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    SOT23-6 CODE 57 Search Results

    SOT23-6 CODE 57 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    DM7842J/883 Rochester Electronics LLC DM7842J/883 - BCD/Decimal Visit Rochester Electronics LLC Buy
    9310FM Rochester Electronics LLC 9310 - BCD Decade Counter (Mil Temp) Visit Rochester Electronics LLC Buy
    54LS48J/B Rochester Electronics LLC 54LS48 - BCD-to-Seven-Segment Decoders Visit Rochester Electronics LLC Buy
    TLC32044IFK Rochester Electronics LLC PCM Codec, 1-Func, CMOS, CQCC28, CC-28 Visit Rochester Electronics LLC Buy

    SOT23-6 CODE 57 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF DMN3112S AEC-Q101 J-STD-020 MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: TSM2306 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 57 @ VGS =10V 3.5 94 @ VGS =4.5V 2.8 Block Diagram  Advance Trench Process Technology  High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2306 OT-23 TSM2306CX

    TSM2306

    Abstract: TSM2306CX IDA57 n-channel mosfet transistor n-channel mosfet SOT-23
    Text: TSM2306 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 57 @ VGS =10V 3.5 94 @ VGS =4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2306 OT-23 TSM2306CX TSM2306 IDA57 n-channel mosfet transistor n-channel mosfet SOT-23

    Untitled

    Abstract: No abstract text available
    Text: TSM2306 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 57 @ VGS = 10V 3.5 94 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2306 OT-23 TSM2306CX

    DS3920

    Abstract: XG-PON 10G-EPON MAX4007 Photodiode apd current mirror XGPON ONU
    Text: 19-5797; Rev 1; 8/11 DS3920 Fast Current Mirror General Description The DS3920 precision current mirror is designed for avalanche photodiode APD and PIN photodiode biasing and monitoring applications. The device offers a current clamp to limit current through the APD and a current mirror output that produces a signal proportional (5:1) to the


    Original     		PDF DS3920 DS3920 250nA XG-PON 10G-EPON MAX4007 Photodiode apd current mirror XGPON ONU

    Untitled

    Abstract: No abstract text available
    Text: DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features •         Mechanical Data   Low On-Resistance: • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		PDF DMN3112S AEC-Q101 J-STD-020 DS31445

    Untitled

    Abstract: No abstract text available
    Text: DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		PDF DMN3112S AEC-Q101 J-STD-020 MIL-STD-202, DS31445

    Untitled

    Abstract: No abstract text available
    Text: DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance: 57m @ VGS = 10V 112m @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		PDF DMN3112S AEC-Q101 J-STD-020 MIL-STD-202, DS31445

    Untitled

    Abstract: No abstract text available
    Text: 19-5797; Rev 2; 12/11 DS3920 Fast Current Mirror General Description Features The DS3920 precision current mirror is designed for avalanche photodiode APD and PIN photodiode biasing and monitoring applications. The device offers a current clamp to limit current through the APD and a current mirror output that produces a signal proportional (5:1) to the


    Original     		PDF DS3920 DS3920

    XG-PON

    Abstract: avalanche photodiode bias DS3920 current mirror XG-PON OLT 100-FA
    Text: 19-5797; Rev 2; 12/11 DS3920 Fast Current Mirror General Description The DS3920 precision current mirror is designed for avalanche photodiode APD and PIN photodiode biasing and monitoring applications. The device offers a current clamp to limit current through the APD and a current mirror output that produces a signal proportional (5:1) to the


    Original     		PDF DS3920 DS3920 250nA XG-PON avalanche photodiode bias current mirror XG-PON OLT 100-FA

    current mirror

    Abstract: XG-PON XG-PON OLT XGPON ONU
    Text: 19-5797; Rev 0; 3/11 DS3920 Fast Current Mirror General Description The DS3920 precision current mirror is designed for avalanche photodiode APD and PIN photodiode biasing and monitoring applications. The device offers a current clamp to limit current through the APD and a current mirror output that produces a signal proportional (5:1) to the


