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    SMD TRANSISTOR PD8 Search Results

    SMD TRANSISTOR PD8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR PD8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NV SMD TRANSISTOR

    Abstract: AN1294 UHF rfid reader ma706
    Text: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■


    Original     		PDF PD84006-E 2002/95/EC PowerSO-10RF PD84006-E NV SMD TRANSISTOR AN1294 UHF rfid reader ma706

    Untitled

    Abstract: No abstract text available
    Text: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet −production data Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz


    Original     		PDF PD84006-E 2002/95/EC PowerSO-10RF PD84006-E

    PD85015-E

    Abstract: PD85015 PD85015s-e AN1294 JESD97 J-STD-020B PowerSO-10RF
    Text: PD85015-E PD85015S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■


    Original     		PDF PD85015-E PD85015S-E 2002/95/EC PowerSO-10RF PD85015-E PD85015 PD85015s-e AN1294 JESD97 J-STD-020B PowerSO-10RF

    PD85015s-e

    Abstract: PD85015 AN1294 PD85015-E
    Text: PD85015-E PD85015S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original     		PDF PD85015-E PD85015S-E 2002/95/EC PowerSO-10RF PD85015-E PD85015s-e PD85015 AN1294

    Untitled

    Abstract: No abstract text available
    Text: PD85015-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet −production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■ Plastic package


    Original     		PDF PD85015-E 2002/95/EC PowerSO-10RF PD85015-E

    Untitled

    Abstract: No abstract text available
    Text: PD85015-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original     		PDF PD85015-E 2002/95/EC PowerSO-10RF PD85015-E

    PD84010-E

    Abstract: AN1294 JESD97 J-STD-020B
    Text: PD84010-E PD84010S-E RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10W with 14.3dB gain @ 870MHz / 7.5V ■ Plastic package ■ ESD protection


    Original     		PDF PD84010-E PD84010S-E 870MHz 2002/95/EC PowerSO-10RF PD84010-E AN1294 JESD97 J-STD-020B

    NV SMD TRANSISTOR

    Abstract: PD85035-E PD85035 PD85035S PD85035S-E AN1294 JESD97 J-STD-020B PD85035STR-E PD85035TR-E
    Text: PD85035-E PD85035S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35W with 14.9dB gain @ 870MHz / 13.6V ■ Plastic package


    Original     		PDF PD85035-E PD85035S-E 870MHz 2002/93/EC PowerSO-10RF PD85035-E NV SMD TRANSISTOR PD85035 PD85035S PD85035S-E AN1294 JESD97 J-STD-020B PD85035STR-E PD85035TR-E

    smd Transistor 1117

    Abstract: PD85050S smd Transistor 1116 J0363
    Text: PD85050S RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet −preliminary data Features • Operating frequencies from 1 MHz to 1000 MHz ■ POUT > 50W with 12dB gain @ 870 MHz / 13.6V ■ Unmatched device for wideband operation


    Original     		PDF PD85050S PowerSO-10RF 2002/95/EC1 PowerSO-10RF PD85050S smd Transistor 1117 smd Transistor 1116 J0363

    Untitled

    Abstract: No abstract text available
    Text: PD84010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 14.3 dB gain @ 870 MHz / 7.5 V ■ Plastic package


    Original     		PDF PD84010-E 2002/95/EC PowerSO-10RF PD84010-E

    Untitled

    Abstract: No abstract text available
    Text: PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original     		PDF PD85035-E 2002/95/EC1 PowerSO-10RF PD85035-E

    Untitled

    Abstract: No abstract text available
    Text: PD85025-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original     		PDF PD85025-E 2002/95/EC PowerSO-10RF PD85025-E

    Untitled

    Abstract: No abstract text available
    Text: PD85025-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original     		PDF PD85025-E 2002/95/EC PowerSO-10RF PD85025-E

