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    SOT666 PACKAGE Search Results

    SOT666 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    SOT666 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PESDXL5UV

    Abstract: SOT666 package philips diode arrays
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PESD3V3L5UV; PESD5V0L5UV Low capacitance 5-fold ESD protection diode arrays in SOT666 package Product specification 2004 Mar 23 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package


    Original     		PDF M3D744 OT666 OT666 SCA76 R76/01/pp11 PESDXL5UV SOT666 package philips diode arrays

    PBLS4003V

    Abstract: transistor PDTC PBLS1501V PBLS1503V transistor sc 308 PBLS4001V PBLS4001Y PBLS1501Y PBLS1503Y Philips pmeg
    Text: AN10361 Philips BISS loadswitch solutions and the SOT666 BISS loadswitch demo board Rev. 01.00 — 20 June 2005 Application note Document information Info Content Keywords BISS, loadswitch, high side switch, supply line switch, SOT666, low VCEsat, RET Abstract


    Original     		PDF AN10361 OT666 OT666, PBLS4003V transistor PDTC PBLS1501V PBLS1503V transistor sc 308 PBLS4001V PBLS4001Y PBLS1501Y PBLS1503Y Philips pmeg

    BAT54CV

    Abstract: SOT-666
    Text: BAT54CV Two Schottky barrier double diodes in ultra small SOT666 package Rev. 01 — 22 September 2004 Objective data sheet 1. Product profile 1.1 General description Two planar Schottky barrier double diodes with common cathodes and an integrated guard ring for stress protection encapsulated in a SOT666 ultra small SMD plastic


    Original     		PDF BAT54CV OT666 OT666 BAT54CV SOT-666

    BAT54VV

    Abstract: No abstract text available
    Text: BAT54VV Schottky barrier triple diode in ultra small SOT666 package Rev. 01 — 14 September 2004 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small


    Original     		PDF BAT54VV OT666 BAT54VV

    Untitled

    Abstract: No abstract text available
    Text: BAT54VV Schottky barrier triple diode in ultra small SOT666 package Rev. 02 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small


    Original     		PDF BAT54VV OT666 BAT54VV

    SOT666

    Abstract: BAT54CV
    Text: BAT54CV Two Schottky barrier double diodes in ultra small SOT666 package Rev. 02 — 15 January 2010 Objective data sheet 1. Product profile 1.1 General description Two planar Schottky barrier double diodes with common cathodes and an integrated guard ring for stress protection encapsulated in a SOT666 ultra small SMD plastic


    Original     		PDF BAT54CV OT666 OT666 BAT54CV SOT666

    BAT54VV

    Abstract: diode marking 14
    Text: BAT54VV Schottky barrier triple diode in ultra small SOT666 package Rev. 02 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small


    Original     		PDF BAT54VV OT666 BAT54VV diode marking 14

    BAS70VV

    Abstract: No abstract text available
    Text: BAS70VV 70 V, 70 mA Schottky barrier triple isolated diode in SOT666 Rev. 01 — 10 September 2004 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small


    Original     		PDF BAS70VV OT666 OT666 BAS70VV

    SMD MARKING CODE 2M

    Abstract: PMEG3002TV
    Text: PMEG3002TV 0.2 A very low VF MEGA Schottky barrier dual rectifier in SOT666 package Rev. 02 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier dual rectifier


    Original     		PDF PMEG3002TV OT666 OT666 PMEG3002TV SMD MARKING CODE 2M

    PMEG3002TV

    Abstract: No abstract text available
    Text: PMEG3002TV 0.2 A very low VF MEGA Schottky barrier dual rectifier in SOT666 package Rev. 01 — 21 October 2005 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier dual rectifier


    Original     		PDF PMEG3002TV OT666 OT666 PMEG3002TV

    Untitled

    Abstract: No abstract text available
    Text: PMEG3002TV 0.2 A very low VF MEGA Schottky barrier dual rectifier in SOT666 package Rev. 02 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier dual rectifier


    Original     		PDF PMEG3002TV OT666 OT666 PMEG3002TV

    NXP SMD TRANSISTOR MARKING CODE

    Abstract: PMBT3906VS smd "code rc" transistor transistor smd code marking 102 ZI Marking Code transistor
    Text: PMBT3906VS 40 V, 200 mA PNP/PNP switching transistor Rev. 01 — 20 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device SMD plastic package.


