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Vishay Siliconix SIR826ADP-T1-GE3 MOSFET N-CH 80V 60A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIR826ADP-T1-GE3	Cut Tape	1,453		1	1 $3.26 10 $2.12 100 $3.26 1000 $1.10636 10000 $1.10636	Buy Now
	SIR826ADP-T1-GE3	Digi-Reel	1,453		1	1 $3.26 10 $2.12 100 $3.26 1000 $1.10636 10000 $1.10636	Buy Now
	SIR826ADP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $1.025	Buy Now
Vishay Intertechnologies SIR826ADP-T1-GE3 N-CHANNEL 80-V (D-S) MOSFET - Tape and Reel (Alt: SIR826ADP-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIR826ADP-T1-GE3	Reel		27 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $1.00861	Buy Now
Mouser Electronics	SIR826ADP-T1-GE3					1 $2.64 10 $1.93 100 $1.46 1000 $1.09 10000 $1.04	Get Quote
Newark	SIR826ADP-T1-GE3	Cut Tape			1	1 $2.45 10 $2.44 100 $2.44 1000 $2.44 10000 $2.44	Buy Now
	SIR826ADP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $1.05	Buy Now
Bristol Electronics	SIR826ADP-T1-GE3		699			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	SIR826ADP-T1-GE3	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $1.35	Buy Now

Avnet Asia	SIR826ADP-T1-GE3			29 Weeks	1	1 - 10 - 100 - 1000 - 10000 $1.20603	Buy Now
EBV Elektronik	SIR826ADP-T1-GE3			27 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Huntington SIR826ADP-T1-GE3 MOSFET N-CH 80V 60A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	SIR826ADP-T1-GE3		12,000			1 - 10 - 100 $1.3393 1000 $1.0882 10000 $1.0882	Buy Now

SIR826ADP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIR826ADP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 60A 8SOIC		Original	PDF

SIR826ADP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: New Product SiR826ADP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a 0.0055 at VGS = 10 V 60 80 0.0059 at VGS = 7.5 V 60 0.0087 at VGS = 4.5 V 60 Qg (Typ.) 25 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm	Original	PDF	SiR826ADP SiR826ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiR826ADP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) Max. ID (A) a 0.0055 at VGS = 10 V 60 0.0059 at VGS = 7.5 V 60 0.0087 at VGS = 4.5 V 60 Qg (Typ.) D 5 D 6 • 100 % Rg and UIS tested • Material categorization:	Original	PDF	SiR826ADP SiR826ADelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: Specification Comparison www.vishay.com Vishay Siliconix SiR826ADP vs. SiR826DP Description: N-Channel, 80 V D-S MOSFET Package: PowerPAK SO-8 Pin Out: Identical Part Number Replacements: SiR826ADP-T1-GE3 replaces SiR826DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)	Original	PDF	SiR826ADP SiR826DP SiR826ADP-T1-GE3 SiR826DP-T1-GE3 22-Aug-13
Untitled Abstract: No abstract text available Text: SiR826ADP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) Max. ID (A) a 0.0055 at VGS = 10 V 60 0.0059 at VGS = 7.5 V 60 0.0087 at VGS = 4.5 V 60 Qg (Typ.) D 5 D 6 • 100 % Rg and UIS tested • Material categorization:	Original	PDF	SiR826ADP SiR826ADelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product SiR826ADP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a 0.0055 at VGS = 10 V 60 80 0.0059 at VGS = 7.5 V 60 0.0087 at VGS = 4.5 V 60 Qg (Typ.) 25 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm	Original	PDF	SiR826ADP SiR826ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SPICE Device Model SiR826ADP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiR826ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
IDTP9036A Abstract: OM350 Text: 12V Wireless Power Transmitter IC for TX-A6 Product Datasheet IDTP9036A Features Description 5W Solution for Wireless Power Consortium WPC -Compliant Power Transmitter Design TX-A6 Conforms to WPC Specification Version 1.1 Specifications Reduced EMI To Meet Requirements of WPC	Original	PDF	IDTP9036A IDTP9036A OM350
so8 footprint Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs KEY BENEFITS • New next-generation technology provides very low on-resistance and ultra-low figure of merit	Original	PDF	SC-70 SC-75 Si7252DP VMN-PT0261-1209 so8 footprint SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
Untitled Abstract: No abstract text available Text: Exclusive Technology Feature ISSUE: October 2014 How2 Turn On A MOSFET by Sanjay Havanur, Vishay Siliconix, Santa Clara, Calif. On a portal dedicated to power electronics professionals the topic of turning on a MOSFET might sound trivial, like asking how to boil water on a cooking show. After all, it shouldn't be a major issue. Unlike bipolar devices,	Original	PDF
Untitled Abstract: No abstract text available Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit	Original	PDF	SC-75 SiB456DK Si7252DP SiS990DN Si4590DY 1212-8S VMN-PT0261-1402
N-Channel MOSFETs Abstract: No abstract text available Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in	Original	PDF	SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs