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    SPA13 Price and Stock

    Broadcom Limited QDSP-A133

    DISPLAY S4
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    DigiKey QDSP-A133 Bulk
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    Rochester Electronics LLC SPA13003-S-AC

    BIP NPN 1A 400V
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    DigiKey SPA13003-S-AC Bulk 5,323
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    Aptina Imaging SPA13003-S-AC

    SPA13003-S-AC
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    Verical SPA13003-S-AC 25,000 6,508
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    Mersen Electrical Power SPA130

    Shaft, Pistol Handle, For UL508 Non-Fusible Disconnect Switch, V1043919,6x6x130mm | Mersen SPA130
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    RS SPA130 Bulk 1 12 Weeks 1
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    OPTIBELT GmbH SPA1382

    Optibelt SK, SPA Belt Section, 12.7mm Width, 1382mm Length | Optibelt SPA1382
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    RS SPA1382 Bulk 1 Weeks 1
    • 1 $18.15
    • 10 $17.24
    • 100 $15.43
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    SPA13 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPA-1318 RFMD RF/IF and RFID - RF Amplifiers - IC AMP PCS 2.11GHZ-2.17GHZ 8SOIC Original PDF
    SPA-1318 Sirenza Microdevices RF Amplifiers, RF/IF and RFID, IC AMP HBT GAAS 2150MHZ 8-SOIC Original PDF
    SPA-1318 Stanford Microdevices 2150 MHz 1 watt power amplifier with active bias. Original PDF

    SPA13 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor sw 13003

    Abstract: sw 13003 REGULATOR sw 13003 A1402 13003 TRANSISTOR SPA13003 REGULATOR 13003 13003 TRANSISTOR PC 13003 TRANSISTOR spa13
    Text: SPA13003 Ordering number : ENA1402 SANYO Semiconductors DATA SHEET SPA13003 13003 series NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process.


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    PDF SPA13003 ENA1402 A1402-4/4 transistor sw 13003 sw 13003 REGULATOR sw 13003 A1402 13003 TRANSISTOR SPA13003 REGULATOR 13003 13003 TRANSISTOR PC 13003 TRANSISTOR spa13

    transistor sw 13003

    Abstract: REGULATOR sw 13003 A1402 13003 TRANSISTOR sw 13003 PC 13003 TRANSISTOR 13003 NPN Transistor features
    Text: SPA13003 Ordering number : ENA1402A SANYO Semiconductors DATA SHEET SPA13003 13003 series NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process.


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    PDF SPA13003 ENA1402A A1402-4/4 transistor sw 13003 REGULATOR sw 13003 A1402 13003 TRANSISTOR sw 13003 PC 13003 TRANSISTOR 13003 NPN Transistor features

    A1402

    Abstract: spa13003 SW 13003 A1-4024 spa13 a-1402 TF 13003
    Text: SPA13003 注文コード No. N A 1 4 0 2 A 三洋半導体データシート 半導体データシート No.NA1402 をさしかえてください。 SPA13003 13003 series NPN 三重拡散プレーナ型シリコントランジスタ スイッチング電源用


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    PDF SPA13003 NA1402 IT13702 IT14369 IT14417 A1402-3/4 IT14370 A1402-4/4 A1402 spa13003 SW 13003 A1-4024 spa13 a-1402 TF 13003

    S1298

    Abstract: 1318
    Text: Preliminary Product Description SPA-1318 Stanford Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


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    PDF SPA-1318 SPA-1318 Active08 AN-029 EDS-101429 S1298 1318

    Untitled

    Abstract: No abstract text available
    Text: Product Description SPA-1318 Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


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    PDF SPA-1318 SPA-1318 EDS-101429

    MCH18

    Abstract: MCR03 SPA-1318 TAJB106K020R
    Text: Product Description SPA-1318 This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 2150 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. 2150 MHz 1 Watt Power Amplifier


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    PDF SPA-1318 SPA-1318 EDS-101429 MCH18 MCR03 TAJB106K020R

    SPA-1318

    Abstract: No abstract text available
    Text: Preliminary Product Description SPA-1318 Stanford Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


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    PDF SPA-1318 SPA-1318 Consumpt003 AN-029 EDS-101429

    QAL-09-1007

    Abstract: No abstract text available
    Text: Process Change Notification PCN Form QAL-09-1007 Revision H Instructions Reference ¾ QAL-09-1006 for detailed instructions and an outline of the process. Acknowledge PCNs by e-mailing [email protected]. E-mail any questions to [email protected]. Lack of acknowledgement of the PCN


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    PDF QAL-09-1007 QAL-09-1006 90day SPA-1426Z

