Untitled
Abstract: No abstract text available
Text: MA4L728 Silicon epitaxial planar type Unit: mm For high speed switching For wave detection 0.020±0.010 2 3 0.80±0.05 • Features 1 4 0.60±0.05 1.00±0.05 0.50 0.20±0.03 3 0.30±0.03 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1 4 0.05±0.03 • Low forward voltage V F and good wave detection efficiency η
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MA4L728
1008-type
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MA4L728
Abstract: MARKING 103 transistor marking N1
Text: Schottky Barrier Diodes SBD MA4L728 Silicon epitaxial planar type Unit: mm For high speed switching For wave detection 0.020±0.010 2 0.80±0.05 3 • Features 1 4 0.60±0.05 1.00±0.05 0.50 0.20±0.03 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1
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MA4L728
MA4L728
MARKING 103
transistor marking N1
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transistor marking N1
Abstract: MA4L728
Text: Schottky Barrier Diodes SBD MA4L728 Silicon epitaxial planar type Unit: mm For high speed switching For wave detection 0.020±0.010 2 0.80±0.05 3 • Features 1 4 0.60±0.05 1.00±0.05 0.50 0.20±0.03 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1
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MA4L728
SKH00100AED
transistor marking N1
MA4L728
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA4L728 Silicon epitaxial planar type Unit: mm For high speed switching For wave detection 0.020±0.010 2 0.80±0.05 3 • Features M Di ain sc te on na tin nc ue e/ d 0.60±0.05 1.00±0.05 0.20±0.03 4 ■ Absolute Maximum Ratings Ta = 25°C
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MA4L728
1008-type
SKH00100AED
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA4L728 Silicon epitaxial planar type Unit: mm For high speed switching For wave detection 0.020±0.010 2 M Di ain sc te on na tin nc ue e/ d 0.80±0.05 3 • Features 1 4 Parameter Symbol VR Peak reverse voltage VRM Forward current (DC)
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MA4L728
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MA4L728
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA4L728 Silicon epitaxial planar type Unit: mm M Di ain sc te on na tin nc ue e/ d For high speed switching For wave detection 0.020±0.010 2 1 4 1 0.20±0.03 4 • Absolute Maximum Ratings Ta = 25°C Parameter 0.60±0.05 1.00±0.05
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MA4L728
MA4L728
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA4L728 Silicon epitaxial planar type Unit: mm For high speed switching For wave detection 0.020±0.010 2 0.80±0.05 3 • Features 1 4 0.60±0.05 1.00±0.05 0.50 0.20±0.03 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1
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MA4L728
1008-type
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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MA7D52
Abstract: No abstract text available
Text: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)
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MA2C700
MA2C700A
MA2C719
MA2C723
MA2D749
MA2D749A
MA2D750
MA2D755
MA2D760
MA2H735
MA7D52
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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MA716
Abstract: MA7D50 ma741 MA10799
Text: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119 MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742
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MA10700)
MA10701)
MA10702)
MA10703)
MA10704)
MA10705)
MA10798)
MA10799)
MA4S713)
MA6S718)
MA716
MA7D50
ma741
MA10799
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Untitled
Abstract: No abstract text available
Text: Characteristics Quick Reference Guide • SBD for Power Electrical characteristics Ta = 25°C VRRM IF(AV) (V) (A) 30 30 Package Single-chip type VF max. (V) 20 5 0.47 MA3D798 10 3 0.47 MA3D799 TO-220D-B1 (2-pin) 1 40 45 5 50 3 1 TO-220D-A1 (3-pin) 0.55 3
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MA2D760
MA3D761
MA2D755
MA3D756
MA3D760
MA3U760
MA3D752
MA3D752A
MA3D755
MA3U755
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Untitled
Abstract: No abstract text available
Text: New 1008-type Molded Lead-less 4-pin Transistor/Diode Series • Overview Unit:mm 0.020 ± 0.010 3 2 0.80 ± 0.05 4 1 0.60 ± 0.05 1.00 ± 0.05 ■ Features 1 ● Assembly process that does not use lead frame. ● Lead Pb -free design and significant reduction in discarded plastics for
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1008-type
1/10th
2SB1462L
2SD2216L
UNRL110
UNRL210
MA4L111
MA4L728
MA4L784
E00081BE
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1008 transistor
Abstract: No abstract text available
Text: Panasonic 1008-type Molded Lead-less 4-pin Transistor/Diode Series • Overview Unit:mm These series are transistors and Diodes that are housed in ultra small 4-pin |Q .0 2 0 t0 .0 1 P molded lead-less package of 1.0 mmx0.8 mmx0.6 mm. The PCB mounting area is l/10th of that of conventional Panasonic Mini 3pin packages and high-density integration is possible. And they are designed
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1008-type
l/10th
UNRL110
UNRL210
MA4L111
MA4L728
MA4L784
D00081BE
1008 transistor
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