transistor marking N1
Abstract: MA4L728
Text: Schottky Barrier Diodes SBD MA4L728 Silicon epitaxial planar type Unit: mm For high speed switching For wave detection 0.020±0.010 2 0.80±0.05 3 • Features 1 4 0.60±0.05 1.00±0.05 0.50 0.20±0.03 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1
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MA4L728
SKH00100AED
transistor marking N1
MA4L728
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PDF
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA4L728 Silicon epitaxial planar type Unit: mm For high speed switching For wave detection 0.020±0.010 2 0.80±0.05 3 • Features M Di ain sc te on na tin nc ue e/ d 0.60±0.05 1.00±0.05 0.20±0.03 4 ■ Absolute Maximum Ratings Ta = 25°C
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MA4L728
1008-type
SKH00100AED
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PDF
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA4L728 Silicon epitaxial planar type Unit: mm For high speed switching For wave detection 0.020±0.010 2 M Di ain sc te on na tin nc ue e/ d 0.80±0.05 3 • Features 1 4 Parameter Symbol VR Peak reverse voltage VRM Forward current (DC)
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MA4L728
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PDF
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MA4L728
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA4L728 Silicon epitaxial planar type Unit: mm M Di ain sc te on na tin nc ue e/ d For high speed switching For wave detection 0.020±0.010 2 1 4 1 0.20±0.03 4 • Absolute Maximum Ratings Ta = 25°C Parameter 0.60±0.05 1.00±0.05
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Original
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MA4L728
MA4L728
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PDF
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