SOT23 MARKING GF Search Results

SOT23 MARKING GF Result Highlights (5)

Part	Manufacturer	Description
TBAW56	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23
MG8097/B	Rochester Electronics LLC	8097 - Math Coprocessor - Dual marked (8506301ZA)
5490/BCA	Rochester Electronics LLC	5490 - Decade Counter - Dual marked (M38510/01307BCA)
5405/BCA	Rochester Electronics LLC	5405 - Gate - Dual marked (M38510/00108BCA)
54AC20/SDA-R	Rochester Electronics LLC	54AC20/SDA-R - Dual marked (M38510R75003SDA)

SOT23 MARKING GF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Mosfet Abstract: SSF2418E 2418E Text: SSF2418E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 18mohm(typ.) ID 6A SOT23-6 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and	Original	PDF	SSF2418E 18mohm OT23-6 2418E Mosfet SSF2418E 2418E
Mosfet Abstract: SSF2160G4 marking s25 Text: SSF2160G4 20V N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 28mohm(typ.) ID 4.5A 2160G4 S25 Marking and Pin SOT23-3 Assignment Schematic Diagram Features and Benefits       Advanced trench MOSFET process technology Special designed for buttery protection, load	Original	PDF	SSF2160G4 28mohm 2160G4 OT23-3 3000pcs 10pcs 30000pcs 120000pcs Mosfet SSF2160G4 marking s25
Mosfet Abstract: SSF3051G7 Text: SSF3051G7 30V P-Channel MOSFET Main Product Characteristics D RDS on 3051G7 VDSS -30V 45mohm(typ.) G S ID -4A Marking and Pin SOT23-6 Assignment Schematic Diagram Features and Benefits:       Advanced trench MOSFET process technology Special designed for buttery protection, load	Original	PDF	SSF3051G7 3051G7 45mohm OT23-6 3000pcs 10pcs 30000pcs Mosfet SSF3051G7
2n4416 and application note Abstract: TSSOP-8 footprint and soldering sot-23 2N4416 equivalent Siliconix sot23 marking THERMAL SWITCH SC-75A sot-23 Marking N2 699 marking code sot23-5 marking code v6 SOT23 V30114 marking code 20L sot-23 sot23 Text: 2N4416/2N4416A/SST4416 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N4416 −v6 −30 4.5 5 2N4416A −2.5 to −6 −35 4.5 5 SST4416 −v6 −30 4.5 5 FEATURES BENEFITS D Excellent High-Frequency Gain:	Original	PDF	2N4416/2N4416A/SST4416 2N4416 2N4416A SST4416 2N4416/A, 2N4416/2N4416A/SST4416 26-Nov-03 AN826 OT-23 20-Jun-03 2n4416 and application note TSSOP-8 footprint and soldering sot-23 2N4416 equivalent Siliconix sot23 marking THERMAL SWITCH SC-75A sot-23 Marking N2 699 marking code sot23-5 marking code v6 SOT23 V30114 marking code 20L sot-23 sot23
MARKING 68W SOT-23 Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23 Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06	Original	PDF	25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
c639 Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423 Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05	Original	PDF	3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
transistor C639 Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W	Original	PDF	3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
