Untitled
Abstract: No abstract text available
Text: Package outline Plastic surface-mounted package; 3 leads SOT416 B D A E v X HE A 3 Q A 1 A1 2 e1 c bp w B Lp e detail X 1 mm scale Dimensions Unit 1 max nom min mm A 0.9 0.6 A1 0.1 D E 0.30 0.25 1.8 0.9 0.15 0.10 1.4 0.7 bp c e e1 1 0.5 HE Lp Q 1.75 0.45 0.23
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OT416
OT416
sot416
SC-75
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BAV70TGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD BAV70TGP SURFACE MOUNT SWITCHING DIODE VOLTAGE 75 Volts CURRENT 0.15 Ampere APPLICATION * Ultra high speed switching SC-75/SOT-416 FEATURE * Small surface mounting type. SC-75/SOT416 * High speed. (TRR=1.5nSec Typ.) * Suitable for high packing density.
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BAV70TGP
SC-75/SOT-416
SC-75/SOT416)
300mW.
450mA.
100oC
BAV70TGP
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PEMH15
Abstract: PBLS4003V PEMB10 PEMD4 PEMB20 PEMD13 PEMB15 PEMB16 PEMB18 PBLS1503V
Text: Semiconductors Date of release: December 2004 Philips’ portfolio in SOT663, SOT665 and SOT666 packages General features Portfolio overview • • • • • • • • • • • Package available with 3, 5 and 6 flatleads Body height of 0.55 mm PCB area comparable with SOT416 SC-75
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OT663,
OT665
OT666
OT416
SC-75)
OD523
SC-79)
PEMH15
PBLS4003V
PEMB10
PEMD4
PEMB20
PEMD13
PEMB15
PEMB16
PEMB18
PBLS1503V
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smd code marking ID
Abstract: NXP SMD DIODE MARKING CODE T4 NX3008PBKT
Text: SO T4 16 NX3008PBKT 30 V, 200 mA P-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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NX3008PBKT
OT416
SC-75)
AEC-Q101
smd code marking ID
NXP SMD DIODE MARKING CODE T4
NX3008PBKT
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Untitled
Abstract: No abstract text available
Text: SO T4 16 PMR670UPE 20 V, 480 mA P-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMR670UPE
OT416
SC-75)
AEC-Q101
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marking TB
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD BAV70TPT SURFACE MOUNT SWITCHING DIODE VOLTAGE 75 Volts CURRENT 0.15 Ampere APPLICATION * Ultra high speed switching SC-75/SOT-416 FEATURE * Small surface mounting type. SC-75/SOT416 * High speed. (TRR=1.5nSec Typ.) * Suitable for high packing density.
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BAV70TPT
SC-75/SOT-416
SC-75/SOT416)
300mW.
450mA.
100oC
marking TB
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Untitled
Abstract: No abstract text available
Text: SO T4 16 BSS84AKT 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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BSS84AKT
OT416
SC-75)
AEC-Q101
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SC-75
Abstract: SOT-416
Text: Package outline Philips Semiconductors Plastic surface mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0.5 1 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60
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OT416
SC-75
SC-75
SOT-416
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CHDTA123EEGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTA123EEGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-75/SOT-416 * Small surface mounting type. SC-75/SOT416
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CHDTA123EEGP
SC-75/SOT-416
SC-75/SOT416)
CHDTA123EEGP
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Untitled
Abstract: No abstract text available
Text: BAT54T Single Schottky barrier diode Rev. 01 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description Single planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOT416 SC-75 ultra small Surface-Mounted Device (SMD) plastic
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BAT54T
OT416
SC-75)
AEC-Q101
BAT54T
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PMR280UN
Abstract: PMR370XN PMR290XN PMR400UN PMR780SN SC75 SC-75 SC89
Text: 20 V, 30 V and 60 V N-channel MOSFETs in SOT416 SC-75 A new dimension in power Leading the way in miniaturization and Trench technology, NXP’s innovative TrenchMOS portfolio delivers excellent performance from the smallest devices. As consumers demand smaller, efficient
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OT416
SC-75)
PMR280UN
PMR370XN
PMR290XN
PMR400UN
PMR780SN
SC75
SC-75
SC89
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2N7002BKT
Abstract: marking code Z3
Text: 2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Rev. 1 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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2N7002BKT
OT416
SC-75)
AEC-Q101
771-2N7002BKT115
2N7002BKT
marking code Z3
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TRANSISTOR SMD MARKING CODES
Abstract: PBSS2515E PBSS3515E SC-75 MARKING CODE SMD IC
Text: PBSS2515E 15 V, 0.5 A NPN low VCEsat BISS transistor Rev. 01 — 18 April 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement: PBSS3515E.
