MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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CDFP4-F16
Abstract: ISL73096RHVF "top mark" intersil 5962F0721801V9A ISL73096RH ISL73127RH ISL73128RH NPN PNP Transistor Arrays PNP Transistor Arrays Intersil s1 smd transistor
Text: ISL73096RH, ISL73127RH, ISL73128RH Data Sheet March 23, 2009 Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays FN6475.2 Features • Electrically Screened to SMD # 5962-07218 The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The
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ISL73096RH,
ISL73127RH,
ISL73128RH
FN6475
ISL73127RH
ISL73128RH
ISL73096RH
ISL73127RH
CDFP4-F16
ISL73096RHVF
"top mark" intersil
5962F0721801V9A
NPN PNP Transistor Arrays
PNP Transistor Arrays Intersil
s1 smd transistor
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV45EN2 30 V, N-channel Trench MOSFET 3 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV45EN2
O-236AB)
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PMV20EN
Abstract: No abstract text available
Text: SO T2 3 PMV20EN 30 V, N-channel Trench MOSFET 5 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV20EN
O-236AB)
PMV20EN
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV37EN2 30 V, N-channel Trench MOSFET 3 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV37EN2
O-236AB)
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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PMXB56EN
DFN1010D-3
OT1215)
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 13 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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PMXB65ENE
DFN1010D-3
OT1215)
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 25 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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PMXB56EN
DFN1010D-3
OT1215)
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3P03L04
Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
Text: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V
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IPI80P03P3L-04
IPP80P03P3L-04
IPB80P03P3L-04
IPP80P03P3L-04
3P03L04
BIPP80P03P3L-04,
3P03L04
ANPS071E
INFINEON smd PART MARKING
IPI80P03P3L-04
INFINEON PART MARKING
DIODE smd marking Ag
IPB80P03P3L-04
package to220
DIODE smd marking code UM 31
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
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PMXB65ENE
DFN1010D-3
OT1215)
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L 10mH
Abstract: ld smd transistor smd transistor 26 KUK109-50DL atp50
Text: Transistors IC SMD Type PowerMOS transistor Logic level TOPFET KUK109-50DL TO-263 Features Unit: mm 1 .2 7 -0+ 0.1.1 Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature +0.1 1.27-0.1 +0.2 4.57-0.2 5 V logic compatible input level
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KUK109-50DL
O-263
L 10mH
ld smd transistor
smd transistor 26
KUK109-50DL
atp50
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smd transistor LY
Abstract: A763 transistor SMD 352 ld smd transistor smd transistor ds
Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device SMD in thin and thick-fllm circuits for
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BST82
smd transistor LY
A763
transistor SMD 352
ld smd transistor
smd transistor ds
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smd transistor LY
Abstract: smd transistor ds 65 ld smd transistor smd transistor ds 15 transistor LD TRANSISTOR C 369 BST86
Text: Product specification Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed for use as Surface Mounted Device SMD in thin and thick-lilm circuits for
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300ation
BST86
smd transistor LY
smd transistor ds 65
ld smd transistor
smd transistor ds 15
transistor LD
TRANSISTOR C 369
BST86
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02p SMD TRANSISTOR
Abstract: BST82 BST82 SMD SMD TRANSISTOR MARKING DM sot23 02p
Text: BST82 A _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed fo r use as Surface Mounted Device SMD in thin and thick-film circuits fo r telephone ringer and for application
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BST82
BST82
RDSonat25Â
02p SMD TRANSISTOR
BST82 SMD
SMD TRANSISTOR MARKING DM
sot23 02p
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transistor smd MJ 145
Abstract: d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145
Text: Infineon technologies BUZ 31 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds ¡D ^DS(on) Package Ordering Code BUZ 31 SMD 200 V 14.5 A 0.2 Q D:PAK Q67042-S4131 Maximum Ratings Parameter
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q67042-s4131
np-60
transistor smd MJ 145
d 132 smd code diode
d 132 smd diode
qd SMD
SMD TRANSISTOR qd
BUZ31
smd rgs
smd diode 145
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6 pin TRANSISTOR SMD CODE PA
Abstract: BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD
Text: Infineon technologies BUZ 22 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 D BUZ 22 SMD </ Type 100 V 34 A ^D S on) Package Ordering Code 0.055 Í2 d 2p a k Q67042-S4139 Maximum Ratings Parameter Symbol
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BUZ22SMD
q67042-s4139
DsJ14
6 pin TRANSISTOR SMD CODE PA
BUZ22
smd code buz
smd rgs
BUZ22 SMD
BUZ22SMD
Diode smd code sm
PH smd transistor PH
smd transistor A7J
TRANSISTOR SMD XD
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Untitled
Abstract: No abstract text available
Text: C P T - 1 8 2 2 / U - X Surface Mountable Chip Photo-transistor CPT-182 Series W M / Features — r Developed as a chip tyoe SMD photo transistor for both right-angle and upright uses Small and square size, dimensions' 3.2 L X2.4(W ) x 2.4(H)mm 2. ^ ^ È t t 3 . 2 ( L ) X 2 . 4 ( W ) x 2 . 4
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CPT-182
950nmlR
CL-201
CL-201IR
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BUZ100
Abstract: BSS10
Text: SIEMENS BUZ100L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dw'df rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type Vbs BUZ100L 50V b 60 A Boston
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OCR Scan
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O-220
BUZ100L
C67078-S1354-A2
T05155
BUZ100
BSS10
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 101 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vds BUZ101 50 V 29 A flbSfon Package Ordering Code
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OCR Scan
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O-220
BUZ101
C67078-S1350-A2
A235bOS
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702 TRANSISTOR smd
Abstract: smd 58a transistor 6-pin transistor 702 F smd TRANSISTOR SMD 702 N 702 L TRANSISTOR smd 702 Z TRANSISTOR smd 702 N smd transistor transistor 702 smd SMD transistor code 702 702 transistor smd code
Text: SIEMENS BUZ 101L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv^di rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ101L Vbs 50V *> 29 A RaS on
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O-220
BUZ101L
C67078-S1355-A2
702 TRANSISTOR smd
smd 58a transistor 6-pin
transistor 702 F smd
TRANSISTOR SMD 702 N
702 L TRANSISTOR smd
702 Z TRANSISTOR smd
702 N smd transistor
transistor 702 smd
SMD transistor code 702
702 transistor smd code
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BUZ102
Abstract: smd transistor py
Text: SIEMENS BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dvfdt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs BUZ102 50 V b 42 A flbston Package Ordering Code
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OCR Scan
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O-220
BUZ102
C67078-S1351-A2
BUZ102
smd transistor py
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transistor SMD t70
Abstract: BUZ104
Text: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ104 Vfcs Io flbSfon Package Ordering Code 50 V
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OCR Scan
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O-220
BUZ104
C67078-S1353-A2
a23SbÃ
GPT05155
fl235b05
00fi4Sc
transistor SMD t70
BUZ104
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SmD TRANSISTOR 42T
Abstract: smd 42t
Text: SIEMENS BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs >D ffDS on Package Ordering Code BUZ100
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OCR Scan
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O-220
BUZ100
C67078-S1348-A2
6235bDS
SmD TRANSISTOR 42T
smd 42t
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