SJD00316AED Search Results

SJD00316AED Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SA2140 Abstract: 2SA214 Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C	Original	PDF	2002/95/EC) 2SA2140 O-220D-A1 2SA2140 2SA214
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C	Original	PDF	2002/95/EC) 2SA2140
SJD00316AED Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Parameter	Original	PDF	2002/95/EC) 2SA2140 SJD00316AED
2SA2140 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 15.0±0.5 • Satisfactory linearity of forward current transfer ratio hFE	Original	PDF	2002/95/EC) 2SA2140 2SA2140
2SA2140 Abstract: 2SA21 Text: Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO	Original	PDF	2SA2140 2SA2140 2SA21