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PBSS2515E
OT416
SC-75)
PBSS3515E.
TRANSISTOR SMD MARKING CODES
PBSS2515E
PBSS3515E
SC-75
MARKING CODE SMD IC
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marking code A09 SMD Transistor
Abstract: No abstract text available
Text: PBSS3540E 40 V, 500 mA PNP low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2540E.
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PBSS3540E
OT416
SC-75)
PBSS2540E.
PBSS3540E
marking code A09 SMD Transistor
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Untitled
Abstract: No abstract text available
Text: SO T4 16 NX3020NAKT 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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NX3020NAKT
OT416
SC-75)
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SCD-80
Abstract: SCD80 DIODE smd marking A4 BAW222 BAV222 BCR108T SC75 SC79
Text: BAV222/BAW222 Silicon Switching Diode • For high-speed switching applications trr < 4ns • Very low diode capacitance (CT < 1.5pF) • Small SMD package SC75 (JEDEC: SOT416) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BAV222
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BAV222/BAW222
OT416)
BAV222
BAW222
SCD-80
SCD80
DIODE smd marking A4
BAW222
BAV222
BCR108T
SC75
SC79
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smd transistor A4S
Abstract: a4s smd transistor smd transistor A1s smd A1s A1s SMD smd a4s transistor A4s smd SMD A1S datasheet BAW222 Z10C
Text: BAV222 / BAW222 Silicon Switching Diode • For high-speed switching applications trr < 4ns • Very low diode capacitance (CT < 1.5pF) • Small SMD package SC75 (JEDEC: SOT416) BAV222 BAW222 ! , ! , , , Type BAV222* BAW222* Package SC75 SC75 Configuration
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BAV222
BAW222
OT416)
BAV222
BAV222*
BAW222*
smd transistor A4S
a4s smd transistor
smd transistor A1s
smd A1s
A1s SMD
smd a4s
transistor A4s smd
SMD A1S datasheet
BAW222
Z10C
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SOT416
Abstract: SOT-416 SC-75 02 sot416
Text: Package outline Philips Semiconductors Plastic surface-mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0.5 1 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60
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OT416
SC-75
SOT416
SOT-416
SC-75
02 sot416
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CHDTC114WEGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTC114WEGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-75/SOT-416 * Small surface mounting type. SC-75/SOT416
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CHDTC114WEGP
SC-75/SOT-416
SC-75/SOT416)
100uA;
-10mA;
300uS;
100MHz
CHDTC114WEGP
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SC-75
Abstract: No abstract text available
Text: 2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Rev. 1 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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2N7002BKT
OT416
SC-75)
AEC-Q101
SC-75
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BAT54T
Abstract: SC-75
Text: BAT54T Single Schottky barrier diode Rev. 01 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description Single planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOT416 SC-75 ultra small Surface-Mounted Device (SMD) plastic
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BAT54T
OT416
SC-75)
AEC-Q101
BAT54T
SC-75
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SOT-416
Abstract: SC-75
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Plastic surface mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0.5 1 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp c D E e e1 HE Lp
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OT416
SC-75
SOT-416
SC-75
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PBSS2515E
Abstract: PBSS3515E SC-75 MARKING CODE SMD IC
Text: PBSS3515E 15 V, 0.5 A PNP low VCEsat BISS transistor Rev. 02 — 27 April 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.
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PBSS3515E
OT416
SC-75)
PBSS2515E.
PBSS3515E
PBSS2515E
SC-75
MARKING CODE SMD IC
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transistor t07
Abstract: mar-06 transistor "MARKING CODE V2" "marking Code" V2 marking code V2 MRC050 BFQ67T SC-75 transistor 15 GHz transistor 20 dB 14 ghz
Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T FEATURES DESCRIPTION • High power gain NPN transistor in a plastic SOT416 SC-75 package. • Low noise figure • High transition frequency • Gold metallization ensures
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BFQ67T
OT416
SC-75)
OT416.
1BFQ67T
MRC050
7110fl5b
transistor t07
mar-06 transistor
"MARKING CODE V2"
"marking Code" V2
marking code V2
BFQ67T
SC-75
transistor 15 GHz
transistor 20 dB 14 ghz
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