SOT143R
Abstract: SOT-143R
Text: SOT143R Vishay Semiconductors SOT143R Package Dimensions in mm Inches 96 12239 Document Number 84029 Rev. 1.2, 12-Jan-07 www.vishay.com 1 SOT143R Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to
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OT143R
12-Jan-07
D-74025
SOT143R
SOT-143R
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Field-Effect Transistors
Abstract: SOT54variant diodes PACKAGE
Text: DISCRETE SEMICONDUCTORS Package outlines Small-signal Field-effect Transistors and Diodes 1999 May 11 PACKAGE INFORMATION Page SOD68 . SOD110 . SOD323 . SOD523 . SOT23 . SOT54 . SOT54variant . SOT143B . SOT143R . SOT323 . SOT343N
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OD110
OD323
OD523
OT54variant
OT143B
OT143R
OT323
OT343N
OT343R
OT363
Field-Effect Transistors
SOT54variant
diodes PACKAGE
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RF Wideband Transistors
Abstract: No abstract text available
Text: PACKAGE OUTLINES Package SOT23 SOT54 SOT54variant SOT89 SOT122A SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 Surface-mount yes no no yes no yes yes no no yes yes yes yes yes yes Page . . . . . . . .
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OT54variant
OT122A
OT143B
OT143R
OT172A1
OT172A2
OT223
OT323
OT343N
OT343R
RF Wideband Transistors
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SOT143R
Abstract: SC-61AA SOT-143R
Text: Package outline Philips Semiconductors Plastic surface mounted package; reverse pinning; 4 leads D SOT143R B E A X y HE v M A e bp w M B 3 4 Q A A1 c 2 1 Lp b1 e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp b1 c D E e
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OT143R
SC-61AA
SOT143R
SC-61AA
SOT-143R
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Untitled
Abstract: No abstract text available
Text: Package outline Plastic surface-mounted package; reverse pinning; 4 leads D SOT143R B E A X y HE v M A e bp w M B 3 4 Q A A1 2 c 1 Lp b1 e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1
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OT143R
SC-61AA
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Untitled
Abstract: No abstract text available
Text: BFU520XR NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU520XR is part of the BFU5 family of transistors, suitable for small signal to
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BFU520XR
OT143R
BFU520XR
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: BFU530XR NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU530XR is part of the BFU5 family of transistors, suitable for small signal to
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BFU530XR
OT143R
BFU530XR
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: PC board footprint NXP Semiconductors Footprint for wave soldering of package SOT143R 4.45 2.2 1.2 3x 1.425 (3×) solder lands solder resist 2.575 4.6 occupied area Dimensions in mm 1.425 preferred transport direction during soldering 1 1.2 sot143r_fw SOT143R_fw
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OT143R
sot143r
OT143R
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Untitled
Abstract: No abstract text available
Text: BFG325/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits
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BFG325/XR
OT143R
BFG325
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SOT143R
Abstract: No abstract text available
Text: PDF: 1999 Sep 14 Philips Semiconductors Package outline Plastic surface mounted package; reverse pinning; 4 leads D SOT143R B E A X y HE v M A e bp w M B 3 4 Q A A1 c 2 1 Lp b1 e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1
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OT143R
SC-61B
SOT143R
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transistor l2
Abstract: No abstract text available
Text: BFG310/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features • ■ ■ ■ High power gain
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BFG310/XR
OT143R
transistor l2
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Untitled
Abstract: No abstract text available
Text: BFG310/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits
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BFG310/XR
OT143R
BFG310
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Untitled
Abstract: No abstract text available
Text: PC board footprint NXP Semiconductors Footprint for reflow soldering of package SOT143R 3.25 0.6 3x 0.5 (3×) 1.9 0.6 0.7 (3×) (3×) solder lands solder resist 3 2 solder paste occupied area 0.6 0.7 Dimensions in mm 0.95 0.75 0.9 1 sot143r_fr SOT143R_fr
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OT143R
sot143r
OT143R
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transistor l2
Abstract: transistor bf 194
Text: BFG325/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits
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BFG325/XR
OT143R
BFG325
transistor l2
transistor bf 194
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TRANSISTOR L2
Abstract: transistor bf 194 E C B
Text: BFG325/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features • ■ ■ ■ High power gain
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BFG325/XR
OT143R
TRANSISTOR L2
transistor bf 194 E C B
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Untitled
Abstract: No abstract text available
Text: BFG310/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits
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BFG310/XR
OT143R
BFG310
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Untitled
Abstract: No abstract text available
Text: LED Drivers - Product Overview Preliminary Data Application BCR401R Vcc, max Id,typ Id,max Vdrop Ptot RthJS Samples low current LED Driver SOT143R 18V 10mA 50mA 1.2V 0.33W 190K/W NOW ! NEW universal LED Driver SOT143R 18V 20mA 50mA 1.4V 0.33W 190K/W MP BCR402U
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BCR401R
OT143R
190K/W
BCR402U
65K/W
Q3/2002
BCR405U
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Untitled
Abstract: No abstract text available
Text: BFU550XR NPN wideband silicon RF transistor Rev. 1 — 14 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU550XR is part of the BFU5 family of transistors, suitable for small signal to
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BFU550XR
OT143R
BFU550XR
AEC-Q101
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BF1108_BF1108R
Abstract: BF1108_1108R_3 MARKING CODE CGK BF1108 BF1108R
Text: BF1108; BF1108R Silicon RF switches Rev. 04 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The
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BF1108;
BF1108R
OT143B
BF1108)
OT143R
BF1108R)
BF1108
BF1108R
BF1108_BF1108R
BF1108_1108R_3
MARKING CODE CGK
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RF Wideband Transistors
Abstract: MS-012AA
Text: PACKAGE OUTLINES Package SOT23 SOT54 SOT89 SOT96-1 SOT122A SOT122D SOT122E SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 SOT551A Surface-mount yes no yes yes no no no yes yes no no yes yes yes yes yes yes yes Page . .
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OT96-1
OT122A
OT122D
OT122E
OT143B
OT143R
OT172A1
OT172A2
OT223
OT323
RF Wideband Transistors
MS-012AA
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Untitled
Abstract: No abstract text available
Text: Package outline Philips Semiconductors Plastic surface-mounted package; reverse pinning; 4 leads D SOT143R B E A X y HE v M A e bp w M B 3 4 Q A A1 c 2 1 Lp b1 e1 detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 max bp b1 c D E e
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OT143R
SC-61AA
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Marking G1s
Abstract: No abstract text available
Text: I bbS3131 [][]P3bP3 bat. • APX BF992R N AUER PHILIPS/DISCRETE L7E D yv SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143R microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended fo r use in VHF applications, such as VHF
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bbS3131
BF992R
OT143R
Marking G1s
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transistor marking M04 GHZ
Abstract: m04 marking dual-gate
Text: Short-form preliminary specification Philips Sem iconductors Dual-gate MOS-FET BF904; BF904R FEATURES DESCRIPTION • Specially designed for use at 5 V supply voltage Enhancement type field-effect transistors in plastic micro-miniature SOT143 and SOT143R envelopes.
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BF904;
BF904R
OT143
OT143R
MAM077
OT143)
transistor marking M04 GHZ
m04 marking
dual-gate
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Data sheet status Product specification date of issue April 1995 FEATURES • Short channel transistor with high ratio IVfsi^Cis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor in a plastic SOT143R microminiature
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OCR Scan
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BF998R
OT143R
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