    Original     		PDF DS3920 current mirror XG-PON XG-PON OLT XGPON ONU

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGN USE DMN3110S DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features •         Mechanical Data   Low On-Resistance: • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance


    Original     		PDF DMN3110S DMN3112S AEC-Q101 J-STD-020 DS31445

    DMN3112S

    Abstract: marking ANs J-STD-020D
    Text: DMN3112S N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V


    Original     		PDF DMN3112S AEC-Q101 OT-23 J-STD-020D MIL-STD-202, DS31445 DMN3112S marking ANs J-STD-020D

    3K14

    Abstract: N-CHANNEL MOSFET 30V 2A SOT-23 2A MARKING SOT23
    Text: CYStech Electronics Corp. Spec. No. : C427N3 Issued Date : 2008.05.16 Revised Date : Page No. : 1/7 30V N-CHANNEL Enhancement Mode MOSFET MTN3K14N3 Features • VDS=30V RDS ON =39mΩ@VGS=10V, ID=2A RDS(ON)=57mΩ@VGS=4.5V, ID=2A • Low on-resistance • High speed : ton=24ns(typ.), toff=19ns(typ.)


    Original     		PDF C427N3 MTN3K14N3 OT-23 UL94V-0 3K14 N-CHANNEL MOSFET 30V 2A SOT-23 2A MARKING SOT23

    marking code SS SOT23

    Abstract: marking N03
    Text: PJS50N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 2.9 Amperes FEATURES • RDS ON , VGS@10V,[email protected]< 57 mΩ • RDS(ON), [email protected],[email protected]< 94 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF PJS50N03 2002/95/EC IEC61249 OT-23 MIL-STD-750 0084grams 2012-REV RB500V-40 PJS50N03 marking code SS SOT23 marking N03

    Untitled

    Abstract: No abstract text available
    Text: PJS50N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 2.9 Amperes FEATURES • RDS ON , VGS@10V,[email protected]< 57 mΩ • RDS(ON), [email protected],[email protected]< 94 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF PJS50N03 2002/95/EC IEC61249 OT-23 MIL-STD-750 0084grams 2012-REV RB500V-40 PJS50N03

    Untitled

    Abstract: No abstract text available
    Text: PJA94N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 2.9 Amperes FEATURES • RDS ON , VGS@10V,[email protected]< 57 mΩ • RDS(ON), [email protected],[email protected]< 94 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF PJA94N03 2002/95/EC IEC61249 OT-23 MIL-STD-750 0084grams 2011-REV RB500V-40 PJA94N03

    Untitled

    Abstract: No abstract text available
    Text: PJA94N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 2.9 Amperes FEATURES • RDS ON , VGS@10V,[email protected]< 57 mΩ • RDS(ON), [email protected],[email protected]< 94 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF PJA94N03 2002/95/EC IEC61249 OT-23 MIL-STD-750 0084grams 2011-REV RB500V-40 PJA94N03

    Untitled

    Abstract: No abstract text available
    Text: PJA94N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 2.9 Amperes FEATURES • RDS ON , VGS@10V,[email protected]< 57 mΩ • RDS(ON), [email protected],[email protected]< 94 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF PJA94N03 2002/95/EC IEC61249 OT-23 MIL-STD-750 0084grams 2011-REV RB500V-40

    c639

    Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05


    Original     		PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


    Original     		PDF 3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor

    68w11

    Abstract: marking code 27E SOT 23 sot23 marking code tab MARKING 27E marking code 27e 000012a kn sot23 68-W11 sot-23 Marking yr F 7389
    Text: 3 i a m a b ooooizfi 4 • 57E D ELECTRO-FILMS INC The Electro-Films, Inc. Micro Divider provides the optim um in precision, stability, and size for all surface m ount potential divider applications. It is molded in an SOT-23 style package with total resistor


    OCR Scan     		PDF OT-23 OT-23. 000012a -520ppm -25ppm 68w11 marking code 27E SOT 23 sot23 marking code tab MARKING 27E marking code 27e kn sot23 68-W11 sot-23 Marking yr F 7389

    c639

    Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
    Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04


    OCR Scan     		PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN