN-T1-E3 18-Jul-08 SQ7414EN-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: SQ7415AEN Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition - 60 RDS(on) () at VGS = - 10 V 0.065 RDS(on) () at VGS = - 4.5 V 0.090 ID (A) - 16 Configuration


    Original     		PDF SQ7415AEN IEC61249-2-21 2002/95/EC AEC-Q101 SQ7415AEN-T1-GE3 11-Mar-11

    SQ741

    Abstract: VDMOS
    Text: polyfet rf devices SQ741 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SQ741 SQ741 VDMOS