    Original     		PDF PMBT3906VS OT666 PMBT3906VS PMBT3904VS PMBT3946VPN AEC-Q101 771-PMBT3906VS115 NXP SMD TRANSISTOR MARKING CODE smd "code rc" transistor transistor smd code marking 102 ZI Marking Code transistor

    BCP55

    Abstract: BCX55 PBSS4160V PBSS5160V
    Text: PBSS4160V 60 V, 1 A NPN low VCEsat BISS transistor Rev. 01 — 23 April 2004 Objective data sheet 1. Product profile 1.1 General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. 1.2 Features • ■ ■


    Original     		PDF PBSS4160V OT666 PBSS5160V. BCP55 BCX55. BCX55 PBSS4160V PBSS5160V

    transistor smd zc ce

    Abstract: marking code my SMD Transistor npn transistor smd zc TRANSISTOR SMD MARKING CODES transistor smd code marking 102 TRANSISTOR SMD MARKING CODE K TRANSISTOR SMD MARKING CODE NXP SMD TRANSISTOR MARKING CODE smd transistor zc marking code BV SMD Transistor
    Text: PMBT3904VS 40 V, 200 mA NPN/NPN switching transistor Rev. 01 — 8 July 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device SMD plastic package.


    Original     		PDF PMBT3904VS OT666 OT666 PMBT3906VS PMBT3946VPN PMBT3904VS transistor smd zc ce marking code my SMD Transistor npn transistor smd zc TRANSISTOR SMD MARKING CODES transistor smd code marking 102 TRANSISTOR SMD MARKING CODE K TRANSISTOR SMD MARKING CODE NXP SMD TRANSISTOR MARKING CODE smd transistor zc marking code BV SMD Transistor

    LD39015M25R

    Abstract: No abstract text available
    Text: LD39015 150 mA low quiescent current and low noise voltage regulator Datasheet - production data • Logic-controlled electronic shutdown • Compatible with ceramic capacitors CO = 1 µF • Internal current and thermal limit • Available in SOT666 and SOT23-5L packages


    Original     		PDF LD39015 OT666 OT23-5L OT666 OT23-5L LD39n DocID14003 LD39015M25R

    st marking flash

    Abstract: JESD97
    Text: ESDALC6V1-5P6 ESD protection for high speed interface Features • Diode array topology ■ Low capacitance 12 pF typical ■ Lead-free package SOT666 Benefits ■ Low capacitance uni-directional ESD protection. ■ Low PCB space consuming, 2.5 mm2 max.


    Original     		PDF OT666 883G-Method st marking flash JESD97

    marking code LA SMD

    Abstract: MSD779 PMEG3015EV
    Text: PMEG3015EV 30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier in SOT666 package Rev. 01 — 4 April 2005 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an


    Original     		PDF PMEG3015EV OT666 OT666 marking code LA SMD MSD779 PMEG3015EV

    MSD779

    Abstract: PMEG3015EV SYM038
    Text: PMEG3015EV 30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier in SOT666 package Rev. 02 — 4 February 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an


    Original     		PDF PMEG3015EV OT666 OT666 PMEG3015EV MSD779 SYM038

    Untitled

    Abstract: No abstract text available
    Text: PBSS5220V 20 V, 2 A PNP low VCEsat BISS transistor Rev. 03 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5220V OT666 PBSS4220V. PBSS5220V

    Untitled

    Abstract: No abstract text available
    Text: STLQ015 150 mA, ultra low quiescent current linear voltage regulator Datasheet - production data • Compatible with ceramic capacitor COUT = 1 µF • Internal current and thermal limit • Package: SOT666-6L • Temperature range: from -40 °C to 125 °C


    Original     		PDF STLQ015 OT666-6L OT666 STLQ015 DocID17285

    MARKING CODE SMD IC

    Abstract: PBSS4220V PBSS5220V NV SMD TRANSISTOR TRANSISTOR SMD MARKING CODE N7
    Text: PBSS5220V 20 V, 2 A PNP low VCEsat BISS transistor Rev. 02 — 8 February 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5220V OT666 PBSS4220V. PBSS5220V MARKING CODE SMD IC PBSS4220V NV SMD TRANSISTOR TRANSISTOR SMD MARKING CODE N7

    transistor smd marking CODE n6

    Abstract: PBSS4220V PBSS5220V MARKING CODE SMD IC
    Text: PBSS4220V 20 V, 2 A NPN low VCEsat BISS transistor Rev. 01 — 6 February 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4220V OT666 PBSS5220V. PBSS4220V transistor smd marking CODE n6 PBSS5220V MARKING CODE SMD IC

    BCP52

    Abstract: BCX52 PBSS4160V PBSS5160V
    Text: PBSS5160V 60 V, 1 A PNP low VCEsat BISS transistor Rev. 01 — 20 April 2004 Objective data sheet 1. Product profile 1.1 General description PNP low VCEsat (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V. 1.2 Features • ■ ■


    Original     		PDF PBSS5160V OT666 PBSS4160V. BCP52 BCX52. BCX52 PBSS4160V PBSS5160V

    Untitled

    Abstract: No abstract text available
    Text: PBSS5160V 60 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V.


    Original     		PDF PBSS5160V OT666 PBSS4160V. BCP52 BCX52 PBSS5160V