    2005Z

    Abstract: TRANSISTOR a105 a105 transistor 2005 Z 2005.z SXA3318BZ JESD22-A113C spa2318z JESD22-A-102 JESD22-A104B
    Text: Reliability Qualification Report SPA-2318 - SnPb Plated SPA-2318Z - Matte Sn, RoHS compliant Products Qualified by Similarity SPA-1118 SPA-1218 SPA-1318 SPA-2118 SXA-3318B SPA-1118Z SPA-1218Z SPA-1318Z SPA-2118Z SXA-3318BZ The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for


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    PDF SPA-2318 SPA-2318Z SPA-1118 SPA-1218 SPA-1318 SPA-2118 SXA-3318B SPA-1118Z SPA-1218Z SPA-1318Z 2005Z TRANSISTOR a105 a105 transistor 2005 Z 2005.z SXA3318BZ JESD22-A113C spa2318z JESD22-A-102 JESD22-A104B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SPA-1318 Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


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    PDF SPA-1318 SPA-1318 EDS-101429

    HP COMPAQ MOTHERBOARD CIRCUIT diagram

    Abstract: hp 530 motherboard circuit and solution WAC25 svc 471-10 svc 471-14 hp 530 motherboard power supply solution shugart Am53C974A amd pin out SCSI pin assign
    Text: Am53C974A PCSCSITM II Technical Manual Revision 1.0 A D V A N C E D M I C R O D E V I C E S  1994 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products without notice in order to improve design or performance characteristics.


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    PDF Am53C974A HP COMPAQ MOTHERBOARD CIRCUIT diagram hp 530 motherboard circuit and solution WAC25 svc 471-10 svc 471-14 hp 530 motherboard power supply solution shugart amd pin out SCSI pin assign

    RD1004

    Abstract: 2SC5707 2sK4096 ECH81 rd1004ls 2SK4101 tf252th SFT1443 vf10bm3 RD2006
    Text: ディスクリートデバイス 2010-7 環境にやさしい製品 超アナログ技術を極めるPower &RFデバイス Power 電 源 市 場 耐熱性 高アバランシェ 高耐圧・大電流 高効率 高ESD ・パワーマネジメント (LCDPDP、PC電源、照明)


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    PDF CDMA2000] 3-7300Fax OVA21 052-453-1331Fax 06-6353-3361Fax 03-5701-1111Fax 078-928-8010Fax 078-331-8400Fax 075-371-4058Fax 052-459-3501Fax RD1004 2SC5707 2sK4096 ECH81 rd1004ls 2SK4101 tf252th SFT1443 vf10bm3 RD2006

    RD2004

    Abstract: 2SK4087 2SK4097 2sk4086 2SC5707 2sk4096 SBX201C 2SC5706 2sk3615 half-bridge power supply
    Text: ディスクリートデバイス 2009-4 三洋ディスクリートデバイス 環境に配慮した三洋ディスクリートデバイス ECoP R ディスクリートデバイスExPD パワーデバイス)は、 様々な分野の機器の小型化・薄型化・高効率化・高信頼性化に


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    PDF 3LN02M LV2282VA EC2C01C SVC710 SVC707 ECSP1008-2 P124A RD2004 2SK4087 2SK4097 2sk4086 2SC5707 2sk4096 SBX201C 2SC5706 2sk3615 half-bridge power supply

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SPA-1318 Stanford Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


    Original
    PDF SPA-1318 SPA-1318 AN-029 EDS-101429

    Flyback Transformers SANYO TV

    Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams
    Text: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)


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    PDF CDMA2000] Flyback Transformers SANYO TV RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams

    m 213 exposed pad

    Abstract: LL1608-FSR27J LL1608-FS18NJ SPA-1318 m 213 exposed pad 5v rf amp ECB-101161
    Text: Advanced Information Product Description SPA-1318 Stanford Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


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    PDF SPA-1318 SPA-1318 AN-029 m 213 exposed pad LL1608-FSR27J LL1608-FS18NJ m 213 exposed pad 5v rf amp ECB-101161

    MCH18

    Abstract: ECB-101161 spa-1318
    Text: Preliminary Product Description SPA-1318 Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial


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    PDF SPA-1318 SPA-1318 d1318 EDS-101429 MCH18 ECB-101161

    RF5632

    Abstract: PNP-1090-P22 UMX-254-D16-G UMX-333-D16-G RF1194 UMX-406-D16 SPF-5043Z UMX-519-D16-G SHF-0289 spf-5122z
    Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product


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    pnp-1500-p22

    Abstract: UMZ-1147-R16-G RF5632 UMX-254-D16-G SPA-1002-27H UMX-119-D16-G spf-5189z ums-2000-A16-g spf-5122 UMX-406-D16
    Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product


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    PDF