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    PMXB56EN Search Results

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    PMXB56EN Price and Stock

    Nexperia PMXB56ENZ

    MOSFET N-CH 30V 3.2A DFN1010D-3
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    DigiKey PMXB56ENZ Cut Tape 333 1
    • 1 $0.48
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    • 1000 $0.12567
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    PMXB56ENZ Digi-Reel 333 1
    • 1 $0.48
    • 10 $0.297
    • 100 $0.48
    • 1000 $0.12567
    • 10000 $0.11284
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    PMXB56ENZ Reel 5,000
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    • 10000 $0.09033
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    Avnet Americas PMXB56ENZ Reel 8 Weeks 10,000
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    Mouser Electronics PMXB56ENZ 5,863
    • 1 $0.35
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    Verical PMXB56ENZ 5,000 5,000
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    PMXB56ENZ 5,000 5,000
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    PMXB56ENZ 1,423 1,423
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    Arrow Electronics PMXB56ENZ 5,000 8 Weeks 5,000
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    PMXB56ENZ 1,423 1,423
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    TTI PMXB56ENZ Reel 10,000
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    Avnet Asia PMXB56ENZ 8 Weeks 10,000
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    Avnet Silica PMXB56ENZ 10 Weeks 5,000
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    Chip1Stop PMXB56ENZ Cut Tape 3,969
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    • 10 $0.386
    • 100 $0.149
    • 1000 $0.11
    • 10000 $0.103
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    EBV Elektronik PMXB56ENZ 10 Weeks 5,000
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    NXP Semiconductors PMXB56EN

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    Bristol Electronics PMXB56EN 9,159
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    PMXB56EN Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PMXB56EN NXP Semiconductors 30 V, N-channel Trench MOSFET Original PDF
    PMXB56EN NXP Semiconductors NXP MOSFETs and bipolar transistors in DFN1010; Small and Powerful Original PDF
    PMXB56EN147 NXP Semiconductors SMALL SIGNAL FET Original PDF
    PMXB56ENX NXP Semiconductors PMXB56EN - PMXB56EN - 30 V, N-channel Trench MOSFET Original PDF
    PMXB56ENZ NXP Semiconductors PMXB56EN - PMXB56EN - 30 V, N-channel Trench MOSFET Original PDF

    PMXB56EN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMXB56EN DFN1010D-3 OT1215) PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 25 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMXB56EN DFN1010D-3 OT1215) PDF

    PQMD12

    Abstract: No abstract text available
    Text: Small & Powerful NXP MOSFETs and bipolar transistors in DFN1010 First 3 A transistors in a 1.1 mm² leadless plastic package This new product series, housed in tiny leadless packages and ideal for use in tightfootprint power management and load switches, includes small yet powerful high-Ptot


    Original     		DFN1010 OT963 DFN1010B-6 DFN0806 PQMD12 PDF

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143 PDF