transistor Bc 540 Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89 Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W	Original	PDF	0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
AN102 Abstract: AN106 SST200 SST200A ultra low igss pA Text: SST200/200A New Product Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfS Min (mS) IDSS Min (mA) –0.3 to –0.9 –25 0.25 0.7 FEATURES BENEFITS APPLICATIONS D D D D D High Quality Low-Level Signal Amplification D Low Signal Loss/System Error	Original	PDF	SST200/200A SST200/200A S-20517--Rev. 15-Apr-02 AN102 AN106 SST200 SST200A ultra low igss pA
ultra low igss pA Abstract: hearing aid microphone hearing aids Siliconix AN102 SST200 AN102 AN106 SST200A Vishay AN106 Text: SST200/200A Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfS Min (mS) IDSS Min (mA) -0.3 to -0.9 -25 0.25 0.15 FEATURES D D D D Low Cutoff Voltage: <0.9 V High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 mA BENEFITS	Original	PDF	SST200/200A SST200/200A SST20MHz S-31623--Rev. 01-Sep-03 ultra low igss pA hearing aid microphone hearing aids Siliconix AN102 SST200 AN102 AN106 SST200A Vishay AN106
Untitled Abstract: No abstract text available Text: SST200/200A New Product Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfS Min (mS) IDSS Min (mA) –0.3 to –0.9 –25 0.25 0.15 FEATURES BENEFITS APPLICATIONS D D D D D High Quality Low-Level Signal Amplification D Low Signal Loss/System Error	Original	PDF	SST200/200A SST200/200A S-04028â 04-Jun-01
ultra low igss pA Abstract: No abstract text available Text: SST200/200A Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfS Min (mS) IDSS Min (mA) -0.3 to -0.9 -25 0.25 0.15 FEATURES D D D D Low Cutoff Voltage: <0.9 V High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 mA BENEFITS	Original	PDF	SST200/200A SST200/200A 08-Apr-05 ultra low igss pA
Vishay AN106 Abstract: Vishay AN102 hearing aids AN102 AN106 SST200 SST200A Marking Code For marking code vishay SILICONIX to-236 Text: SST200/200A Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfS Min (mS) IDSS Min (mA) -0.3 to -0.9 -25 0.25 0.15 FEATURES D D D D Low Cutoff Voltage: <0.9 V High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 mA BENEFITS	Original	PDF	SST200/200A SST200/200A SST20lectual 18-Jul-08 Vishay AN106 Vishay AN102 hearing aids AN102 AN106 SST200 SST200A Marking Code For marking code vishay SILICONIX to-236
MARKING EA1 sot-23 Abstract: SOT-23 EA1 sot-23 MARKING GU GY SOT-23 RF1 marking limiter diode APD0520-000 marking GD DMJ3952-020 EA1 sot-23 MARKING EA1 Text: Diodes LIMITER DIODES Plastic Packaged Silicon Limiter Diodes Part Number VB IR = 10 µA V CT (pF) 0 V, F = 1 MHz CT (pF) 0 V F = 1 GHz RS IF = 10 mA Ω) F = 100 MHz (Ω Carrier Lifetime TL (ns) IF = 10 mA Package SMP1330 Series 20–50 0.7 Typ., 1.0 Max.	Original	PDF	SMP1330 OT-23 SMP1330-005LF SMP1330-007LF CLA4601-000 CLA4602-000 CLA4603-000 CLA4604-000 MARKING EA1 sot-23 SOT-23 EA1 sot-23 MARKING GU GY SOT-23 RF1 marking limiter diode APD0520-000 marking GD DMJ3952-020 EA1 sot-23 MARKING EA1