    PD85035S-E

    Abstract: PD85035 transistor SMD 12W PD85035-E PD85035S AN1294 JESD97 J-STD-020B PD85035STR-E PD85035TR-E
    Text: PD85035-E PD85035S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■


    Original     		PDF PD85035-E PD85035S-E 2002/95/EC1 PowerSO-10RF PD85035-E PD85035S-E PD85035 transistor SMD 12W PD85035S AN1294 JESD97 J-STD-020B PD85035STR-E PD85035TR-E

    PD85025s-e

    Abstract: NV SMD TRANSISTOR PD85025 PD85025S AN1294 JESD97 J-STD-020B PD85025-E
    Text: PD85025-E PD85025S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25W with 15.7dB gain @ 870MHz / 13.6V ■ Plastic package


    Original     		PDF PD85025-E PD85025S-E 870MHz 2002/93/EC PowerSO-10RF PD85025-E PD85025s-e NV SMD TRANSISTOR PD85025 PD85025S AN1294 JESD97 J-STD-020B

    AN1294

    Abstract: J-STD-020B PD85035-E PD85035S-E PD85035STR-E PD85035TR-E PD85035
    Text: PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original     		PDF PD85035-E 2002/95/EC1 PowerSO-10RF PD85035-E AN1294 J-STD-020B PD85035S-E PD85035STR-E PD85035TR-E PD85035

    Untitled

    Abstract: No abstract text available
    Text: PD84010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 14.3 dB gain @ 870 MHz / 7.5 V ■ Plastic package ■ ESD protection


    Original     		PDF PD84010-E 2002/95/EC PowerSO-10RF PD84010-E

    smd transistor 12W 13

    Abstract: AN1294 JESD97 J-STD-020B PD84008-E
    Text: PD84008-E PD84008S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 14.7 dB gain @ 870 MHz / 7.5 V ■ Plastic package


    Original     		PDF PD84008-E PD84008S-E 2002/95/EC PowerSO-10RF PD84008-E smd transistor 12W 13 AN1294 JESD97 J-STD-020B

    Untitled

    Abstract: No abstract text available
    Text: PD84008-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 14.7 dB gain @ 870 MHz / 7.5 V ■ Plastic package


    Original     		PDF PD84008-E 2002/95/EC PowerSO-10RF PD84008-E

    PD85006

    Abstract: PD85006-E AN1294 GRM39-X7R103K50C560 PD84002 PD85 EXCELDRC35C 706 SMD ST T112-16 16208
    Text: PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V ■ Plastic package


    Original     		PDF PD85006-E Hz/13 2002/95/EC PowerSO-10RF PD85006-E PD85006 AN1294 GRM39-X7R103K50C560 PD84002 PD85 EXCELDRC35C 706 SMD ST T112-16 16208

    PD85006

    Abstract: PD85006-E 16208 AN1294 706 SMD ST diode gp 434 EXCELDRC35C PD84002 PD85 740J
    Text: PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V ■ Plastic package


    Original     		PDF PD85006-E Hz/13 2002/95/EC PowerSO-10RF PD85006-E PD85006 16208 AN1294 706 SMD ST diode gp 434 EXCELDRC35C PD84002 PD85 740J

    SMD MARKING GP TRANSISTOR

    Abstract: J-STD-020B PD84008L-E st 84008
    Text: RefTitle1 PD84008L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V ■ Plastic package ■ ESD protection


    Original     		PDF PD84008L-E 2002/95/EC PD84008L-E SMD MARKING GP TRANSISTOR J-STD-020B st 84008

    JESD97

    Abstract: J-STD-020B PD84008L-E st 84008
    Text: PD84008L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V ■ Plastic package


    Original     		PDF PD84008L-E 2002/95/EC JESD97 J-STD-020B PD84008L-E st 84008

    Untitled

    Abstract: No abstract text available
    Text: PD84008L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V ■ Plastic package


    Original     		PDF PD84008L-E 2002/95/EC