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Catalog Datasheet	MFG & Type	PDF	Document Tags
SMT3725ALNF Abstract: No abstract text available Text: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: SMT3725ALNF DESCRIPTION: SURFACE MOUNT TERMINATION, ALUMINUM NITRIDE, LEAD FREE ASSEMBLY DWG: 1102024 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 2 GHZ. 1.1.3	Original	PDF	SMT3725ALNF MIL-PRF-55342 824W154. 755W002. 09-E0830 SMT3725ALNF
ATC600F100JT250XT Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from	Original	PDF	MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 ATC600F100JT250XT
*J532 Abstract: C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529 Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from	Original	PDF	MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 *J532 C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529
MRF8P20100HR3 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from	Original	PDF	MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3