ML5203 Abstract: ML5103 ML2803 ML6302 sot-23 marking code pe AN-994 marking code pe sot-23 MOSFET IRL SOT-23 marking code BS marking BS SOT-23 Text: IRLML6402PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage	Original	PDF	IRLML6402PbF OT-23/TO-263AB) EIA-481 EIA-541. ML5203 ML5103 ML2803 ML6302 sot-23 marking code pe AN-994 marking code pe sot-23 MOSFET IRL SOT-23 marking code BS marking BS SOT-23
XM0830SJ Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563 Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters	Original	PDF	24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
GF2303A Abstract: 1s sot-23 Text: GF2303A P-Channel Enhancement-Mode MOSFET TO-236AB SOT-23 t c u d o r P H C w e N N TREENFET Top View G .118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37) .055 (1.40) .047 (1.20) 3 Pin Configuration 0.035 (0.9) 0.079 (2.0) 0.037 (0.95) 0.037 (0.95) Dimensions in inches	Original	PDF	GF2303A O-236AB OT-23) OT-23 --10V GF2303A 1s sot-23
MOSFET SOT-23 marking 122 Abstract: No abstract text available Text: GF2301 P-Channel Enhancement-Mode MOSFET Low V t c u d o r P H C w e N N TREENFET Top View G GS th TO-236AB (SOT-23) .118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37) .055 (1.40) .047 (1.20) 3 Pin Configuration 0.031 (0.8) 0.035 (0.9) 0.079 (2.0) 1. Gate 2. Source	Original	PDF	GF2301 O-236AB OT-23) VDS-20V OT-23 MOSFET SOT-23 marking 122
c639 Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04	OCR Scan	PDF	3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
P-channel Trench MOSFET Abstract: No abstract text available Text: < X >G e n e r a l v S e m ic o n d u c t o r _ GF2301 P-Channel Enhancement-Mode MOSFET # % LowVGS<th VDS-20V RdS(ON)0.13Q Id-2.3A TO-236AB (SOT-23) 0.031 (0.8) Hh Top View -F p - Pin Configuration 0 .0 3 5 (0.9) 0.079 (2.0) 1. Gate 2. Source	OCR Scan	PDF	GF2301 O-236AB OT-23) VDS-20V OT-23 OT-23, P-channel Trench MOSFET
marking ZS SOT-23 Abstract: marking M2 JFET BSR56 Text: SILICONIX INC ÎÔE D • 0254735 0G13öbT 7 ■ BSR56 SERIES J 7 IS S & 1 T-35-Z.S N-Channel JFETs The BSR56 Series Is a n-ohannel JFET mounted in our popular SOT-23 package, Its low cost and c d s ON make It a good choice for an all-purpose analog switch, while Its high gfa' and good	OCR Scan	PDF	BSR56 OT-23 T-35-Z BSR57 BSR58 OT-23 marking ZS SOT-23 marking M2 JFET
GF2304 Abstract: No abstract text available Text: v G eneral S e m ic o n d u c t o r _ GF2304 N-Channel Enhancement-Mode MOSFET % VdS 30V RdS ON 0.117Q Id 2.5A TO-236AB (SOT-23) . 1 1 8 ( 3 .0 ) . 1 1 0 ( 2 .8 ) 0.031 (0.8) . 0 2 0 ( 0 . 51 ) . 0 1 5 ( 0 .37 ) .TiT . .041 ( 1 .03 )	OCR Scan	PDF	GF2304 O-236AB OT-23) OT-23 GF2304
marking H3t sot23 Abstract: sot-23 marking 7z H3T TIME UNIT MMBFJ310 MMBT404 MMBT918 MMBT404A MOTOROLA 2N marking LG sot-23 7Z SOT23 Text: r DE \| t , 3 t , 7 S S 4 sc -c x s t r s / r F} 6367254 MOTOROLA SCCXSTRS/R motorola F 96D 8 2 0 1 2 . i D GflED ia D T ^ ï- â 5 M A X IM U M RA TIN G S Symbol Value Unit Drain-Source Voltage Vos 25 Vdc Gate-Source Voltage Vg S 25 Vdc >G 10 mAdc Rating	OCR Scan	PDF	0flE03D MMBT918 T-31-15 marking H3t sot23 sot-23 marking 7z H3T TIME UNIT MMBFJ310 MMBT404 MMBT918 MMBT404A MOTOROLA 2N marking LG sot-23 7Z SOT23
GF3443 Abstract: No abstract text available Text: GF3443 P-Channel Logic Level Enhancement-Mode MOSFET « V D S -2 0 V R d S ON 65m Q Id - 4 . 4 A SOT-23, S0T-23-6L v G eneral S e m ic o n ] Mechanical Data_ Features_ Case: SOT-23-6L package Terminals: Leads solderable per MIL-STD-750,	OCR Scan	PDF	GF3443 OT-23-6L MIL-STD-750, OT-23, S0T-23-6L GF3443

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SOT23 MARKING GF Search Results

SOT23 MARKING GF Result Highlights (5)

SOT23 MARKING GF Datasheets Context Search

Mosfet

Mosfet

Mosfet

2n4416 and application note

MARKING 68W SOT-23

c639

transistor C639

transistor Bc 540

AN102

ultra low igss pA

Untitled

ultra low igss pA

Vishay AN106

MARKING EA1 sot-23

ML5203

XM0830SJ

GF2303A

MOSFET SOT-23 marking 122

c639

P-channel Trench MOSFET

marking ZS SOT-23

GF2304

marking H3t sot23

GF3443